Product Datasheet Search Results:
5 Pages, 149 KB, Scan- IRF611
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 3.5A, 150-200V
4 Pages, 200 KB, Original- IRF611
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF611
- Frederick Components
- Power MOSFET Selection Guide
5 Pages, 165 KB, Scan- IRF611
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A.
2 Pages, 125 KB, Scan- IRF611
- General Electric
- Power Transistor Data Book 1985
5 Pages, 176 KB, Scan- IRF611
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 192 KB, Scan- IRF611R
- Harris Semiconductor
- Power MOSFET Data Book 1990
1 Pages, 42 KB, Scan- IRF611
- International Rectifier
- 3.3 A, 150 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
1 Pages, 42 KB, Scan- IRF611PBF
- International Rectifier
- 3.3 A, 150 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
1 Pages, 41 KB, Original- IRF611R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
Product Details Search Results:
Irf.com/IRF611
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"8 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.3 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SI...
1335 Bytes - 03:27:14, 21 September 2024
Irf.com/IRF611PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"8 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdo...
1408 Bytes - 03:27:14, 21 September 2024
Various/IRF611R
{"C(iss) Max. (F)":"135p","Absolute Max. Power Diss. (W)":"43","g(fs) Max, (S) Trans. conduct,":"1.3","I(D) Abs. Max.(A) Drain Curr.":"2.1","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"21n","r(DS)on Max. (Ohms)":"1.5","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"8","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"0.8","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.6","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packag...
1293 Bytes - 03:27:14, 21 September 2024
