Rugged Power MOSFETs IRFF120R, IRFF121R, iRFF122R, IRFF123R File Number 2023 Avalanche Energy Rated N-Channel Power MOSFETs 5.0A and 6.0A, 60V-100V N-CHANNEL ENHANCEMENT MODE fos(on) = 0.302 and 0.400 D Features: B Single pulse avalanche energy rated i SOA is power-dissipation limited S @ Nanosecond switching speeds @ Linear transfer characteristics s @ High input impedance 92cs-a2658 TERMINAL DIAGRAM The IRFF120R, IRFF121R, IRFF122R and IRFF123R are ad- TERMINAL DESIGNATION vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel en- gare hancement-mode silicon-gate power field-effect transis- source tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring DRAIN high speed and low gate-drive power. These types can be (CASE) operated directly from integrated circuits. The IRFF-types are supplied in the JEDEC TO-205AF (LOW-PROFILE TO-39) metal oackage. JEDEC TO-205AF Absolute Maximum Ratings ; Parameter JAFFI20R | IRFFI21R | IRFFI22R | IRFFI2Z3R | Units Vos Drain - Source Voltage @ 100 60 100 60 Vv Voor Drain - Gate Voltage (Ras = 20 KQ) 100 60 100 60 Vv lo @ Te = 25C Continuous Drain Current 6.0 6.0 5.0 5.0 A lon Pulsed Drain Current @ 24 24 20 20 A Ves Gate - Source Voltage +20 Vv Po @ Tc = 25C Max. Power Dissipation 20 (See Fig. 14) Ww Linear Derating Factor 0.16 (See Fig. 14) w/C Ens Single Pulse Avalanche Energy Rating @ 36 mj To Sbrage Fempersture Hange ~55 to 150 C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-214Rugged Power MOSFETs IRFF120R, IRFF121R, IRFF122R, IRFF123R Electrical Characteristics @ Tc = 25C (Uniess Otherwise Specified) Parameter Type Min. | Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage | IRFF120R _ inFFizaR| 100 | | | VY | Vas=ov IRFF121R IRFF123R | 8 - - v lo = 250uA Vasin Gate Threshold Voltage ALL 2.0 = 40 Vv Vos = Vas, to = 250 A lass Gate-Source Leakage Forward ALL = = 100 nA Ves = 20V loss Gate-Source Leakage Reverse ALL =- = -100 nA Vas = -20V Ipss Zero Gate Voltage Drain Current _ = 250 BA Vos = Max. Rating, Vas = OV ALL | [1000 | wa _| Vos = Max. Rating x 0.8, Vos = OV, Te = 125C lotom On-State Drain Current @ IRFF120R | 6 _ _ A IAFFA21R Vos > lorem X Roston) mas, Vas = 10V IAFFI22R | 65 _ _ A IRFF123A : Roston Static Drain-Source On-State IRFF120R " Resistance @ IRFFI21R | ~ | 025 | 0.30 | 2 - _ IRFF 122A Vas = 10V, to = 3.0A IRFF123R | | 090 | 040 | 1 | Gre Forward Transconductance @ ALL 15 29 _ S(W)_| Vos > lorem X Rosionmax, lo = 3.0A Cree Input Capacitance ALL = 450 = PF_ | Vos = OV. Vos = 25V, f= 1.0 MHz Cos Output Capacitance ALL = [200 [= T pF] seorig. io Cre Reverse Transfer Capacitance ALL = 50 = pF tatow - Turn-On Delay Time ALL _ 20 40 ns Von = 0.5BVoss, In = 3.0A, Zo = 502 t. Rise Time ALL = 37 70 ns See Fig. 17 taom __Turn-Off Detay Time ALL 50 100 ns (MOSFET switching times are essentially tt Fall Time ALL _ 35 70 ns independent of operating temperature.) Qs. Total Gate Charge ALL _ 10 18 nc Vas = 10V, lo = 10A, Vos = 0.8V Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Q Gate-Source Charge ALL 6.0 _ nc essontially infependent of operating Qoa Gate-Drain (Miller) Charge ALL = 40 = nc emperature.) Lo Internal Drain inductance ALL _ 5.0 _- nH Measured from the Modified MOSFET drain lead, 5 mm symbol showing the (0.2 in.) from header internal device , to center of die. inductances Lo Ls Internal Source Inductance ALL _ 15 _ nH Measured from the source lead, 5 mm Sa {0.2 in.) from vs header to source $ bonding pad. seen azess Thermal Resistance RAsJC_ Junction-to-Case ALL - = 6.25 | C/W ReJA Junction-to-Ambient ALL _ _ 175 | C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRFF120R, _ _ 6.0 A Modified MOSFET symbol (Body Diode) (FIFF121Ri : showing the integral IFIFF122Ft 5.0 A reverse P-N junction rectifier. 