Si8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V (D-S) MOSFET FEATURES D D D D PRODUCT SUMMARY VSS (V) rSS(on) () 20 0.024 @ VGS = 4.5 V 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 APPLICATIONS 0.40 @ VGS = 1.8 V 5.5 D Battery Protection Circuit - 1-2 Cell Li+/LiP Battery Pack for Portable Devices Bump Side View S2 7 6 ISS (A) TrenchFETr Power MOSFET Ultra-Low rSS(on) ESD Protected: 4000 V New MICRO FOOTt Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area MICRO FOOTt Backside View S1 S2 Pin 1 Identifier S2 8 5 9 4 S1 10 3 4 k 8900E xxx G2 G1 S2 G1 Device Marking: 4 k 8900E = P/N Code xxx = Date/Lot Traceability Code G2 S1 N-Channel S1 1 2 S2 S1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VSS 20 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 85_C Pulsed Drain Current ISS Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V 7 5.4 5.1 3.9 ISM TA = 25_C Unit A 10 1.8 1 0.9 0.5 TJ, Tstg W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Footb Steady State Steady State RthJA RthJF Typical Maximum 55 70 95 120 12 15 Unit _C/W C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. b. The Foot is defined as the top surface of the package. Document Number: 71830 S-20217--Rev. A, 01-Apr-02 www.vishay.com 1 Si8900EDB New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VSS = VGS, ID = 250 A 0.45 Typ Max Unit 1.0 V VSS = 0 V, VGS = "4.5 V "4 A VSS = 0 V, VGS = "12 V "10 mA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current ISS On-State Drain Currenta ISS(on) Drain-Source On-State Resistancea Forward 1 5 VSS = 5 V, VGS = 4.5 V rSS(on) Transconductancea VSS = 16 V, VGS = 0 V VSS = 16 V, VGS = 0 V, TJ = 85_C gfs A 5 A VGS = 4.5 V, ISS = 1 A 0.020 0.024 VGS = 3.7 V, ISS = 1 A 0.022 0.026 VGS = 2.5 V, ISS = 1 A 0.026 0.034 VGS = 1.8 V, ISS = 1 A 0.032 0.40 VSS = 10 V, ISS = 1 A 31 S Dynamicb Turn-On Delay Time td(on) Rise Time 3 tr Turn-Off Delay Time VSS = 10 V, RL = 10 ISS ^ 1 A, VGEN = 4.5 V, RG = 6 td(off) Fall Time tf 5 4.5 7 55 85 15 25 s Notes a. Pulse test; pulse width v 300 s, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 20 10,000 1,000 I GSS - Gate Current (A) I GSS - Gate Current (mA) IGSS @ 25_C (mA) 16 12 8 4 TJ = 150_C 10 1 TJ = 25_C 0.1 0 0.01 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) www.vishay.com 2 100 15 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) Document Number: 71830 S-20217--Rev. A, 01-Apr-02 Si8900EDB New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 10 10 VGS = 5 thru 1.5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 6 4 1V 6 4 TC = 125_C 2 2 0 0 0.0 25_C -55_C 0 1 2 3 4 0.2 VDS - Drain-to-Source Voltage (V) 0.04 1.4 VGS = 1.8 V VGS = 2.5 V VGS = 3.7 V VGS = 4.5 V 0.01 0.00 0 2 4 6 8 1.0 1.2 1.2 1.0 0.8 0.6 -50 10 VGS = 4.5 V ID = 1 A -25 0 25 50 75 100 125 150 125 150 TJ - Junction Temperature (_C) ID - Drain Current (A) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 0.2 0.10 ID = 250 A 0.1 0.08 ID = 5 A V GS(th) Variance (V) r DS(on) - On-Resistance ( ) 0.8 On-Resistance vs. Junction Temperature 1.6 r DS(on) - On-Resistance () (Normalized) r DS(on) - On-Resistance ( ) On-Resistance vs. Drain Current 0.02 0.6 VGS - Gate-to-Source Voltage (V) 0.05 0.03 0.4 0.06 ID = 1 A 0.04 0.02 -0.0 -0.1 -0.2 -0.3 0.00 0 1 2 3 VGS - Gate-to-Source Voltage (V) Document Number: 71830 S-20217--Rev. A, 01-Apr-02 4 5 -0.4 -50 -25 0 25 50 75 100 TJ - Temperature (_C) www.vishay.com 3 Si8900EDB New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power, Junction-to-Ambient 30 25 Power (W) 20 15 10 5 0 0.01 0.1 1 10 100 1000 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 95_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 www.vishay.com 4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 71830 S-20217--Rev. A, 01-Apr-02 Si8900EDB New Product Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 10$BUMP (2 X 5, 0.8$mm PITCH) 10 O 0.30 X 0.31 Note 3 Solder Mask O X 0.40 A e A2 Silicon A1 Bump Note 2 e Recommended Land b Diamerter S2 8900E xxx E Mark on Backside of Die e S1 e D NOTES (Unless Otherwise Specified): 1. Laser mark on the silicon die back, coated with a thin metal. 2. Bumps are Eutectic solder 63/57 Sn/Pb. 3. Non-solder mask defined copper landing pad. MILLIMETERS* INCHES Dim Min Max Min Max A 0.600 0.650 0.0236 0.0256 A1 0.260 0.290 0.102 0.0114 A2 0.340 0.360 0.0134 0.0142 b 0.370 0.410 0.0146 0.0161 D 4.050 4.060 0.1594 0.1598 E 1.980 2.000 0.0780 0.0787 e 0.750 0.850 0.0295 0.0335 S1 0.430 0.450 0.0169 0.0177 S2 0.580 0.600 0.0228 0.0236 * Use millimeters as the primary measurement. Document Number: 71830 S-20217--Rev. A, 01-Apr-02 www.vishay.com 5 Si8900EDB New Product Vishay Siliconix CARRIER TAPE MICRO FOOT: 10$BUMP ( 2 X 2, 0.8$mm PITCH) 4.00"0.10 1.50)0.10 2.00"0.05 1.75"0.10 4.00"0.10 5.50"0.05 12.00 )0.30 *0.10 0.279"0.02 5_ MAX 5_ MAX 4.22"0.05 2.21"0.05 0.81"0.05 A0 K0 B0 DEVICE ON TAPE ORIENTATION 8900E xxx 8900E xxx 8900E xxx 8900E xxx 8900E xxx NOTES: 1. Material: Black Conductive Polycarbonate. 2. Cover tape is conductive pressure sensitive adhesive tape. Resistivity X1.00E+5 /sq.; minimum removal force X 31 oz. min. 3. All Dimensions are in millimeters unless otherwise specified. VER A0 B0 K0 REEL DIA. LENGTH -1 2.21 4.22 0.81 178 14 m approx. QUANTITY PER REEL T1 www.vishay.com 6 3000 Document Number: 71830 S-20217--Rev. A, 01-Apr-02