OWE MOS FET ['bazcteKke FIELD EFFECT POWER TRANSISTOR 160, 60 VOLTS RDS(ON) = 0.3 2 This series of N-Channel Enhancement-mode Power N-CHANNEL MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear CASE STYLE 4-PIN DIP transfer characteristics makes it well suited for many linear DIMENSIONS ARE IN INCHES AND (MILLIMETERS) applications such as audio amplifiers and servo motors. Features orain [ PJ source Polysilicon gate Improved stability and reliability = e No secondary breakdown Excellent ruggedness Lone (922) toa Ultra-fast switching Independent of temperature ge] Voltage controlled High transconductance 2 ie Low input capacitance Reduced drive requirement WOT ccocsun L- + Excellent thermal stability Ease of paralleling 0022 1088) e fF . oe 0.15 fF (se ny (2.54) (3.81) maximum ratings (Ta = 25C) (unless otherwise specified) RATING SYMBOL IRFD120/D82CL2 | IRFD121/D82CK2 UNITS Drain-Source Voltage Voss 100 60 Volts Drain-Gate Voltage, Reg = 1M0 VpoGR 100 60 Volts Continuous Drain Current @ Ta = 25C ID 1.3 1.3 A @ Ta = 100C) 0.85 0.85 A Pulsed Drain Current IpbM .2 5.2 A Gate-Source Voltage Vas +20 +20 Voits Total Power Dissipation @ Ta = 25C Pp 1.0 1.0 Watts Derate Above 25C 8 8 mW/C Operating and Storage Junction Temperature Range Ty, Tsta@ -55 to 150 ~55 to 150 C thermal characteristics Thermal Resistance, Junction to Ambient Rasa 125 125 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds Th 300 300 C (1) Device mounted to vertical pc board in free air with drain lead soldered to 0.20 in? minimum copper run area. (2) Repetitive Rating: Pulse width limited by max. junction temperature. 237electrical characteristics (T, = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP MAX UNIT | off characteristics Drain-Source Breakdown Voltage IRFD120/D82CL2 BVpss 100 _ _ Volts (Vas = OV, Ip = 250 wA) IRFD121/D82CK2 60 _ Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Veg = OV, Ta = 25C) _ _ 250 LA (Vos = Max Rating, 0.8, Vag = OV, Ta = 125C) _ _ 1000 Gate-Source Leakage Current on characteristics Gate Threshold Voltage Ta = 25C | Ves(tH) 2.0 _ 4.0 Volts (Vos = Vas, Ip = 250 pA) On-State Drain Current _ _ (Vag = 10V, Vps = 10V) ION) | 18 A Static Drain-Source On-State Resistance (Vas = 10V, Ip = 0.6A) Rps(on) _ 0.22 0.30 Ohms Forward Transconductance . (Vpg = 10V, Ip = 0.6A) Ofs 63 1.0 _ mhos dynamic characteristics Input Capacitance Vas = OV Ciss _ 410 600 pF Output Capacitance Vos = 25V Coss _ 160 400 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 40 100 pF switching characteristics Turn-on Delay Time Vos = 30V ta(on) _ 15 _ ns Rise Time \p = 0.6A, Vag = 15V tr _ 30 _ ns Turn-off Delay Time RGEN = 500, Reg = 12.50 ta(off) _ 25 _ ns Fall Time (Res (Equiv. = 102) tf _ 10 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 1.3 A Pulsed Source Current Ism _ _ 5.2 A Diode Forward Voltage Ig = 1.3A _ (Ta = 25C, Vag = OV) Vsp 0.8 2.5 Volts Reverse Recovery Time ter _ 75 _- ns (Ig = 1.3A, dig/dt = 100A/us, Ta = 125C) Qra _ 0.7 _ uc *Pulse Test: Pulse width <= 300 us, duty cycle = 2% OPERA IN THIS AREA MAY BE LIMITED BY Ros(on) SINGLE PULSE Ta = 25 01 0.2 0.4 0.81.0 20 40 60 80100 200 2 Vos, DRAIN-SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 4 6 810 400 2.4 CONDITIONS: Rpg(on) CONDITIONS: Ip= 0.6A, Vgg = 10V V@S(TH) CONDITIONS: tp = 250A, Vg = Vgg 2.2 2.0 1.8 16 1.4 1.2 1.0 0.8 GS(TH) 06 Rosion AND Vegcria NORMALIZED 0.4 0.2 0 0 40 80 T,, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rygion AND Vos); VS- TEMP. 40 120 160 238