P-Channel Enhancement Mode
MOSFET General Purpose
Amplifi er Switch
3N163 / 3N164
FEATURES
••Very High I nput Impedan ce
••High G ate Br eakd own
••Fast Switching
••Low Capacitance
ABSOLUTE M AXI MUM RATINGS (Not e 1)
(TA = 25oC unless oth erw ise specified)
Drain- Sour ce or Dr ain-G ate Volta ge
3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 V
3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30 V
Stat ic Gate-Sour ce Voltage
3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40V
3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
T ran sient Gate- Sour ce Voltage (Not e 2). . . . . . . . . . . . ±125V
Drain Cur re nt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50m A
Stor age Temp e ratu re. . . . . . . . . . . . . . . . . . . -65 oC to +200 oC
Oper at ing Tem pe ratu re . . . . . . . . . . . . . . . . . -55oC to +150 oC
Lead Tempe ratu re (So ld er ing, 10se c). . . . . . . . . . . . . +300 oC
Power Dissipat ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . 3.0mW/oC
NOTE: Str esses above those listed under "Abso lute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the sp ecifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affec t device reliability.
ORDERING INFORMATION
Part Package Temperat ure Range
3N163- 64 Herm etic TO -72 -55oC to +150oC
X3N163- 64 Sort ed Chips in Carr iers -55oC to +150oC
CORPORATION
PIN CONFIGUR ATI O N
TO-72
GD
CS
1503
ELECTRICA L CHARACTERI STIC S (TA = 2 5oC unle ss otherwise sp ecif ie d)
SYMBOL PARAMETER 3N163 3N164 UNITS TEST CONDITIONS
MIN MAX MIN MAX
IGSS Gate-Body Le akag e Cu rren t -10 -10 pA VGS = -40V, VDS = 0 (3N163 )
VGS = -30V, VDS = 0 (3N164 )
-25 -25 TA = +125oC
BVDSS Drain-Source Breakdown Voltage -40 -30
V
ID = -10µA, VGS = 0
BVSDS Source-Drain Breakdown Voltage -40 -3 0 IS = -10µA, VGD = 0, VBD = 0
VGS(th) Th resho ld Voltag e -2.0 -5.0 -2.0 -5.0 VDS = VGS, ID = -10µA
VGS(th) Th resho ld Voltag e -2.0 -5.0 -2.0 -5.0 VDS = -15V, ID = -10µA
VGS Gate Source Voltage -2.5 -6.5 -2.5 -6.5 VDS = -15V, ID = -0.5mA
IDSS Zero Gate Voltag e Drain Curren t 200 400 pA VDS = -15V, VGS = 0
ISDS Source Drain Current 400 800 VSD = 15V, VGS = VDB = 0
rDS(on) Drain-Source on Resistance 250 300 ohms VGS = -20V, ID = -100µA
ID(on) On Drain Current -5.0 -30.0 -3.0 -30.0 mA VDS = +15V, VGS = -10V
SWITCHING TIMES TEST CI RCUIT
0160
V
OUT
R
1
R
2
V
DD
50Ω
0170
10% 10%
90%
10%
10%
on
t
r
t
SAMPLING SCOPEINPUT PULSE
PULSE WIDTH
RISE TIME
IN
R > 10MΩ
> 200ns
< 2ns
r
t < 0.2ns
IN
C < 2pF
off
t
3N163 / 3N164
CORPORATION
ELECTRICA L CHARACTERI STIC S (Continued) (TA = 2 5oC and VBS = 0 unless other wise sp ecif ied)
SYMBOL PARAMETER 3N163 3N164 UNITS TEST CONDITIONS
MIN MAX MIN MAX
gfs Forward Transconductance 2000 4000 1000 4000 µSVDS = -15V, ID = -10mA, f = 1kHz
gos Output Admittance 250 250
Ciss Input Capacitance - Output Shorted 2.5 2.5
pF VDS = -15V, ID = -10mA, f = 1MHz
(Note 1)
Crss Reverse Transf er Capacitan ce 0.7 0.7
Coss Output Capacitance - Input Shorted 3.0 3.0
NOTE 1: For design reference only, not 100% tested.
SWIT CHING CHARACTERI STICS (TA = 25 oC and VBS = 0 unless otherwise specified)
SYMBOL PARAMETER 3N163 3N164 UNITS TEST CONDITIONS
MIN MAX MIN MAX
ton Turn-On Delay Time 12 12
ns VDD = -15V
ID(on) = -10mA (Note 1)
RG = RL = 1.4kΩ
trRise T ime 24 24
toff T urn-Off Delay Time 50 50
