[INTERSIL 3N163, 3N164 P-Channel Enhancement Mode MOS FET FEATURES @ Very High Input Impedance PIN CHIP High Gate Breakdown CONFIGURATION TOPOGRAPHY @ Fast Switching 10.72 1503-2 Low Capacitance Fee Sas cy + MAXIMUM RATINGS (@ 25C ambient unless noted} or 6 BR x Sos 3N163 0 3N164 0140 0180 Voss Static Gate to Source Voltage 240V +30V Vgs"!! Transmit Gate to Scurce Voltage 125V 9 +125V Voss _ Drain to Source Voltage -40V -30V Vsos Source to Drain Voltage -40V -30V Voco Drain to Gate Voltage -40V -30V mage x 9028 sv No rd x ad lp Drain Current -50mA -50mA c s onan NOTE: susstaare . Po Power Dissipation 375 mW G D Derating Factor 3.0 mw ORDERING INFORMATION T. Operating Junction Temperature -55 to +150C J > T sto Storage Temperature ~65 to +200C" TO-72 WAFER DICE Th ead Temoeranwre 1416" from ~265 C 3N163 3N163/W 3N163/D ase for 10 sec max 3N164 3N164/W 3N164/D (Mpevices must not be tested at 725V more than ance or for longer than 300 ms. NOTE: See handling precautions on 3N170 data sheet. ELECTRICAL CHARACTERISTICS (@ 25C and Vag = 0 unless noted) 3N163 3N164 UNITS TEST CONDITIONS MIN MAX MIN MAX less Gate Reverse Leakage Current 10 192 pA Ov - 40V, @ Veg = 30V lei Gate Forward Current 100 10 | pa | Dvgg = -40V.O Vigg -30V tou Gate Forward Current @ 125C 250) -25@) pA Dy gg - -40V,2 Vgg *-30V BVoss Drain-Source Breakdown Voltage -40 -30 Vv Ip = -10HA, Vgg 7 0 BYcps Source Drain Breakdown Voltage -40 -30 v Ig = -10 UA, Ven = 0, Vpp 9 Vosimi Threshold Voltage -2.0 -5.0 -2.0 -6.0 Vv Vos * Vos. lo 7 -10 nA Vosum Threshold Voltage -2.0 -5.0 -2.0 -6.0 v Vos * ~15V, Ip = -10 UA Vos Gate Source Voltage -3.0 -6.5 -3.0 -65 v Vos * ~18V, Ip = 0.5 mA loss Zero Gate Voltage Drain Current 200 400 pA Vos = -15V. Vos - 0 Isps | Source Drain Current 400 800 pA Vsp - 19V. Vos Vos 0 Faston) Drain-Source on Resistance 250 300 ohms. Vag 7 -20V, Ip - - 100 RA loton? On Drain Current 5.0 -30.0 3.0 -30.0 mA Vog = ~18, Vgg = -10V Yes Forward Transconductance @ 1 kHz 2000 4000 1000 4000 umhos Vos = -19V, Ip = -10mA Yos Output Admittance @ 1 kHz 250 250 pmhos Vag 7 -189V, Ip = -10mMA Cw Input Capacitance - Output Shor ted 25 25 pF Vos = -15V, Ip = -10mA, f= 1 MHz Com, Reverse Transfer Capacitance 07 0.7 pF Vos 7 -18V. lp = -10 mA, f= 1 MHz Coss Output Capacitance Input Shorted 3.0 3.0 pF Vos = -15V, Ip = 10 mA, f= 1 MHz oO SWITCHING CHARACTERISTICS (@ 25C and Vgg = 0) fon Turn-On Delay Time 12 12 ns Voo = ~15V ' t Rise Time 24 24 ns Ipiom = 10MA jh tow Turn-Off Time 50 50 ns Roe RL: 14 ks? SWITCHING TIME CIRCUIT v SWITCHING WAVEFORM Sut! ~ ' 1-26