Product Datasheet Search Results:
- SI8900EDB
- Vishay Presicion Group
- 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- SI8900EDB-E3
- Vishay Presicion Group
- 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- SI8900EDB-T1
- Vishay / Siliconix
- Trans MOSFET N-CH 20V 5.4A 10-Pin Micro Foot T/R
- SI8900EDBT1
- Vishay Presicion Group
- 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- SI8900EDB-T2
- Vishay Presicion Group
- 5400 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- SI8900EDB-T2-E1
- Vishay [siliconix]
- MOSFET BIDIR N-CH 20V 2X5 10-MFP - SI8900EDB-T2-E1
Product Details Search Results:
Vishay.com/SI8900EDB
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"MICRO FOOT, CSP-10","Terminal Form":"BALL","Operating Mode":"ENHANCEMENT","Package Style":"GRID ARRAY","Transistor Application":"SWITCHING","Number of Elements":"2","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Confi...
1371 Bytes - 17:28:06, 04 December 2024
Vishay.com/SI8900EDB-E3
{"Terminal Finish":"MATTE TIN","Terminal Form":"BALL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR","Drain-source On Resistance-Max":"0.0400 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Ap...
1459 Bytes - 17:28:06, 04 December 2024
Vishay.com/SI8900EDB-T1
{"Category":"MOSFET","Maximum Drain Source Voltage":"20 V","Typical Rise Time":"4500 ns","Typical Turn-Off Delay Time":"55000 ns","Description":"Value","Maximum Continuous Drain Current":"5.4 A","Package":"10Micro Foot","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b112 V","Typical Turn-On Delay Time":"3000 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"24@4.5V mOhm","Manufacturer":"Vishay / Siliconix","Typical Fall Time":"15000 ns"}...
1364 Bytes - 17:28:06, 04 December 2024
Vishay.com/SI8900EDBT1
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2 X 5 MM, MICRO FOOT, CSP-10","Terminal Form":"BALL","Operating Mode":"ENHANCEMENT","Package Style":"GRID ARRAY","Transistor Application":"SWITCHING","Number of Elements":"2","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"COMMON DRAIN, ...
1356 Bytes - 17:28:06, 04 December 2024
Vishay.com/SI8900EDB-T2
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"UNSPECIFIED","Mfr Package Description":"LEAD FREE, MICRO FOOT, 10 PIN","Terminal Form":"BALL","Operating Mode":"ENHANCEMENT","Package Style":"GRID ARRAY","Drain Current-Max (ID)":"5.4 A","Transistor Element Material":"SILICON","Number of Elements":"2","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Config...
1437 Bytes - 17:28:06, 04 December 2024
Vishay.com/SI8900EDB-T2-E1
905 Bytes - 17:28:06, 04 December 2024