MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode e {deal for Peripherat Control Applications e Intermediate 1 Watt Power Capability Standard DIP Outline IRFD120 IRFD123 TMOS FET TRANSISTORS FET DIP TMOS 1 DRAIN 1 3 2 2 GATE CASE 370-01, STYLE 1 3 SOURCE MAXIMUM RATINGS (Tag = 25C unless otherwise noted) Rating Symbol IRFD120 IRFD123 Unit Drain-Source Voltage Vpss 100 60 Vde Drain-Gate Voltage VDGR 100 60 Vde (Ras = 20 kQ) Gate-Source Valtage Ves +20 Vde Drain Current Continuous Tc = 25C Ip 1.3 1.1 Adc Pulsed IDM 5.2 44 Total Power Dissipation @ Tc = 25C Pp 1.0 Watts Derate above 25C 8.0 mwrc Operating and Storage Temperature Range TJ, Tstg 55 to +150 0) THERMAL CHARACTERISTICS Thermal Resistance Junction-to-Ambient ReJA 120 CIRFD120 IRFD123 ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristic Symbol | Min | Typ | Max [unit | OFF CHARACTERISTICS Drain-Source Breakdown Voltage IRFD120 V(BR)DSS 100 Vde (Vas = 9, Ip = 250 pA) IRFD123 60 _ _ Zero Gate Voltage Drain Current (Vpgs = Rated Vpgs, Vas = 0 V) Ipss _ a 250 pAde Gate-Body Leakage Current, Forward (Va@gF = 20 V) lassr a _ 500 nAdc Gate-Body Leakage Current, Reverse (Va@gp = 20 V) lassR a a -00 nAdc ON CHARACTERISTICS Gate Threshold Voltage VGSi(th) 20 a 40 Vde (ID = 250 nA, Vpg = Vag) Static Drain-Source On-Resistance (1) IRFD120 RDSion) ad a 03 Ohms (Vas = 10 Vde, Ip = 06 A) IRFD123 _ _ 0.4 On-State Drain Current (1) IRFD120 ID(on) 1.3 _- ad Adc (Vgs = 10 V, Vps = 5.0 V) IRFD123 V1 _ Forward Transconductance (1) OFS 0.9 _ _ mhos (Ip =O 6A, Vpg = 5.0 V} CAPACITANCE Input Capacitance Ciss 600 pF (Vps = 25 V, Vas =0, _ __ Output Capacitance f=10MHz) Coss 400 Reverse Transfer Capacitance Crsg aad 100 SWITCHING CHARACTERISTICS Turn-On Delay Time td(on) a a 40 ns Rise Time (Vpg = 0.5 V(BR)DSS: tr _ _- 70 Turn-Off Delay Time Ip = O6 A, Zp = 50 2) ta(off) _ _ 100 Fall Time tf al 70 SOURCE-DRAIN DIODE CHARACTERISTICS Diode Forward Voltage (Vag = 0) Ig = 1.3 A, IRFD120 VE 25 Vde Ig =11A, IRFD123 7 aa 23 Continuous Source Current, Body Diode IRFD120 Is _ _ 1.3 Adc IRFD123 a a 11 Pulsed Source Current, Body Diode IRFD120 Ism aa 5.2 A IRFD123 _ _ 44 Forward Turn-On Time ton negligible ns (Ig = Rated is, Vag = 0) Reverse Recovery Time ter _ | 280 | a 1. Pulse Test Pulse Width < 300 ps, Duty Cycle <2 0%.