Standard Power MOSFETs IRFD120, IRFD121, IRFD122, IRFD123 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 1.1 Aand 1.3 A, 60 V - 100 V osion = 0.3 Q and 0.4Q Features: = SOA is power-cissipation limited m Nanosecond switching speeds ws Linear transfer characteristics @ High input impedance a Majority carrier device The !RFD120, IRFD121, IRFD122, and IRFD123 are n-channel enhancemept-mode silicon-gate power field- effect transistors designed for applications such as switch- ing regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching tran- N-CHANNEL ENHANCEMENT MODE File Number 2315 $ 92CS-33741 TERMINAL DIAGRAM TERMINAL DESIGNATION {l Te : oe . . TOP VIEW sistors requiring high speed and low gate-drive power. These types can be operated directiy from integrated circuits. 4-PIN DIP The IRFD-types are supplied in the 4-pin DIP package. ABSOLUTE MAXIMUM RATINGS P, IRFD120 IRFD121 (RFD122 IRFD123 Units Vos Drain - Source Voltage 100 60 100 60 Vv Voca Drain - Gate Voltage (Res = 20 kQ) 100 60 100 60 Vv Ib @ Ta = 25C Continuous Drain Current 1.3 1.3 11 41 A lon Pulsed Drain Current 5.2 5.2 44 44 A Vos Gate - Source Voltage +20 v Po @ Ta = 26C Max. Power Dissipation 1.0 (See Fig. 13) Ww. Linear Derating Factor 0.008 (See Fig. 13) Wwrc tus inductive Current, Clamped (See Fig. 14 and 15) L = 100 wH A 5.2 l 5.2 44 | 44 Tt Operating Junction and 4 Tag Storage Temperature Range 55 to 150 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 3-214Standard Power MOSFETs. IRFD120, IRFD121, IRFD122, IRFD123 Electrical Characteristics @T = 25C (Unless Otherwise Specified) Parameter Type Min. Typ. | Max. Units Test Conditions BVpss Drain Source Breakdown Voltage |IRFD120,2} 100 - - Vv Vos = OV iRFD121,3 60 - - v Ip = 250pA Vgsith) Gate Threshold Voltage ALL 20 | - [| 40 Vv Vos = Vas. 'p = 250%A lass Gate Source Leakage Forward ALL = = 500 nA Vos = 20V 'gss__ Gate Source Leakage Reverse ALL = | -500 nA Vg6sg = -20V Ipsg Zero Gate Voltage Drain Current ALL = = _| 250 BA Vos = Max. Rating, Vgg = OV = = 1000 uA Vps = Max. Rating x 0.8, Vgg = OV, Te = 125C Ipjon) On-State Drain Current @ iRFO120,1| 1.3 - A Vv \ R Vv tov iarDi2z.3} 1a = = A DS ) 'Dfon) * RDSion) max. VGS = Rpsion) Static Drain Source On-State IRFD120, 1 - 0.25 } 0.30 a Resistance @ TRFDI22, 3 0.30 10.40 2 Ves = 10V, Ip = 0.6A 9fs Forward Transconductance (2) ALL 0.9 1.0 = S$ (Uh Vos ? !pion) X RpSion) max. '!p = 0-64 Cisg Input Capacitance ALL - 450 = pF V@s = OV. Vog = 28V. f = 1.0 MHz Coss Output Capacitance ALL ~ 200 _ pF See Fig. 9 Crss Reverse Transfer Capacitance ALL = 50 ~ pF tajon) _Turn-On Delay Time ALL = 20 | 40 ns Vop = 0.5 BVpgs, Ip = 0.6A, Z, = 502 t Rise Time ALL = 35 70 ns See Fig. 16 ta(off) _ Turn-Off Delay Time ALL _ 50 100 ns {MOSFET switching times are essentially tf Fall Time ALL _ 35 70 ns independent of operating temperature.) Qg Total Gate Charge ALL _ "1 15 nc Ves = 10V. |p =5.2A, Vpg = 0.8 Max. Rating. {Gate-Source Plus Gate-Drain} See Fig. 17 for test circuit. (Gate charge is essentially independent of operating temperature.) Qgs Gate-Source Charge ALL ~ 6.0 9.0 nc Ogg Gate-Drain {Miller) Charge ALL - 5.0 75 ac Lp internal Drain Inductance ALL _ 40 _ nH Measured from the drain lead, 2.0mm Modified MOSFET (0.08 in.) from symbol showing the package to center of internal device die inductances. o ls Internal Source Inductance ALL _ 6.0 - oH Measured from the source lead, 2.0mm 6 (0.08 in.) from package to source < bonding pad. Thermal Resistance [ RihjA Junction-to-Ambient l ALL I _ | = | 120 I cw ] Free Air Operation Source-Drain Diode Ratings and Characteristics Ig