Product Datasheet Search Results:
- 3N163
- American Microsemiconductor, Inc.
- 50 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72
- 3N163
- Calogic, Llc
- 50 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72
- X3N163
- Calogic, Llc
- 50 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72
- 3N163
- Intersil Corporation
- Data Book 1981
- 3N163
- Linear Integrated Systems, Inc.
- 50 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72
- 3N163-4
- Linear Integrated Systems
- P-CHANNEL ENHANCEMENT MODE
- 3N163-SOT-143
- Linear Integrated Systems, Inc.
- 3N163-SOT-143
- LS3N163
- Linear Integrated Systems, Inc.
- 50 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72
- X3N163
- Sipex Corporation
- P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch
- 3N163
- Solitron Devices, Inc.
- 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72
- 3N163
- Vishay Presicion Group
- 50 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-206AF
Product Details Search Results:
Americanmicrosemi.com/3N163
{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Package Body Material":"METAL","Mfr Package Description":"TO-72, 4 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"250 ohm","Number of Termina...
1293 Bytes - 05:35:12, 01 April 2025
Calogic.net/3N163
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3750 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"250 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...
1445 Bytes - 05:35:12, 01 April 2025
Calogic.net/X3N163
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.3750 W","Package Shape":"UNSPECIFIED","Status":"DISCONTINUED","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"300 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","Transistor Appli...
1452 Bytes - 05:35:12, 01 April 2025
Linearsystems.com/3N163
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3750 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"250 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...
1496 Bytes - 05:35:12, 01 April 2025
Linearsystems.com/3N163-SOT-143
808 Bytes - 05:35:12, 01 April 2025
Linearsystems.com/LS3N163
{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED PACAKGE-4","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"0.0500 A","Feedback Cap-Max (Crss)":"0.7000 pF","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND...
1381 Bytes - 05:35:12, 01 April 2025
Solitrondevices.com/3N163
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"2.5 ohm","Feedback Cap-Max (Crss)":"0.7000 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"...
1257 Bytes - 05:35:12, 01 April 2025
Vishay.com/3N163
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Series":"-","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 10\u00b5A","PCN Assembly/Origin":"SIL-062-2014-Rev-0 30/May/2014","Package / Case":"TO-206AF, TO-72-4 Metal Can","Supplier Device Package":"TO-72","Datasheets":"3N163,3N164","Rds On (Max) @ Id, Vgs":"250 Ohm @ 100\u00b5A, 20V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"375mW","Standard Package":"200","Drain to...
1464 Bytes - 05:35:12, 01 April 2025
Vishay.com/3N163-2
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 10\u00b5A","Series":"-","Package / Case":"TO-206AF, TO-72-4 Metal Can","Supplier Device Package":"TO-72","Datasheets":"3N163,3N164","Rds On (Max) @ Id, Vgs":"250 Ohm @ 100\u00b5A, 20V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"375mW","Standard Package":"20","Drain to Source Voltage (Vdss)":"40V","Current - Continuous Drai...
1419 Bytes - 05:35:12, 01 April 2025
Vishay.com/3N163-D
804 Bytes - 05:35:12, 01 April 2025
Vishay.com/3N163-D-E3
810 Bytes - 05:35:12, 01 April 2025
Vishay.com/3N163-E3
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Series":"-","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 10\u00b5A","PCN Assembly/Origin":"SIL-062-2014-Rev-0 30/May/2014","Package / Case":"TO-206AF, TO-72-4 Metal Can","Supplier Device Package":"TO-72","Datasheets":"3N163,3N164","Rds On (Max) @ Id, Vgs":"250 Ohm @ 100\u00b5A, 20V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"375mW","Standard Package":"200","Drain to...
1480 Bytes - 05:35:12, 01 April 2025
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