Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V (D-S) MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 IS1S2 (A) 0.024 @ VGS = 4.5 V 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View MICRO FOOT TrenchFETr Power MOSFET Ultra-Low rSS(on) ESD Protected: 4000 V New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area APPLICATIONS D Battery Protection Circuit - 1-2 Cell Li+/LiP Battery Pack for Portable Devices Backside View S1 S2 7 6 S2 Pin 1 Identifier S2 9 4 S2 G1 G1 S1 10 3 S1 S1 1 2 S1 4 kW Device Marking: 8900E xxx G2 8 5 8900E = P/N Code xxx = Date/Lot Traceability Code 4 kW G2 N-Channel S2 Ordering Information: Si8900EDB-T2 Si8900EDB-T2--E1 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Source1--Source2 Voltage Gate-Source Voltage Continuous Source1--Source2 Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Source1--Source2 Current TA = 85_C Operating Junction and Storage Temperature Range Package Reflow Conditionsc Steady State 20 VGS "12 IS1S2 PD Unit V 5.4 7 5.1 3.9 ISM TA = 25_C Maximum Power Dissipationa 5 secs VS1S2 A 50 1.8 1 0.9 0.5 TJ, Tstg W -55 to 150 VPR 215 IR/Convection 220 _C C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Footb Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 55 70 95 120 12 15 Unit _C/W C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. b. The Foot is defined as the top surface of the package. c. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering. Document Number: 71830 S-50066--Rev. F, 17-Jan-05 www.vishay.com 1 Si8900EDB Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VSS = VGS, ID = 1.1 mA 0.45 Typ Max Unit 1.0 V VSS = 0 V, VGS = "4.5 V "4 mA VSS = 0 V, VGS = "12 V "10 mA Static Gate Threshold Voltage Gate Body Leakage Gate-Body IGSS Zero Gate Voltage Source Current IS1S2 On-State Source Currenta IS(on) Source1 Source2 On-State Source1--Source2 On State Resistancea Forward 1 5 VSS = 5 V, VGS = 4.5 V rS1S2(on) Transconductancea VSS = 20 V, VGS = 0 V VSS = 20 V, VGS = 0 V, TJ = 85_C gfs mA 5 A VGS = 4.5 V, ISS = 1 A 0.020 0.024 VGS = 3.7 V, ISS = 1 A 0.022 0.026 VGS = 2.5 V, ISS = 1 A 0.026 0.034 VGS = 1.8 V, ISS = 1 A 0.032 0.040 VSS = 10 V, ISS = 1 A 31 W S Dynamicb Turn-On Delay Time td(on) Rise Time 3 tr Turn-Off Delay Time VSS = 10 V, RL = 10 W ISS ^ 1 A, VGEN = 4.5 V, Rg = 6 W td(off) Fall Time tf 5 4.5 7 55 85 15 25 ms Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 20 Gate Current vs. Gate-Source Voltage 10,000 1,000 I GSS - Gate Current (mA) I GSS - Gate Current (mA) IGSS @ 25_C (mA) 16 12 8 4 TJ = 150_C 10 1 TJ = 25_C 0.1 0 0.01 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) www.vishay.com 2 100 15 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) Document Number: 71830 S-50066--Rev. F, 17-Jan-05 Si8900EDB Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 10 10 VGS = 5 thru 1.5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 6 4 1V 6 4 TC = 125_C 2 2 0 0 0.0 25_C -55_C 0 1 2 3 4 0.2 VDS - Drain-to-Source Voltage (V) 1.0 1.2 On-Resistance vs. Junction Temperature 0.04 1.4 VGS = 1.8 V 0.03 rDS(on) - On-Resiistance (Normalized) r DS(on) - On-Resistance ( W ) 0.8 1.6 VGS = 2.5 V VGS = 3.7 V 0.02 VGS = 4.5 V 0.01 VGS = 4.5 V IS1S2 = 1 A 1.2 1.0 0.8 0.00 0 2 4 6 8 0.6 -50 10 -25 On-Resistance vs. Gate-to-Source Voltage 0.10 0 25 50 75 100 125 150 125 150 TJ - Junction Temperature (_C) ID - Drain Current (A) Threshold Voltage 0.2 0.1 0.08 IS1S2 = 1.1 mA IS1S2 = 5 A V GS(th) Variance (V) r DS(on) - On-Resistance ( W ) 0.6 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 0.4 0.06 IS1S2 = 1 A 0.04 0.02 -0.0 -0.1 -0.2 -0.3 0.00 0 1 2 3 VGS - Gate-to-Source Voltage (V) Document Number: 71830 S-50066--Rev. F, 17-Jan-05 4 5 -0.4 -50 -25 0 25 50 75 100 TJ - Temperature (_C) www.vishay.com 3 Si8900EDB Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power, Junction-to-Ambient 30 25 Power (W) 20 15 10 5 0 0.01 0.1 1 10 100 1000 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 95_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 www.vishay.com 4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 71830 S-50066--Rev. F, 17-Jan-05 Si8900EDB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 10-BUMP (2 X 5, 0.8-mm PITCH) 10 O 0.30 X 0.31 Note 3 Solder Mask O X 0.40 A e A2 Silicon A1 Bump Note 2 e Recommended Land b Diamerter S2 8900E xxx E Mark on Backside of Die e S1 e D NOTES (Unless Otherwise Specified): 1. Laser mark on the silicon die back, coated with a thin metal. 2. Bumps are Eutectic solder 63/57 Sn/Pb. 3. Non-solder mask defined copper landing pad. MILLIMETERS* INCHES Dim Min Max Min Max A 0.600 0.650 0.0236 0.0256 A1 0.260 0.290 0.102 0.0114 A2 0.340 0.360 0.0134 0.0142 b 0.370 0.410 0.0146 0.0161 D 4.050 4.060 0.1594 0.1598 E 1.980 2.000 0.0780 0.0787 e 0.750 0.850 0.0295 0.0335 S1 0.430 0.450 0.0169 0.0177 S2 0.580 0.600 0.0228 0.0236 * Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71830. Document Number: 71830 S-50066--Rev. F, 17-Jan-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1