Continuous Source Current (RFD120, 1 _ = 1.3 A Modified MOSFET symbol . (Body Diode) IRFD122, 3 _ _ 11 A showing the integral reverse P-N junction rectifier. Ism Pulse Source Current (Body Diode} {RFD120, 1 = = 5.2 A IRFD122,3| | 44 A . Vso Diode Forward Voltage @ !RFO120, 1 _ - 2.5 Vv Te = 25C, Ig = 1.34, Veg = OV IRFO122,3] = 2.3 Vv Tc = 28C, Ig = 1.1A, Vgg = OV tre Reverse Recovery Time ALL _ 280 > as Ty = 180C, Ip = 1.3A, dip/dt = 1O00A/ys Qrr Reverse Recovered Charge ALL _ 1.6 ~_ uC Ty = 150C, Ip = 1.3A, dip/dt = 100A/ps ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lp. @Ty = 25C to 150C. @Pulse Test: Pulse width < 300us, Duty Cycle < 2%. 3-215Standard Power MOSFETs: IRFD120, IRFD121, IRFD122, IRFD123 20 80 us PULSE ws PULSE TEST Vos > !p{an) * 1 16 Ros(on} max. a a 2 = we a = = 212 22 2 z e = 3 z = 8 z 8 a <= S S 2 BS 4 4 Q 10 20 30 40 50 0 2 4 6 8 16 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vgg, GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 10 5 us PULSE TEST 2 a 3 a 10 a S = a = z 0s = be e = Z = 02 a 2 8 = 01 z . z z Ty = 150C MAX. oS 5 0.05 Pu 3 a 0.02 0.01 0.005 : 0 1 2 3 4 5 ot 02 O05 10 2 5 10 20 50 100 Vg. ORAIN-TO-SQURCE VOLTAGE {VOLTS} Vpg, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area 2 S ~ wn 8 a i z = = <= a e a = Ss o 2 z z =< 10 oO x 2 a a 2 Vos> * Boston) max, a 80 vs PULSE TEST < 2 Ty = 2590 1.0 o 4 8 2 16 20 0 1 2 3 4 Ip. DRAIN CURRENT (AMPERES) Vp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 5 Typical Transconductance Vs, Drain Current Fig. 6 Typical Source-Drain Diode Forward Voltage 3-216Standard Power MOSFETs IRFD120, IRFD121, IRFD122, IRFD123 a 0 = a . o o wn o Rosion). DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2 = a 2 a BV pss. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 0.75 02 40 0 40 80 120 160 -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (2C) Fig. 7 Breakdown Voltage Vs. Temperature Fig. 8 Normalized On-Resistance Vs. Temperature 1000 20 Vgs * 0 f= 1MHz | 4 800 Cigs = Coy + Coq, Cas SHORTED 2 Vps = 20V Crs = G, S15 . face = Vps = 50v _ Coss * Cus + wi | = goo oe Cy < = 80V, IRFD120, 8 = Cds + Coa 3 z | 5 = 3 10 uo ec = 3 < 400 2 o e ws w zt 5 5 200 & tp = 5.24 FOR TEST CIRCUIT SEE FIGURE 17 0 10 20 30 40 50 9 4 8 12 16 20 Vpg- DAAIN-TO-SOURCE VOLTAGE (VOLTS) Og, TOTAL GATE CHARGE (nC) Fig. 9 Typicat Capacitance Vs. Drain-to-Source Voltage Fig. 10 Typical Gate Charge Vs. Gate-to-Source Voltage 08 15 a = =x Ss 3 2 2 06 Vgg = 10V _ 1. 5 B IRFD120, 21 a a = z | = 09 - we = @ 04 a 2 ec 8 ] 2 IRFD122, 23 2 = 06 . 4 Fe ey | S < Veg = 20V . 2 02 + + od g 03 a | _ Rpsion) MEASURED WITH CURRENT PULSE OF = 2.0 us DURATION. INITIAL Ty = 28C. (HEATING EFFECT OF 2.0 us PULSE 1S MINIMAL} 4 L L 0 0 10 0 30 40 25 60 78 100 125 150 Ip, DRAIN CURRENT (AMPERES) Ta, AMBIENT TEMPERATURE (9C} Fig. 11 Typical On-Resistance Vs. Drain Current Fig. 12 Maximum Drain Current Vs. Case Temperature 3-217Standard Power MOSFETs IRFD120, IRFD121, IRFD122, IRFD123 14 12 Rinua = 120 C/W 06 Nn POWER DISSIPATION (WATTS) N 04 oa 0.2 ow Q 20 40 60 80 = 100120140 Ta, AMBIENT TEMPERATURE (C) Fig. 13 Power Vs. Temperature Derating Curve Fig. 15 Clamped Inductive Waveforms 12V BATTERY REGULATOR VARY ty TO OBTAIN REQUIRED PEAK I Vgg = 10V be-ty E,=05BVpsg c = 0.75 BVpsg Fig. 14 Clamped Inductive Test Circuit ADJUST Ry. TO OBTAIN SPECIFIED Ip PULSE GENERATOR fcr cco TO SCOPE 0.0122 HIGH FREQUENCY J | | Lo SHUNT Fig. 16 Switching Time Test Circuit o *VDS (ISOLATED SUPPLY) SAME TYPE AS OUT O -VOS CURRENT = CURRENT SAMPLING SAMPLING RESISTOR RESISTOR Fig. 17 Gate Charge Test Circuit 3-218.