Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V (D-S) MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V MICRO FOOT TrenchFETr Power MOSFET Ultra-Low rSS(on) ESD Protected: 4000 V New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area APPLICATIONS D Battery Protection Circuit - 1-2 Cell Li+/LiP Battery Pack for Portable Devices Backside View S1 S2 Pin 1 Identifier 8 5 G2 9 S1 S1 4 10 3 1 2 G1 S2 G1 4 kW Device Marking: 8900E xxx S2 4 kW 8900E = P/N Code xxx = Date/Lot Traceability Code G2 S1 N-Channel S1 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Source1--Source2 Voltage Gate-Source Voltage Continuous Source1--Source2 Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Source1--Source2 Current TA = 85_C Operating Junction and Storage Temperature Range Package Reflow Conditionsc Steady State 20 VGS "12 IS1S2 PD Unit V 5.4 7 5.1 ISM TA = 25_C Maximum Power Dissipationa 5 secs VS1S2 3.9 A 50 1.8 1 0.9 0.5 TJ, Tstg W - 55 to 150 VPR 215 IR/Convection 220 _C C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Footb Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 55 70 95 120 12 15 Unit _C/W C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. b. The Foot is defined as the top surface of the package. c. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering. Document Number: 71830 S-31916--Rev. E, 15-Sep-03 www.vishay.com 1 Si8900EDB Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VSS = VGS, ID = 1.1 mA 0.45 Typ Max Unit 1.0 V VSS = 0 V, VGS = "4.5 V "4 mA VSS = 0 V, VGS = "12 V "10 mA Static Gate Threshold Voltage Gate Body Leakage Gate-Body IGSS Zero Gate Voltage Source Current IS1S2 On-State Source Currenta IS(on) Source1 Source2 On-State Source1--Source2 On State Resistancea Forward 1 5 VSS = 5 V, VGS = 4.5 V rS1S2(on) Transconductancea VSS = 16 V, VGS = 0 V VSS = 16 V, VGS = 0 V, TJ = 85_C gfs mA 5 A VGS = 4.5 V, ISS = 1 A 0.020 0.024 VGS = 3.7 V, ISS = 1 A 0.022 0.026 VGS = 2.5 V, ISS = 1 A 0.026 0.034 VGS = 1.8 V, ISS = 1 A 0.032 0.040 VSS = 10 V, ISS = 1 A 31 W S Dynamicb Turn-On Delay Time td(on) Rise Time 3 tr Turn-Off Delay Time VSS = 10 V, RL = 10 W ISS ^ 1 A, VGEN = 4.5 V, RG = 6 W td(off) Fall Time tf 5 4.5 7 55 85 15 25 ms Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 20 Gate Current vs. Gate-Source Voltage 10,000 1,000 I GSS - Gate Current (mA) I GSS - Gate Current (mA) IGSS @ 25_C (mA) 16 12 8 4 TJ = 150_C 10 1 TJ = 25_C 0.1 0 0.01 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) www.vishay.com 2 100 15 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) Document Number: 71830 S-31916--Rev. E, 15-Sep-03 Si8900EDB Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 Transfer Characteristics 10 VGS = 5 thru 1.5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 6 4 1V 6 4 TC = 125_C 2 2 0 0 0.0 25_C - 55_C 0 1 2 3 4 0.2 VDS - Drain-to-Source Voltage (V) r DS(on) - On-Resistance (W) (Normalized) r DS(on) - On-Resistance ( W ) 1.6 0.04 VGS = 1.8 V 0.03 VGS = 2.5 V VGS = 3.7 V 0.02 VGS = 4.5 V 0.01 0.00 0 2 4 6 8 1.4 1.0 1.2 VGS = 4.5 V IS1S2 = 1 A 1.2 1.0 0.8 0.6 - 50 10 - 25 0 25 50 75 100 125 150 125 150 TJ - Junction Temperature (_C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 0.2 0.1 0.08 IS1S2 = 1.1 mA IS1S2 = 5 A V GS(th) Variance (V) r DS(on) - On-Resistance ( W ) 0.8 On-Resistance vs. Junction Temperature ID - Drain Current (A) 0.10 0.6 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 0.4 0.06 IS1S2 = 1 A 0.04 0.02 - 0.0 - 0.1 - 0.2 - 0.3 0.00 0 1 2 3 VGS - Gate-to-Source Voltage (V) Document Number: 71830 S-31916--Rev. E, 15-Sep-03 4 5 - 0.4 - 50 - 25 0 25 50 75 100 TJ - Temperature (_C) www.vishay.com 3 Si8900EDB Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power, Junction-to-Ambient 30 25 Power (W) 20 15 10 5 0 0.01 0.1 1 10 100 1000 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 95_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 Square Wave Pulse Duration (sec) 10 -1 1 Document Number: 71830 S-31916--Rev. E, 15-Sep-03 Si8900EDB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 10-BUMP (2 X 5, 0.8-mm PITCH) 10 O 0.30 X 0.31 Note 3 Solder Mask O X 0.40 A e A2 Silicon A1 Bump Note 2 e Recommended Land b Diamerter S2 8900E xxx E Mark on Backside of Die e S1 e D NOTES (Unless Otherwise Specified): 1. Laser mark on the silicon die back, coated with a thin metal. 2. Bumps are Eutectic solder 63/57 Sn/Pb. 3. Non-solder mask defined copper landing pad. MILLIMETERS* INCHES Dim Min Max Min Max A 0.600 0.650 0.0236 0.0256 A1 0.260 0.290 0.102 0.0114 A2 0.340 0.360 0.0134 0.0142 b 0.370 0.410 0.0146 0.0161 D 4.050 4.060 0.1594 0.1598 E 1.980 2.000 0.0780 0.0787 e 0.750 0.850 0.0295 0.0335 S1 0.430 0.450 0.0169 0.0177 S2 0.580 0.600 0.0228 0.0236 * Use millimeters as the primary measurement. Document Number: 71830 S-31916--Rev. E, 15-Sep-03 www.vishay.com 5