3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR)DSS Min (V) VGS(th) (V) rDS(on) Max () ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 -40 -2 to -5 250 -5 0.7 18 3N164 -30 -2 to -5 300 -3 0.7 18 Features Benefits Applications Ultra-High Input Impedance Amplifier Ultra-Low Input Leakage: 0.02 pA Typ. High Input Impedance Isolation High Gate Breakdown Voltage: 125 V Minimize Handling ESD Problems Smoke Detectors High Off Isolation without Power Electrometers Normally Off Analog Switching Digital Switching Description The 3N163/164 are lateral p-channel MOSFETs designed for analog switch and preamplifier applications where high speed and low parasitic capacitances are required. The hermetic TO-206AF package is compatible with military processing per military standards (see Military information). TO-206AF (TO-72) D S 1 4 2 3 Case Substrate G Top View Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) -40 Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 mA Lead Temperature (1/16" from case for 10 seconds) . . . . . . . . . 300C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200C Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 150C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375 mW Notes: a. Derate 3 mW/C above 25C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70228. Siliconix P-37404--Rev. D, 04-Jul-94 1 3N163/3N164 3N163 3N164 Drain-Source Breakdown Voltage V(BR)DSS ID = -10 mA, VDS = 0 V -70 -40 -30 Source-Drain Breakdown Voltage V(BR)SDS IS = -10 mA, VGD = VBD = 0 V -70 -40 -30 VGS(th) ID = -10 mA, VGS = VDS -2.5 -2 -5 -2 -5 VGS ID = -0.5 mA, VDS = -15 V -3.5 -3 -6.5 -2.5 -6.5 VGS = -40 V, VDS = 0 V <-1 Static Gate-Threshold Voltage Gate-Source Voltage Gate Body Leakage Gate-Body IGSS TA = 125Cd VGS = -30 V, VDS = 0 V TA = Zero Gate Voltage Drain Current Zero-Gate IDSS Zero Gate Voltage Source Current Zero-Gate ISDS On-State Drain Currentc ID(on) Drain Source On-Resistance On Resistance Drain-Source rDS(on) DS( ) 125Cd VDS = -15 V, VGS = 0 V TA = 125Cd VGD = VBD = 0 V, VSD = -20 V TA = 125Cd V -1 <-1 -10 pA -1 -8 -200 -400 -400 -800 -20 nA -10 -25 VDS = -15 V, VGS = -10 V -10 VGS = -20 V, ID = -100 mA 180 TA = 125Cd -10 pA nA -5 -30 -3 250 -30 300 270 mA W Dynamic Forward Transconductance c gfs Common-Source Output Conductancec gos Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDSS = -15 V, ID = -10 mA f = 1 kHz VDS = -15 15 V, V ID = -10 10 mA A f = 1 MHz 2.7 2 4 1 4 mS mS 150 250 250 2.4 3.5 3.5 2.5 3 3 0.5 0.7 0.7 5 12 12 13 24 24 25 50 50 pF Switchinge Turn On Time Turn-On Turn-Off Time td(on) tr td(off) VDD = -15 15 V, RL = 1500 W ID ^ -10 mA, VGEN = -12 V RG = 50 W Notes: a. TA = 25C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. d. This parameter not registered with JEDEC. e. Switching time is essentially independent of operating temperature. 2 ns MRA Siliconix P-37404--Rev. D, 04-Jul-94 3N163/3N164 Typical Characteristics Output Characteristics -50 VBS = 0 V -16 V -30 -14 V -12 V -20 -10 V -8 V -10 -40 I D - Drain Current (mA) I D - Drain Current (mA) VDS = VGS VBS = 0 V -18 V -40 Transfer Characteristics -50 VGS = -20 V -30 -20 -10 -6 V 0 0 0 -10 -20 -30 -40 -50 0 -20 Low-Level Output Characteristics 10 k -400 -200 g fs - Forward Transconductance ( mA) -600 I D - Drain Current (mA) -16 VGS - Gate-Source Voltage (V) -800 -5 V -4 V 0 200 400 VBS = 0 V 600 800 1000 0.4 0.2 0 -0.2 VDS = -15 V VBS = 0 V f= 1 kHz TA = 25C 1k 125C 100 10 -0.01 -0.4 -0.1 -1 VDS - Drain-Source Voltage (V) ID - Drain Current (mA) Drain-Source On-Resistance vs. Gate-Source Voltage Low-Level Drain-Source On-Voltage vs. Gate-Source Voltage 2.5 ID = 100 mA VBS = 0 V V DS - Drain-Source Voltage (V) rDS(on) - Drain-Source On-Resistance ( W -12 Common-Source Forward Transconductance vs. Drain Current VGS = -10 V -9 V -8 V -7 V -6 V 10 k TA = 125C 1k -8 VDS - Drain-Source Voltage (V) -1000 100 k -4 TA = 25C 100 -10 2.0 ID = 0.1 mA 1.5 10 mA 1.0 0.5 1 mA 0 0 -10 VGS - Gate-Source Voltage (V) Siliconix P-37404--Rev. D, 04-Jul-94 -20 0 -10 -20 VGS - Gate-Source Voltage (V) 3 3N163/3N164 Typical Characteristics (Cont'd) Capacitance vs. Gate-Source Voltage Drain-Source Leakage Current vs. Temperature 100 nA 3.0 Ciss C (pF) Coss I S(off) , I D(off) - Leakage 2.4 VDS = -15 V VBS = 0 V f= 1 MHz 1.8 1.2 Crss 0.6 IS(off) ID(off) 1 nA 100 pA 10 pA 0 0 -4 -8 -12 -16 -20 10 30 50 70 90 110 130 VGS - Gate-Source Voltage (V) TA - Temperature (C) Common-Source Output Conductance vs. Drain Voltage Common-Source Output Conductance vs. Drain Current 10 k 150 1000 VBS = 0 V f= 1 kHz g os - Output Conductance ( m S) g os - Output Conductance ( m S) 10 nA 1k ID(on) = -10 mA 100 -1 mA VDS = -15 V VBS = 0 V f= 1 kHz 100 10 10 1 0 -5 -10 -15 -20 -25 -0.1 -30 -1.0 VDS - Drain-Source Voltage (V) -10 -100 ID - Drain Current (mA) Switching Time Test Circuit To Scope -VDD 0V 510 W 51 W 50% VIN VOUT To Scope Input pulse: td, tr < 1 ns Pulse width: 100 ns Rep rate: 1 MHz VIN 4 RL Sampling Scope tr < 360 ps RIN = 1 MW CIN = 2 pF BW = 500 MHz -12 V td(on) td(off) 0V 10% VOUT 90% -VDD tr tf Siliconix P-37404--Rev. D, 04-Jul-94 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1