Product Datasheet Search Results:
7 Pages, 89 KB, Original- IRFD120
- Fairchild Semiconductor
- N-Channel Power MOSFET
2 Pages, 127 KB, Original- IRFD120
- Motorola / Freescale Semiconductor
- (IRFD123) TMOS Field Effect Transistor / Dual In-Line Package
2 Pages, 120 KB, Scan- IRFD120
- General Electric
- Power Transistor Data Book 1985
5 Pages, 173 KB, Scan- IRFD120
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 170 KB, Scan- IRFD120R
- Harris Semiconductor
- Power MOSFET Data Book 1990
6 Pages, 53 KB, Original- IRFD120
- Intersil Corporation
- 1.3A, 100V, 0.300 ?, N-Channel Power MOSFET
1 Pages, 50 KB, Original- IRFD120
- International Rectifier
- HEXFET Power MOSFETs
8 Pages, 1795 KB, Original- IRFD120PBF
- International Rectifier
- HEXFET Power MOSFET
1 Pages, 41 KB, Original- IRFD120R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
Product Details Search Results:
Siliconix_vishay/IRFD120PBF
804 Bytes - 23:23:36, 23 September 2024
Various/IRFD120R
{"C(iss) Max. (F)":"450p","Absolute Max. Power Diss. (W)":"1.0","V(BR)DSS (V)":"100","g(fs) Max, (S) Trans. conduct,":"1.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"100n","r(DS)on Max. (Ohms)":"300m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"5.2","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"0.9","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"600m","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-250v...
1269 Bytes - 23:23:36, 23 September 2024
Vishay.com/IRFD120
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"4-DIP (0.300\", 7.62mm)","Current - Continuous Drain (Id) @ 25\u00b0C":"1.3A (Ta)","Gate Charge (Qg) @ Vgs":"16nC @ 10V","Product Photos":"4-DIP","Rds On (Max) @ Id, Vgs":"270 mOhm @ 780mA, 10V","Datasheets":"IRFD120","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"2,500","Drain to Source Voltage (Vdss)":"100V","PCN Obsolescence\/ EOL":"SIL-018-2015-Rev-0 20\/May\/2...
1746 Bytes - 23:23:36, 23 September 2024
Vishay.com/IRFD120PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IR(F,L)D Series Side 1 IR(F,L)D Series Side 2","Package \/ Case":"4-DIP (0.300\", 7.62mm)","Current - Continuous Drain (Id) @ 25\u00b0C":"1.3A (Ta)","Gate Charge (Qg) @ Vgs":"16nC @ 10V","Product Photos":"4-DIP","Rds On (Max) @ Id, Vgs":"270 mOhm @ 780mA, 10V","Datasheets":"IRFD120","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"2,500","Drain to Source Voltage (Vd...
1757 Bytes - 23:23:36, 23 September 2024
Vishay_pcs/IRFD120PBF
{"Category":"Power MOSFET","Dimensions":"6.29 x 5 x 3.37 mm","Maximum Continuous Drain Current":"1.3 A","Width":"5 mm","Maximum Drain Source Voltage":"100 V","Package Type":"HVMDIP","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+175 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 16 nC @ 10 V","Operating Temperature Range":"-55 to +175 \u00b0C","Typical Turn On Delay Time":"6.8 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"360 pF @ 25 V","Length":"6...
1929 Bytes - 23:23:36, 23 September 2024
