LS3N163 P-CHANNEL MOSFET The LS3N163 is an enhancement mode P-Channel Mosfet The LS3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications. FEATURES DIRECT REPLACEMENT FOR INTERSIL LS3N163 ABSOLUTE MAXIMUM RATINGS1 @ 25C (unless otherwise noted) Maximum Temperatures Storage Temperature (See Packaging Information). Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation LS3N163 Features: MAXIMUM CURRENT Very high Input Impedance Drain Current Low Capacitance MAXIMUM VOLTAGES High Gain Drain to Gate High Gate Breakdown Voltage Drain to Source Low Threshold Voltage Peak Gate to Source2 LS3N163 ELECTRICAL CHARACTERISTICS @ 25C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS IGSSF Gate Forward Current 10 pA TA= +125C 25 BVDSS Drain to Source Breakdown Voltage 40 BVSDS SourceDrain Breakdown Voltage 40 V VGS(th) Gate to Source Threshold Voltage 2.0 5.0 2.0 5.0 VGS Gate Source Voltage 3.0 6.5 IDSS Drain Leakage Current "Off" 200 pA ISDS Source Drain Current 400 rDS(on) Drain to Source "On" Resistance 250 ID(on) Drain Current "On" 5.0 30 mA gfs Forward Transconductance 2000 4000 S gos 65C to +200C 55C to +150C 375mW 50mA 40V 40V 125V CONDITIONS VGS = 40V, VDS = 0V ID = 10A, VGS = 0V IS = 10A, VGD = 0V, VBD = 0V VDS = VGS , ID = 10A VDS = 15V, ID = 10A VDS = 15V, ID = 0.5mA VDS = 15V, VGS = 0V VDS = 15V, VGS = VDB = 0V VGS = 20V, ID = 100A VDS = 15V, VGS = 10V VDS = 15V, ID = 10mA , f = 1kHz Click To Buy Output Admittance 250 Ciss Input Capacitance-Output shorted 2.5 Crss Reverse Transfer Capacitance 0.7 Coss Output CapacitanceInput shorted 3.0 SWITCHING CHARACTERISTICS TA = 25C and VBS = 0 unless otherwise noted SYMBOL CHARACTERISTIC MAX UNITS CONDITIONS td(on) Turn On Delay Time 12 VDD = 15V ns ID(on) = 10mA tr Turn On Rise Time 24 3 RG = RL = 1.4K toff Turn Off Time 50 pF 3 VDS = 15V, ID = 10mA , f = 1MHz TIMING WAVEFORMS SWITCHING TEST CIRCUIT Note 1 Absolute maximum ratings are limiting values above which LS3N163 serviceability may be impaired. Note 2 - Device must not be tested at 125V more than once or longer than 300ms. Note 3 - For design reference only, not 100% tested Micross Components Europe Available Packages: TO-72 (Bottom View) LS3N163 in TO-72 LS3N163 in bare die. Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution Please contact Micross for full package and die dimensions Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx