Rugged Power MOSFETs IRFD120R, IRFD121R, IRFD122R, IRFD123R Avalanche Energy Rated N-Channel Power MOSFETs 1.3A and 1.1A, 60V-100V fos(on) = 0.300 and 0.400 Features: @ Single pulse avalanche energy rated @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance The IRFD120R, !RFO121R, IRFD122R and IRFD123R are advanced power MOSFETs designed, tested, and guaran- teed to withstand a specified level of energy in the break- down avalanche mode of operation. These are n-channel enhancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- File Number 2036 N-CHANNEL ENHANCEMENT MODE 92CS-426508 TERMINAL DIAGRAM TERMINAL DESIGNATION ail [J [Ja , seabed i" in TOP VIEW ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be 4-PIN DIP operated directly from integrated circuits. The IRFD-types are supplied in the 4-Pin dual-in-line plas- tic package. Absolute Maximum Ratings P; t IRFD120R | IRFD121R | IRFO122R | IRFD123R Units Vos Drain - Source Voltage @ 100 60 100 60 V Voca Drain - Gate Voltage (Res = 20 KQ) 100 60 100 60 Vv Ip @ Tc = 25C Continuous Drain Current 1.3 1.3 1.1 11 A lom Pulsed Drain Current .2 .2 4.4 4.4 A Ves Gate - Source Voltage +20 Vv Po @ Te = 26C Max. Power Dissipation 1.0 (See Fig. 13) Ww Linear Derating Factor 0.008 (See Fig. 13) w/C Eas Single Pulse Avalanche Energy Rating @ 36 mj Te SOE et ehange 55 0 150 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-184Rugged Power MOSFETs IRFD120R, IRFD121R, IRFD122R, IRFD123R Electrical Characteristics @ T; = 25C (Unless Otherwise Specified) Parameter Type Min. | Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage |iRFD120R = inFDi22R| 100 | | ~ | | Ves=O0Vv IRFD121R = IRFD123R 60 - _ v lo = 250uA Vesim Gate Threshold Voltage ALL 2.0 _ 4.0 Vv Vos = Ves, |p = 2504 A loss Gate-Source Leakage Forward ALL = ~ 500 nA Ves = 20V less ___ Gate-Source Leakage Reverse ALL = _ -500 nA Ves = -20V loss Zero Gate Voltage Drain Current = = 250 HA Vos = Max. Rating, Ves = OV ALL = | 1000 | pA | Vos = Max. Rating x 0.8, Ves = OV, Te = 125C Into + On-State Drain Current IRFD120R|} 43 _ _ A IRFD121R Vos > lotom X Roster max, Vas = 10V IRFD122R | 5, _ _ A IRFD123R . Rosie Static Drain-Source On-State IRFD120R * _ 0.25 0.30 a Resistance @ ae Ves = 10V, tp = 0.6A IRFD123R - 0.30 0.40 a | te Forward Transconductance @ ALL 0.9 1.0 = S()_|_ Vos > loten X Rosionmax, In = 0.6A Cus ___Input Capacitance ALL | 450 | ~ | PF | yc. = OV, Vos = 25V, f= 1.0 MHz Coss Output Capacitance ALL = 200 = pF See Fig. 9 Crs Reverse Transfer Capacitance ALL = 50 = pF taton Turn-On Delay Time ALL _ 20 40 ns Voo = 0.5BVoss, lo = 0.6A, Za = 502 t, Rise Time ALL _ 35 70 ns See Fig. 16 lator Turn-Off Delay Time ALL _ 50 100 ns (MOSFET switching times are essentially th Fall Time ALL _ 35 70 ns independent of operating temperature.) Qs Total Gate Charge ALL _ "1 18 nc Vas = 10V, lp = 5.2A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 17 for test circuit. (Gate charge is Qu Gate-Source Charge ALL 6.0 _ nc essentially independent of operating eR ATO temperature.) Qga Gate-Drain (Miller) Charge ALL = 5.0 = nc Lo Internal Drain Inductance ALL - 40 _ nH Measured from the Modified MOSFET drain lead, 2.0 mm symbo! showing the (0.08 in.) from package | internal device ,, to center of die. inductances Lo Ls Internal Source Inductance ALL = 6.0 _ nH Measured from the source lead, 2.0 mm So s (0.08 in.) from . package to source $ bonding pad. sacs eres) Thermal Resistance | RmJA _ Junction-to-Ambient J au [| | 120 | c | Free Air Operation Source- Drain Diode Ratings and Characteristics Is Continuous Source Current IRFD120R _ _ 13 A Modified MOSFET symbol (Body Diode) IRFD121R showing the integral IRFD122R 14 A reverse P-N junction rectifier. IRFD123R _ . tsm Pulse Source Current IRFD120R} _ _ 52 A co (Body Diode) IRFD121R . 