Rugged Power MOSFETs File Number 1988 Avalanche Energy Rated N-Channel Power MOSFETs 2.0A and 2.5A, 150V-200V fos(on) = 1.59 and 2.40 Features: @ Single pulse avalanche energy rated @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics i High input impedance IRF610R, IRF611R, IRF612R, IRF613R N-CHANNEL ENHANCEMENT MODE o 9208-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION The IRF610R, IRF611R, IRF612R and IRF613R are ad- SOURCE to withstand a specified level of energy inthe breakdown DRAIN == ona avalanche mode of operation. These are n-channel en- (FLANGE) - O- pet hancement-mode silicon-gate power field-effect transis- SS: = tors designed for applications such as switching regulators, GATE switching converters, motor drivers, relay drivers, and driv- TOP VIEW ers for high-power bipolar switching transistors requiring 92cs-39828 high speed and low gate-drive power. These types can be JEDEC TO-220AB operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-220AB plastic package. Absolute Maximum Ratings Parameter IRF610F IRF611R IRF612R IRF613R Units Vos Drain - Source Voltage 200 150 200 150 Vv Vocr Drain - Gate Voltage (Res = 20 KQ) 200 150 200 150 Vv Ip @ Te = 25C Continuous Drain Current 2.5 2.5 2.0 2.0 A lo @ Tc = 100C Continuous Drain Current 15 1.5 1.25 1.25 A tom Pulsed Drain Current @ 10 10 8.0 8.0 A Vas Gate - Source Voltage +20 Vv Pp @ Te = 25C Max. Power Dissipation 20 (See Fig. 14) Ww Linear Derating Factor 0.16 (See Fig. 14) wet Ens Single Pulse Avalanche Energy Rating @ 30 mj ve Speraing Junction ge 5510150 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-97Rugged Power MOSFETs IRF610R, IRF611R, IRF612R, IRF613R Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) ton Forward Turn-on Time Parameter Type Min. | Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage IRF610R _ _ = IRF612R 200 Vv Ves = OV IRF611R = IRF613R 150 _ _- Ip = 250uA Vasem Gate Threshold Voltage ALL 2.0 =_ 4.0 Vv Vos = Ves, ln = 2500 A lass Gate-Source Leakage Forward ALL = _ 500 nA Ves = 20V lass Gate-Source Leakage Reverse ALL = = -500 nA Ves = -20V loss Zero Gate Voltage Drain Current _ = 250 HA Vos = Max. Rating, Ves = OV ALL [~_ [= [4000 | pA [| Vos= Max. Rating x 0.8, Ves = OV, Te = 125C loro + On-State Drain Current @ IRF6IOR| o _ _ A IRF611R . Vos > Into X Rosion max. Vas = 10V IRF612R inFe13R; 29 | | A Rosion Static Drain-Source On-State IRF6E1OR|} 10 15 Q Resistance @ ares a Ves = 10V, Ip = 1.25A l iRF6iaR| ~ | 1 | 24 | 2 |_Qte Forward Transconductance @ ALL 0.8 1.3 - S(G)_ | Vos > Inion X Rosionimax., 1p = 1.254 Cine Input Capacitance ALL - 135 = pF Ves = OV, Vos = 25V, f= 1.0 MHz Coss Output Capacitance ALL _- 60 = pF See Fig. 10 Cras Reverse Transfer Capacitance ALL ~ 16 _ pF tation Turn-On Delay Time ALL _ 8.0 15 ns Vop = 0.5BVoss, lo = 1.25A, Zo = 50Q te Rise Time ALL = 15 25 ns See Fig. 17 taom _ Turn-Off Delay Time ALL _- 10 15 ns (MOSFET switching times are essentially tt Fall Time ALL _ 8.0 15 ns independent of operating temperature.) Qs Total Gate Charge ALL _ 5.0 75 nc Ves = 10V, In = 3.0A, Vos = 0.8V Max. Rating. (Gate-Source Plus Gate-Drain) : : See Fig. 18 for test circuit. (Gate charge is Qos Gate-Source Charge ALL 20 nc essentially independent of operating SRA iler' temperature.) Qya Gate-Drain (Miller) Charge ALL 3.0 _ nc Lo Internal Drain tnductance - 3.5 = nH Measured from the Modified MOSFET contact screw on tab symbot showing the to center of die. internal device ALL _ 45 nH | Measured from the inductances. drain lead, 6mm (0.25 in.) from package to uo center of die. Ls Internal Source Inductance ALL _ 75 _ nH Measured from the oe Ls source lead, 6mm (0.25 in.) from s package to source a2cs azees bonding pad. Thermal Resistance RaJC _Junction-to-Case ALL = = 6.4 C/W RnCS Case-to-Sink ALL _ 1.0 = C/W | Mounting surface flat, smooth, and greased. RiJA Junction-to-Ambient ALL _ _ 80 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRFE1OR| _ 