3N163/3N164
Siliconix
P-37404—Rev. D, 04-Jul-94 1
P-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part
Number V(BR)DSS Min
(V) VGS(th)
(V) rDS(on) Max
()ID(on) Min
(mA) Crss Max
(pF) tON Typ
(ns)
3N163 –40 –2 to –5 250 –5 0.7 18
3N164 –30 –2 to –5 300 –3 0.7 18
Features Benefits Applications
Ultra-Low Input Leakage: 0.02 pA Typ.
High Gate Breakdown Voltage: 125 V
Normally Off
High Input Impedance Isolation
Minimize Handling ESD Problems
High Off Isolation without Power
Ultra-High Input Impedance Amplifier
Smoke Detectors
Electrometers
Analog Switching
Digital Switching
Description
The 3N163/164 are lateral p-channel MOSFETs designed
for analog switch and preamplifier applications where
high speed and low parasitic capacitances are required.
The hermetic TO-206AF package is compatible with
military processing per military standards (see Military
information).
Case
Substrate
Top View
D
G
TO-206AF
(TO-72)
1
23
4
S
Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted)
–40
Continuous Drain Current –50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 seconds) 300C. . . . . . . . .
Storage Temperature –65 to 200C. . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150C. . . . . . . . . . . . . . . . . .
Power Dissipationa375 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. Derate 3 mW/C above 25C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70228.
3N163/3N164
2 Siliconix
P-37404—Rev. D, 04-Jul-94
3N163 3N164
Static
Drain-Source Breakdown Voltage V(BR)DSS ID = –10 mA, VDS = 0 V –70 –40 –30
Source-Drain Breakdown Voltage V(BR)SDS IS = –10 mA, VGD = VBD = 0 V –70 –40 –30
V
Gate-Threshold Voltage VGS(th) ID = –10 mA, VGS = VDS –2.5 –2 –5 –2 –5
V
Gate-Source Voltage VGS ID = –0.5 mA, VDS = –15 V –3.5 –3 –6.5 –2.5 –6.5
VGS = –40 V, VDS = 0 V <–1 –10
Gate Body Leakage
IGSS
TA = 125Cd–1
Gate
-
Body
Leakage
I
GSS VGS = –30 V, VDS = 0 V <–1 –10 pA
TA = 125Cd–1
Zero Gate Voltage Drain Current
IDSS
VDS = –15 V, VGS = 0 V –8 –200 –400
Zero
-
Gate
Voltage
Drain
Current
I
DSS TA = 125Cd–20 nA
Zero Gate Voltage Source Current
ISDS
VGD = VBD = 0 V, VSD = –20 V –10 –400 –800 pA
Zero
-
Gate
Voltage
Source
Current
I
SDS TA = 125Cd–25 nA
On-State Drain CurrentcID(on) VDS = –15 V, VGS = –10 V –10 –5 –30 –3 –30 mA
Drain Source On Resistance
rDS( )
VGS = –20 V, ID = –100 mA 180 250 300
W
Drain
-
Source
On
-
Resistance
r
DS(on) TA = 125Cd270
W
Dynamic
Forward Transconductancecgfs VDS = –15 V, ID = –10 mA 2.7 2 4 1 4 mS
Common-Source Output Conductancecgos
S
f = 1 kHz 150 250 250 mS
Input Capacitance Ciss
V 15 V I 10 A
2.4 3.5 3.5
Output Capacitance Coss VDS = –15 V, ID = –10 mA
f = 1 MHz 2.5 3 3 pF
Reverse Transfer Capacitance Crss 0.5 0.7 0.7
Switchinge
Turn On Time
td(on)
VDD
=–
15 V, RL
=
1500 W
5 12 12
Turn
-
On
Time
tr
VDD
=
15
V
,
RL
=
1500
W
ID ^ –10 mA, VGEN = –12 V
RG=50W
13 24 24 ns
Turn-Off Time td(off)
R
G =
50
W
25 50 50
Notes:
a. TA = 25C unless otherwise noted. MRA
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Pulse test: PW v300 ms duty cycle v3%.
d. This parameter not registered with JEDEC.
e. Switching time is essentially independent of operating temperature.