2 IRF Di 22R erty s20se inFD123R| | | 44 | A Vso Diode Forward Voltage @ iRFO! 20R _ _ 25 Vv To = 25C, Is = 1.34, Vos = OV RT | | 23 | Vv | Te=25C,Is=1.1A, Vos =0V tre Reverse Recovery Time ALL = 280 ns Ty = 150C, Ir = 1.3A, dle/dt = 100A/yus Qrr Reverse Recovered Charge ALL = 1.6 = ie Ty = 150C, le = 1.3A, die/dt = 100A/ys ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. @ Ty = 25C to 150C. @ Pulse Test: Pulse width < 300us, Duty Cycle < 2%. Voo = 25V, starting Ts = 25C, L = 15mMH, Ros = 25, Ipeax = 6A. See figs. 15, 16.Rugged Power MOSFETs IRFD120RA, IRFD121R, IRFD122R, IRFD123R 20 us PULSE TEST Vos > 'o(an) * 6 Aipsion) max, a a = = Y a = = = <x 212 < 5 5 2 4 = oc s > 2 2 z 8 z x 5 3 x 4 a 10 20 30 40 50 a 2 4 6 8 10 Vos, DRAIN.TO-SQURCE VOLTAGE (VOLTS! Vgs, GATE TD-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 10 5 ws PULSE TEST 2 2 10 a 4 2 = & = =z 05 < e =z e z = 02 = > 5 3 6 1 z= 2 8 Ty = 180C MAX. 2 4 a S 0.05 a a 0.02 0.01 IRFDI20R, 28 0.005 0 1 2 3 4 5 01 02 Of 10 2 5 10 20 50 100 Vos. DRAIN. TO-SQUACE VOLTAGE (VOLTS) Vpg- DRAIN-TO-SQURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area 2 a 102 Z a 2 Zz = 5 z = z a S 3 = = 1509 3 =) Ty = 150C J SS oo 8 z z < 10 3 5 3 ws = no z a 5 = im Tye 2 Vos > x Rps(on) max. J 80 ps Test S 2 y= 25C 10 0 8 u 6 20 0 1 2 3 4 Ip, DRAIN CURRENT (AMPERES) Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 5 Typical Transconductance Vs. Drain Current Fig. 6 Typical Source-Drain Diode Forward Voltage 6-186Rugged Power MOSFETs IRFD120R, IRFD121R, IRFD122R, IRFD123R 1.25 ts 0.95 Vgg = 10V Ip = 0.64 BVpss, ORAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) Ros(an). ORAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 0.75 . 40 8 40 a0 120 160 -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (2C) Fig. 7 Breakdown Voltage Vs. Temperature Fig. 8 Normalized On-Resistance Vs. Temperature | |__ Apsign) MEASURED WITH CURRENT PULSE OF 2.0 us DURATION, INITIAL Ty = 25C. (HEATING EFFECT OF 2.0 us PULSE IS MINIMAL.) i L 1. i L e a 1000 2 Vigs 70 f+ 1 MHz t 1 800 Cig = Cop + Cog, Cys SHORTED a Vpg = 20V Cros * Coe a 15 Coy Cog = os S0V co = Cat _ 5 500 on Ce Ca < Vos = 80V, 3 =Car + Cod 3 > = 3 0 a = = 3 = 400 2 o ~ w <x o 5 200 8 ip =$2A FOR TEST CIRCUIT SEE FIGURE 17 0 19 20 30 40 50 a 4 8 7 16 20 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Q,y, TOTAL GATE CHARGE (nC) Fig. 9 Typical Capacitance Vs. Drain-to-Seurce Voltage Fig. 10 Typical Gate Charge Vs. Gate-to-Source Voltage 08 15 3 = = 3 8 12 2 os Vgg = 10V _t 5 a IRFD120R, 121, B 5 v a = = z | = aa kas z z 04 2 s @ 2 > iRFD122R, 123R ; 1 , i 2 z 06 z aA Z z = es 20V 8 S 02 GS 2 = 2 z a 4. 0 0 10 20 30 40 25 50 75 100 125 150 Ip, ORAIN CURRENT (AMPERES) Ta, AMBIENT TEMPERATURE (9C) Fig. 11 Typical On-Resistance Vs. Drain Current Fig. 12 Maximum Drain Current Vs. Case Temperature 6-187Rugged Power MOSFETs IRFD120RA, IRFD121R, IRFD122R, IRFD123R 14 12 = 120 KW Pp, POWER DISSIPATION (WATTS} o o = rs nm o o s x 20 40 60 80 100 120 140 Ta, AMBIENT TEMPERATURE (0C} Fig. 13 Power Vs. Temperature Derating Curve VARY tp TO OBTAIN REQUIRED PEAK IL. bur Res Yoo Vgg710 i Fe] Sb J 0.010 92CS- 42659 ~ 92CS- 42660 Fig. 14 Unclamped Energy Test Circuit Fig. 15 Unclamped Energy Waveforms o YDS CURRENT USOLATED REGULATOR SUPPLY) SAME TYPE Vv BATTERY ADJUST Rt 9 Yoo TO OBTAIN SPECIFIED Ip $ Ry v PULSE GENERATOR OUT. rc q | 15 mA TO SCOP a aT 0.0382 To score O Vos HIGH FREQUENCY = SHUNT CURRENT CUARENT SAMPLING SAMPLING oe RESISTOR RESISTOR Fig. 16 Switching Time Test Circuit Fig. 17 Gate Charge Test Circuit 6-188