Product Datasheet Search Results:
6 Pages, 195 KB, Original- IRFF120_NL
- Fairchild Semiconductor
- Trans MOSFET N-CH 100V 6A 3-Pin TO-205AF
19 Pages, 625 KB, Original- IRFF120
- Motorola / Freescale Semiconductor
- TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
5 Pages, 163 KB, Scan- IRFF120
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A.
2 Pages, 122 KB, Scan- IRFF120
- General Electric
- Power Transistor Data Book 1985
5 Pages, 172 KB, Scan- IRFF120
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 182 KB, Scan- IRFF120R
- Harris Semiconductor
- Power MOSFET Data Book 1990
7 Pages, 1325 KB, Original- IRFF120
- Infineon Technologies Ag
- Trans MOSFET N-CH 100V 6A 3-Pin TO-39
7 Pages, 324 KB, Original- IRFF120
- Intersil Corporation
- 6.0A, 100V, 0.300 ?, N-Channel Power MOSFET
7 Pages, 200 KB, Original- IRFF120
- International Rectifier
- 6 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
7 Pages, 200 KB, Original- IRFF120PBF
- International Rectifier
- 6 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
1 Pages, 41 KB, Original- IRFF120R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
Product Details Search Results:
Fairchildsemi.com/IRFF120_NL
897 Bytes - 21:55:50, 21 September 2024
Infineon.com/IRFF120
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"20(W)","Continuous Drain Current":"6(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1437 Bytes - 21:55:50, 21 September 2024
Irf.com/IRFF120
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.2420 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1461 Bytes - 21:55:50, 21 September 2024
Irf.com/IRFF120PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.2420 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1528 Bytes - 21:55:50, 21 September 2024
Semelab.co.uk/IRFF120
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Case Connec...
1403 Bytes - 21:55:50, 21 September 2024
Semelab.co.uk/IRFF120-JQR-B
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Case Connec...
1441 Bytes - 21:55:50, 21 September 2024
Semelab.co.uk/IRFF120-JQR-BE1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","...
1501 Bytes - 21:55:50, 21 September 2024
Semelab.co.uk/IRFF120R1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","...
1466 Bytes - 21:55:50, 21 September 2024
Various/IRFF120R
{"C(iss) Max. (F)":"450p","Absolute Max. Power Diss. (W)":"20","V(BR)DSS (V)":"100","g(fs) Max, (S) Trans. conduct,":"2.9","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"100n","r(DS)on Max. (Ohms)":"300m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"24","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"1.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"3.0","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-205AF",...
1265 Bytes - 21:55:50, 21 September 2024
