Linear Integrated Systems
Linear Integrated Systems
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
P-CHANNEL ENHANCEMENT MODE
MOSFET
3N163, 3N164
FEATURES
VERY HIGH INPUT IMPEDANCE
HIGH GATE BREAKDOWN
ULTRA LOW LEAKAGE
FAST SWITCHING
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
@ 25°C (unless otherwise noted)
Drain-Source or Drain-Gate Voltage
3N163 -40V
3N164 -30V
Transient G-S Voltage (NOTE 1) ±125V
Drain Current 50mA
Storage Temperature -65°C to +200°C
Power Dissipation 375mW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS 3N163 3N164 UNITS CONDITIONS
MIN MAX MIN MAX
IGSSF Gate Forward Current -10 -10 pA VGS=-40V VDS=0 (3N163)
TA=+125°C -25 -25 VGS=-30V VDS=0 (3N164)
BVDSS Drain-Source Breakdown Voltage -40 -30 ID=-10µAV
GS=0
BVSDS Source-Drain Breakdown Voltage -40 -30 V IS=-10µAV
GD=0 VBD=0
VGS(th) Threshold Voltage -2.0 -5.0 -2.0 -5.0 VDS=VGS ID=-10µA
VGS(th) Threshold Voltage -2.0 -5.0 -2.0 -5.0 VDS=-15V ID=-10µA
VGS Gate Source Voltage -3.0 -6.5 -3.0 -6.5 VDS=-15V ID=-0.5mA
IDSS Zero Gate Voltage Drain Current 200 400 pA VDS=-15V VGS=0
ISDS Source Drain Current 400 800 VDS=15V VGS=VDB=0
rDS(on) Drain-Source on Resistance 250 300 ohms VGS=-20V ID=-100µA
ID(on) On Drain Current -5.0 -30 -3.0 -30 mA VDS=-15V VGS=-10V
gfs Forward Transconductance 2000 4000 1000 4000 µsV
DS=-15V ID=-10mA f=1kHz
gos Output Admittance 250 250
Ciss Input Capacitance-Output Shorted 2.5 2.5 pF VDS=-15V ID=-10mA f=1MHz
Crss Reverse Transfer Capacitance 0.7 0.7 (NOTE 2)
Coss Output Capacitance Input Shorted 3.0 3.0
1
23
4
Case
G
DS
DS
G Case
18 X 30 MILS TO-72
Bottom View
Linear Integrated Systems
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
SWITCHING CHARACTERISTICS TA=25°C and VBS=0 unless otherwise noted)
SYMBOL CHARACTERISTICS 3N163 3N164 UNITS CONDITIONS
MIN MAX MIN MAX
ton Turn-On Delay Time 12 12 ns VDD=-15V
trRise Time 24 24 ID(on)=-10mA (NOTE 2)
toff Turn-Off Time 50 50 RG=RL=1.4KΩ
90%
Switching Times Test Circuit
NOTES:
1. Devices must not be tested at ±125V more than once, nor for longer than 300ms.
2. For design reference only, not 100% tested.
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress
ratings only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Ω
≤
≥≤
V
DD
1
2OUT
V
R
R
50
Switching Times Test Circuit
t
10%
10%
10%
10%
t
on
r
off
t
INPUT PULSE
Rise Time 2ns
Pulse Width 200ns
SAMPLING SCOPE
T 0.2ns
C 2pF
R 10M
r
IN
IN
TYPICAL SWITCHING WAVEFORM
≥
≤