8 IFFFI23F | ~ : Isna Pulse Source Current [RFFIZOR | _ 24 A s (Body Diode) IFIFF121Ft (FLFF122Ft area atese IRFFi23n| ~ | | 2 | A Vso Diode Forward Voltage @ IRFF120F | _ = = = IFIFF121Ft 25 Vv Te = 25C, Is = 6.0A, Vas = OV Inez; | | 28 | v_ | To=25C, Is=5.0A, Vos = OV te Reverse Recovery Time ALL = 230 = ns__| Ts = 150C, lp =6.0A, dir/dt = 100A/ps_ Qra Ri Ri ed Charge ALL = 1.2 _ uC __| Ts = 150C, le = 6.0A, dle/dt = 100A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. Ts = 28C to 150C. Pulse Test: Pulse width = 300us, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Voo = 25V, starting T, = 25C, L = 1.5MH, Ros = 252, Ipeex = 6A. See figs. 15, 16. 6-215Rugged Power MOSFETs IRFF120RA, IRFF121R; IRFF122R, IRFF123R PULSE TEST Vos > !pfan) * Apsion) max. Tye Tye rs Ip. RAIN CURRENT (AMPERES) ip, DRAIN CURRENT (AMPERES) 0 10 20 0 40 50 0 2 4 6 8 10 Vgs. OAAIN TO SOURCE VOLTAGE (VOLTS! Vgs. GATE TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics OEY PET | q OPERATION IN THIS } t 10 1 AREA IS LIMITED vdos | BY Rpsion) bros p00 vs PULSE TEST prod | my Oust a t zB ++ = | TY 100 ps g +- 2 | 3 sf 4 = HHf = oe Zs + 2 b. 4 5 5 | e eal las , = \ = 2 f-+ 3 vid ng 3 i z eff z! z < = [PREV ms & 2 . it 2 o5-1,- : + M100 ma 150C MAX * Types wit 2 | Rthuc = 6.25C/w +t vg G2 [SINGLE PULSE, NY oc e+ i beds fj Coetee IRFFI2IA, OR f- +1f IRFFI20R, 2A a1 pe yi Q 1 102 5 1 20 50 100 200 $00 Vps. DRAIN TD SOURCE VOLTAGE (VOl.TS! Vp. DRAIN TO SQUACE VOLTAGE IVOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area ~ Ss a S _ a 1. DUTY FACTOR, D = z s & THERMAL IMPEDANCE {PER UNIT) 0.02 SINGLE PULSE (TRANSIENT 2. PER UNIT BASE = Ringe = 6.25 DEG. C/W THERMAL IMPEDANCE) 3. Ty -Te* Pom Zmngcit on 2 S14 2 Ss ws 2 5 w2 2 $s owl 2 5 wo $10 ty, SQUARE WAVE PULSE DURATION (SECONOS) Zengclt/Aypyje, NORMALIZED EFFECTIVE TRANSIENT Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 6-216OVogs, DRAIN-TO-SOURCE BREAKOOWN VOLTAGE Ws. TRANSCONDUCTANCE (SIEMENS) Vos > * Basion) max. TEST a W 16 1p. DRAIN CURRENT (AMPERES) 20 Fig. 6 Typical Transconductance Vs. Drain Current (NORMALIZEO) C, CAPACITANCE (pF) 125 120 11S 1.10 1.00 095 090 085 O75 60 40 2 0 2 40 60 Ty, JUNCTION TEMPERATURE {C} 100 120 Fig. 8 Breakdown Voltage Vs. Temperature 0 (= MHz ey Cing = Sgp + Cyy, Coy SHORTED Com * Coa Cee Cag + Ogg | 10 20 a Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 10 - Typical Capacitance Vs. Drain-to-Source Voltage 140 Ros(on). DRAIN-TO-SOURCE ON-STATE RESISTANCE (NOAMALIZED) lpn, REVERSE DRAIN CURRENT (AMPERES) Rugged Power MOSFETs IRFF120R, IRFF121R, IRFF122R, IRFF123R n wn N Ty = 15096 2 3 Vsp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 7 Typical Source-Drain Diode Forward Voltage 2.50 225 2.00 175 0.75 0.25 1.50 1.25 1,00 a 6 40 20 #0 20 a0 Ty, JUNCTION TEMPERATURE (C) 60 80) (100 1200 140 Fig. 9 Normalized On-Resistance Vs. Temperature Vgg. GATE TO SOURCE VOLTAGE (VOLTS) 'v ! I ' 80V IRFF1. Vos < 20 Vos = 50V i }20R, 122R, Ip * 108 FOR TEST CIRCUIT SEE FIGURE 18 V2 16 20 ay TOTAL GATE CHARGE aC) Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 6-217Rugged Power MOSFETs IRFF120R, IRFF121R, IRFF122R, IRFF123R os g 3 8 os Ves * 10V < 2 g z o o 2 04 2 z " oa 8 a2 c Ves * 20V 5 BL ansiog MEASURED WITH CURRENT PULSE OF 2.0 ys OURATION. INITIAL Ty = 25C. (HEATING EFFECT OF 2.0 us PULSE IS MINIMAL} De i 0 10 20 30 {p, ORAIN CURRENT (AMPERES) Fig. 12 Typical On-Resistance Vs. Drain Curr 20 Pg. POWER DISSIPATION {WATTS} s Q Bn 40 ent a 48 3 IRFF120R, 1218 = 3 = a 36 z = IRFF122A, 123A S 3 z 24 < = oO 2 nN 25 50 75 100 125 150 Tr, CASE TEMPERATURE (C) Fig. 13 Maximum Drain Current Vs. Case Temperature 100 120 148 Te. CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve Vos f L + VARY tp TO OBTAIN REQUIRED PEAK I, ouT . Res ~Yoo Vgg tov Ww 6s o* 7 0.010. AA 92CS- 42659 ~ Fig. 15 Unclamped Energy Test Circuit AOIUST RAL OE} TO OBTAIN : PULSE GENERATOR OUT. r----- ! > TO SCOPE | ip} Sasin 1 1 sea HIGH FREQUENCY [ Se | SHUNT Fig. 17 Switching Time Test Circuit 6-218 92CS- 42660 Fig. 16 Uncilamped Energy Waveforms o *Yos CURRENT {tSOLATED REGULATOR SUPPLY) SAME TYPE AS DUT barreny 4 02H _ -Vos 'g CURRENT = SHUNT CURRENT SHUNT Fig. 18 Gate Charge Test Circuit