25 A Modified MOSFET symbol (Body Diode) IRF611R . showing the integral b IRF612R 2 reverse P-N junction rectifier. iRF6I3R| | Oo | A Isna Pulse Source Current IRF61IOR| _ 10 A Ss (Body Diode) @ IRF611R IRF612R src anase inFeigR| ~ | ~ | 8 | A Vso Diode Forward Voltage @ IRFE1OR| _ _ _ IRF611R _ 2.0 v To = 25C, Is = 2.5A, Vas = OV IRF612R = a = IRF533R _ _ 1.8 Vv Te = 25C, Is = 2.0A, Ves = OV tr Reverse Recovery Time ALL = 290 = ns Ts = 180C, tr = 2.5A, dlr/dt = 100A/ps Qrr Reverse Recovered Charge ALL - 2.0 - uc Ts = 150C, le = 2.5A, dle/dt = 100A/ys ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. @ Ta = 25C to 150C. Pulse Test: Pulse width < 300us, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal impedance Curve (Fig. 5). @ Von = 20V, starting Ty = 25C, L = 8.73MH, Regs = 509, Ipeak = 2.5A. See figures 15, 16.ZrncttY Rypsc, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT} ip. DRAIN CURRENT (AMPERES) Ip, ORAIN CURRENT (AMPERES) 105 Rugged Power MOSFETs IRF610R, IRF611R, IRF612R, IRF613R Ty = 1259 \ Tye 1 Ty = -5C wm 1 Vos > 'ntan * Boston) max. tp, DRAIN CURRENT (AMPERES) 0 10 20 0 50 Q 2 4 6 8 10 Vag. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vos. GATE TO SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics OPERATION IN THIS AREA IS LIMITED BY Rosion) a 2 = 2 = < = = = = = S 3 2 <= = a 3 Te = 25C T= 150C MAX Arne = 6.4CW SINGLE PULSE . 0 10 20 30 40 50 2 5 10 100200500 Vos. DAAIN.TO-SOUACE VOLTAGE (VOLTS) Vos, DRAIN TQ SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area Fo 1. QUTY FACTOR, D = 2 2. PER UNIT BASE * Runge * 64 DEG. CW. THERMAL IMPEDANCE} 3. Tym = Te = Pom Zinuclt 2 5 we 2 $ 32 5 we 2 f gt 2 5 19? 5 10 ty, SQUARE WAVE PULSE QURATION (SECONDS) Fig. 5 Maxi Effective Transi Thermal | d JJ ion-to-Case Vs. Pulse DurationRugged Power MOSFETs JRF610R, IRF611R, IRF612R, IRF613R Vos > !pion) * Rosion) max. Ty = 15D0C J = 250C fis. TRANSCONDUCTANCE {SIEMENS} lon. REVERSE DRAIN CURRENT (AMPERES) 9 10 20 30 40 5.0 =) 1.0 20 30 40 5.0 Ip. DAAIN CURRENT (AMPERES) Vgp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typica! Source-Drain Diode Forward Voltage 114 2.04 ww 1.69 1.09 1 Vgg* 10v ise 108 1,06 M6 143 1.02 1.28 099 ty os7 098 0.94 0.82 BV pgs. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) Ros(on). ORAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 0.92 0.6? 0.89 052 5-345 -16 65 27) 475 68 885 109 1295 150 55-365 -14 65 27 475 68 885 109 1295 150 Ty, JUNCTION TEMPERATURE (9C) Ty, JUNCTION TEMPERATURE (C} Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature =0 'r we Cigg * Cop + Cyg, Cag SHORTED Cry Coa Cons * Cis + ee Oi + Cog Vos" Vos = 160V, IRF610R, 612R C, CAPACITANCE inf) Vgs. GATE.70-SQURCE VOLTAGE {VOLTS} Ip=3A FOR TEST CIRCUIT SEE 18 0 10 2 20 o 50 0 2 6 8 Vog. DRAII-TO-SOURCE VOLTAGE (VOLTS) Gy. TOTAL GATE CHARGE (nC) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 6-100VARY tp TO OBTAIN REQUIRED PEAK 1, ' Vgg710V i Fre] L | 0.018% Ros(on) WITH CURRENT PULSE OF 2.0 us OURATION. INITIAL Ty = 25C, (HEATING OF 2.0 us PULSE IS MINIMAL} Ryg(on). ORAIN-TO-SOURCE ON RESISTANCE (GHMS) 0 2 4 6 8 Ig. ORAIN CURRENT (AMPERES) Fig. 12 Typical On-Resistance Vs. Drain Current 20 a 20 Rugged Power MOSFETs IRF610R, (RF611R, IRF612R, IRF613R 3.0 24 18 IRF610A, 611R Ip, ORAIN CURRENT (AMPERES) 06 0 a 50 75 100 125 150 Tc, CASE TEMPERATURE (2C} Fig. 13 Maximum Drain Current Vs. Case Temperature ao 100 120 140 Te. CASE TEMPERATURE (OC) Fig. 14 Power Vs. Temperature Derating Curve Vos Ros 9205-42659 Fig. 15 Unclamped Energy Test Circuit ADJUST AL OE} TO OBTAIN SPECIFIED Ip $ AL y, PULSE GENERATOR OW.T. r 1 ( ! Lo ti TO SCOPE 0.010 HIGH FREQUENCY SHUNT 1 Fig. 17 Switching Time Test Circuit poem] Vos Nee ae ee 92CS- 42660 Fig. 16 Unclamped Energy Waveforms Vos CURRENT ISOLATED REGULATOR SUPPLY) Sf SAME TYPE av 7 AS OUT BATTERY ! AA Vos ig =o 1) CURRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit 6-101