3N163 Transistors
P-Channel Enhancement MOSFET
Military/High-RelN
V(BR)DSS (V)40
V(BR)GSS (V)40
I(D) Max. (A)50m
I(DM) Max. (A) Pulsed I(D)
@Temp (øC)
IDM Max (@25øC Amb)
@Pulse Width (s) (Condition)
Absolute Max. Power Diss. (W)375m
Minimum Operating Temp (øC)
Maximum Operating Temp (øC)200þ
Thermal Resistance Junc-Case
Thermal Resistance Junc-Amb.
V(GS)th Max. (V)
V(GS)th (V) (Min)
@(VDS) (V) (Test Condition)
@I(D) (A) (Test Condition)
I(DSS) Max. (A)
@V(DS) (V) (Test Condition)
@Temp (øC) (Test Condition)
I(GSS) Max. (A)10p
@V(GS) (V) (Test Condition)
r(DS)on Max. (Ohms)250
@V(GS) (V) (Test Condition)
@I(D) (A) (Test Condition)
g(fs) Min. (S) Trans. conduct.2.0m
g(fs) Max; (S) Trans. conduct;4.0m
@V(DS) (V) (Test Condition)15
@I(D) (A) (Test Condition)10m
C(iss) Max. (F)2.5p
@V(DS) (V) (Test Condition)
@V(GS) (V) (Test Condition)
@Freq. (Hz) (Test Condition)
td(on) Max (s) On time delay
t(r) Max. (s) Rise time24n
t(d)off Max. (s) Off time
t(f) Max. (s) Fall time.
Package StyleTO-72
Mounting StyleT
Pinout Equivalence Code4-50
Ckt. (Pinout) NumberTR00400050
