3N163 - Linear Integrated Systems, Inc.

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Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx

FEATURES

DIRECTREPLACEMENTFORINTERSIL3N163

ABSOLUTEMAXIMUMRATINGS



@25°C(unlessotherwisenoted)

MaximumTemperatures

StorageTemperature‐65°Cto+200°C

OperatingJunctionTemperature‐55°Cto+150°C

MaximumPowerDissipation

ContinuousPowerDissipation 375mW

MAXIMUMCURRENT

DrainCurrent50mA

MAXIMUMVOLTAGES

DraintoGate‐40V

DraintoSource‐40V

PeakGatetoSource

±125V

3N163ELECTRICALCHARACTERISTICS@25°C(unlessotherwisenoted)

SYMBOLCHARACTERISTICMINTYP.MAXUNITSCONDITIONS

IGSSFGateForwardCurrent ‐10 ‐‐ ‐‐ pAVGS=‐40V,VDS=0V

TA=+125°C ‐‐ ‐‐ ‐25

BVDSSDraintoSourceBreakdownVoltage‐40 ‐‐ ‐‐ 



V

ID=‐10µA,VGS=0V

BVSDSSource‐DrainBreakdownVoltage‐40 ‐‐ ‐‐ IS=‐10µA,VGD=0V,VBD=0V

VGS(th)GatetoSourceThresholdVoltage‐2.0 ‐‐ ‐5.0VDS=VGS,ID=‐10µA

‐2.0 ‐‐ ‐5.0VDS=‐15V,ID=‐10µA

VGSGateSourceVoltage‐3.0 ‐‐ ‐6.5VDS=‐15V,ID=‐0.5mA

IDSSDrainLeakageCurrent“Off” ‐‐ ‐‐ 200pAVDS=‐15V,VGS=0V

ISDSSourceDrainCurrent ‐‐ ‐‐ 400VDS=15V,VGS=VDB=0V

rDS

(

)

DraintoSource“On”Resistance ‐‐ ‐‐ 250Ω VGS=‐20V,ID=‐100µA

(

)

DrainCurrent“On”‐5.0 ‐‐ ‐30mAVDS=‐15V,VGS=‐10V

gfsForwardTransconductance2000 ‐‐ 4000µSVDS=‐15V,ID=‐10mA,f=1kHz

gosOutputAdmittance ‐‐ ‐‐ 250

CissInputCapacitance–Outputshorted ‐‐ ‐‐ 2.5

pF



VDS=‐15V,ID=‐10mA,f=1MHz3

CrssReverseTransferCapacitance ‐‐ ‐‐ 0.7

CossOutputCapacitanceInputShorted ‐‐ ‐‐ 3.0

SWITCHINGCHARACTERISTICS‐TA=25°CandVBS=0unlessotherwisenotedTIMINGWAVEFORMS

SYMBOLCHARACTERISTICMAXUNITSCONDITIONS

(

)

TurnOnDelayTime12

ns

VDD=‐15V

ID(on)=‐10mA

RG=RL=1.4KΩ3

trTurnOnRiseTime24

toffTurnOffTime50



SWITCHINGTESTCIRCUIT

The 3N163 is an enhancement mode P-Channel Mosfet

3N163

P-CHANNEL MOSFET

Note1‐Absolutemaximumratingsarelimitingvaluesabovewhich3N163serviceabilitymaybeimpaired.

Note2–Devicemustnotbetestedat±125Vmorethanonceorlongerthan300ms.

Note3–Fordesignreferenceonly,not100%tested

The 3N163 is an enhancement mode P-Channel Mosfet

designed for use as a General Purpose amplifier or

switch

The hermetically sealed TO-72 package is well suited

for high reliability and harsh environment applications.

(See Packaging Information).

Micross Components Europe

Tel: +44 1603 788967

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

TO-72 (Bottom View)

Available Packages:

3N163 in TO-72

3N163 in bare die.

Please contact Micross for full

package and die dimensions

3N163 Features:

 Very high Input Impedance

 Low Capacitance

 High Gain

 High Gate Breakdown Voltage

 Low Threshold Voltage