[RFF 120,121 PAO Res [FET FIELD EFFECT POWER TRANSISTOR 100, 80 VOLTS RDS(ON) = 0.3 2 Preliminary This series of N-Channel Enhancement-mode Power N-CHANNEL MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear Zo CASE STYLE TO-205AF (TO-39) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 9.360-0.370 transfer characteristics makes it well suited for many linear {8.880-8-396) applications such as audio amplifiers and servo motors. +H war sosr 0.019-0.033 Features 0390-0100. (0.483-0.836) cana e Polysilicon gate Improved stability and reliability t PLANE 0.009-0.018 I}1 Y2 Y3 ~~ orain No secondary breakdown Excellent ruggedness Uitra-fast switching Independent of temperature Voltage controlled High transconductance Low input capacitance Reduced drive requirement Excellent thermal stability Ease of paralleling 0.500 (12.70) MIN 0.029-0.045 {0.737-4.143) 0.028-0.034 (0.711-0.864) x (0.229-0.457) tr GATE ~ SOURCE 0.016-0.01 7 be (0.406-0.48: 0. 45" .190-0.210 (4:826-5.354) [wee | to-205aF | source | { term. [| TeAM. GATE | 2 | terma | DRAIN | maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRFF120 IRFF121 UNITS Drain-Source Voltage Voss 100 60 Volts Drain-Gate Voltage, Ras = 1M0. VpGR 100 60 Volts Continuous Drain Current @ Tg = 25C Ib 6 6 A Pulsed Drain Current lpm 24 24 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ To = 25C Pp 20 20 Watts Derate Above 25C 0.16 0.16 WwC Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 ~55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Resc 6.25 6.25 C/W Thermal Resistance, Junction to Ambient Rasa 175 175 C/W Maximum Lead Temperature for Soldering Purposes: 1/16 from Case for 10 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 261 electrical characteristics (Tg = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRFF120 | BVpss 100 _ _ Volts (V@s = OV, Ip = 250 wA) IRFF121 60 _ _ Zero Gate Voltage Drain Current Ipss (Vpg = Max Rating, Vag = OV, Tc = 25C) 250 uA (Vpg = Max Rating, x 0.8, Vgs = OV, Tc = 125C) _ 1000 Gate-Source Leakage Current (Vag = +20V) lass _ _ +100 nA on characteristics* Gate Threshold Voltage To = 25C | Vascth) 2.0 _ 4.0 Volts (Vos = Vas; |p = 250 nA) On-State Drain Current (Vas = 10V, Vg = 10V) ID(on) | 60 - A Static Drain-Source On-State Resistance _ _ (V@g = 10V, ID = 3A) Rps(ON) 0.3 Ohms Forward Transconductance (Vps = 10V, Ip = 3A) Ofs 1.35 _ _ mhos dynamic characteristics Input Capacitance Vas = 10V Ciss _ 600 pF Output Capacitance Vos = 25V Coss _ _ 400 pF Reverse Transfer Capacitance f=1MHz Crss ~ _ 100 pF switching characteristics Turn-on Delay Time Vos = 30V ta(on) _ 20 _ ns Rise Time Ip = 3A, Vas = 15V tr _ 35 _ ns Turn-off Delay Time RGEN = 502, Res = 12.59. ta(off) _ 50 _ ns Fall Time (Res (EQuiv.) = 100) te _ 35 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 6 A Pulsed Source Current Ismw _ _ 24 A Diode Forward Voltage Vv _ 2.5 Volt (To = 25C, Vag = OV, Is = 6A) SD ous Reverse Recovery Time ter _ 230 _ ns (Ig = 6A, dig/dt = 100A/usec, To = 125C) Qrr _ 1.2 uc *Pulse Test: Pulse width <= 300 us, duty cycle = 2% 100 80 CONDITIONS: Ros(ON) CONDITIONS: Ip = 3 A, Vag = 10V V@g(TH) CONDITIONS: Ip = 280nA, Vg = Vag 60 40 Rosion} NORMALIZED Wy GST 1.0 08 06 To * 26C Ty = 180C MAX. 0.4 Rthuc = 6.25 KAW SINGLE PULSE GS(TH} } Ip, DRAIN CURRENT (AMPERES) - sy AND Vesgrriss Reeig osiot 02 TION IN THIS AREA IS LIMITED on BY Rps(on) (RFF121 40 2 4 6 810 20 40 80 80100 200 400 600 8 40 0 40 80 420 160 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Ty, JUNCTION TEMPERATURE (C) MAXIMUM SAFE OPERATING AREA TYPICAL NORMALIZED Rpygjon, AND Ves;71) VS. TEMP. 262