3N163/3N164
Siliconix
P-37404—Rev. D, 04-Jul-94 3
Typical Characteristics
VGS = –10 V
Output Characteristics
Drain-Source On-Resistance
vs. Gate-Source Voltage Low-Level Drain-Source On-Voltage
vs. Gate-Source Voltage
Common-Source Forward Transconductance
vs. Drain Current
rDS(on) – Drain-Source On-Resistance (
– Drain-Source Voltage (V)
VDS
– Drain Current (mA)
ID
VGS – Gate-Source Voltage (V)
ID – Drain Current (mA)
VDS – Drain-Source Voltage (V)
VGS – Gate-Source Voltage (V)
–50
0 –30 –40–20–10 –50
–40
–30
–20
–10
0
VBS = 0 V VGS = –20 V
–18 V
–16 V
–14 V
–12 V
–10 V
–8 V
–6 V
Transfer Characteristics
– Drain Current (mA)
ID
VGS – Gate-Source Voltage (V)
0 –12 –16 –20–8–4
–50
–40
–30
–20
–10
0
Low-Level Output Characteristics
– Drain Current (
IDA)m
VDS – Drain-Source Voltage (V)
–1000
0 –0.20.20.4 –0.4
–800
–600
–400
–200
0
200
400
600
800
1000
–5 V
–4 V
10 k
–0.1 –1–0.01 –10
1 k
100
10
125C
TA = 25C
100 k
0 –20
10 k
1 k
100 –10
TA = 125C
TA = 25C
2.5
2.0
1.5
1.0
0.5
00 –20–10
ID = 100 mA
VBS = 0 V
10 mA
1 mA
gfs – Forward Transconductance (
VDS = –15 V
VBS = 0 V
f= 1 kHz
VDS = VGS
VBS = 0 V
VBS = 0 V
–9 V
–8 V
–7 V
–6 V
W
A)m
ID = 0.1 mA
3N163/3N164
4 Siliconix
P-37404—Rev. D, 04-Jul-94
Typical Characteristics (Cont’d)
Capacitance vs. Gate-Source Voltage Drain-Source Leakage Current
vs. Temperature
Common-Source Output Conductance
vs. Drain Voltage Common-Source Output Conductance
vs. Drain Current
C (pF)
ID – Drain Current (mA)VDS – Drain-Source Voltage (V)
TA – Temperature (C)VGS – Gate-Source Voltage (V)
3.0
0 –12 –16–8–4 –20
0
0.6
1.2
1.8
2.4
100 nA
10 70 905030 110
10 nA
1 nA
100 pA
10 pA 130 150
10 k
0 –20 –25–15–10 –30
1 k
100
10 –5
1000
–0.1 –100–10–1.0
100
10
1
ID(on) = –10 mA
Ciss
Coss
Crss
IS(off)
ID(off)
–1 mA
– Leakage I, I
S(off) D(off)
S)gos – Output Conductance ( m
VDS = –15 V
VBS = 0 V
f= 1 kHz
VDS = –15 V
VBS = 0 V
f= 1 MHz
VBS = 0 V
f= 1 kHz
S)gos – Output Conductance ( m
Switching Time Test Circuit
510 WRL
51 W
VIN
To Scope –VDD
VOUT
To Scope
–VDD
50%
10%
90%
td(on) td(off)
trtf
0 V
–12 V
0 V
VIN
VOUT
Input pulse: td, tr < 1 ns
Pulse width: 100 ns
Rep rate: 1 MHz
Sampling Scope
tr < 360 ps
RIN = 1 MW
CIN = 2 pF
BW = 500 MHz
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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