IRF610 ott 2,M 2.5 AMPERES 200, 150 VOLTS RDS(ON) = 1.5 0 XO [MOS [FI FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power N-CHANNEL MOSFETs utilizes GEs advanced Power DMOS technology - D to achieve low on-resistance with excellent device rugged- wl ness and reliability. This design has been optimized to give superior performance 8 5 in most switching applications including: switching power CASE STYLE TO-220AB supplies, inverters, converters and solenoid/relay drivers. DIMENSIONS ARE (N INCHES AND (MILLIMETERS} Also, the extended safe operating area with good linear 404(10.26) 118285) 9014 9 assc.za transfer characteristics makes it well suited for many linear [rsene ote V7O(6 321) of he oat 33} applications such as audio amplifiers and servo motors. EO 2 7651073) FS -248(6.22) . CASE Features ot npaneure Polysilicon gate Improved stability and reliability 14513.68)py9, i $8518.09) vat eo | 2215 e No secondary breakdown Excellent ruggedness A : 8 ||. sie, e Ultra-fast switching Independent of temperature rena tt , .500(12.7}MIN. Voltage controlled High transconductance TERM2 | 95541.99) : . . . TERM.3 e Low input capacitance Reduced drive requirement 3310.84 A RE so72.72) . 02710.69) wees a O87(2.21) e Excellent thermal stability Ease of paralleling mee c vey 021 n89) a aaa aD, 075(0.38) UNIT TYPE |TERM.1TERM.2) TERM.3 TAB POWER MOS FET|T0-220-AB] GATE {DRAIN} SOURCE] DRAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF610/D84BN2 IRF611/D84BM2 UNITS Drain-Source Voltage Voss 200 150 Volts Drain-Gate Voltage, Ras = 1M VpaGrR 200 150 Volts Continuous Drain Current @ Tc = 25C Ip 2.5 2.5 A @ Tc = 100C 1.5 1.5 A Pulsed Drain Current lom 10 10 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 20 20 Watts Derate Above 25C 0.16 0.16 Ww/C Operating and Storage Junction Temperature Range Ty. Tsta -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rec 6.4 6.4 C/W Thermal Resistance, Junction to Ambient Resa 80 80 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds Th 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 189electrical characteristics (Tc = 25C) (unless otherwise specified) | . CHARACTERISTIC |symBo. | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF610/D84BN2 BVDss 200 _ _ Volts (Vag = OV, Ip = 250 uA) IRF611/D84BM2 150 _ _ Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Ves = OV, To = 25C) _ _ 250 HA (Vps = Max Rating, 0.8, Vgg = OV, To = 125C) _ 1000 Gate-Source Leakage Current on characteristics* Gate Threshold Voltage To = 25C | Vaes(TH) 2.0 _ 4.0 Voits (Vps = Vas, Ip = 250 A) On-State Drain Current | 25 _ _ A (Vag = 10V, Vg = 10V) D(ON) Static Drain-Source On-State Resistance (Vag = 10V, Ip = 1.254) Rps(ON) _ 1.28 1.5 Ohms Forward Transconductance (Vps = 10V, Ip = 1.25A) Sts 0.72 0.75 _ mhos dynamic characteristics Input Capacitance Ves = OV Ciss _ 120 150 pF Output Capacitance Vos = 25V Coss _ 40 80 pF Reverse Transfer Capacitance f = 1 MHz Crss _ 10 25 pF switching characteristics Turn-on Delay Time Vos = 90V ta(on) _ 5 - ns Rise Time Ip = 1.25A, Veg = 15V tr _ 15 _ ns Turn-off Delay Time Ragen = 509, Reg = 12.50 | tacoff) _ 10 _ ns Fall Time (Ras (EQuiv,) = 100) tt _ 10 _ ns source-drain diode ratings and characteristics* Continuous Source Current Is ~ _ 2.5 A Pulsed Source Current Ism _ 10 A Diode Forward Voltage _ (To = 25C, V@g = OV, Is = 2.5A) Vsp 0.9 2.0 Volts Reverse Recovery Time ter _ 150 _ ns (Ig = 2.5A, dig/dt = 100A/usec, Tc = 125C) Qrr 0.9 uC Pulse Test: Pulse width <= 300 us, duty cycle < 2% 100 60 40 b ARO nu ims: 1p, DRAIN CURRENT (AMPERES) gS go> -& M7oOo OPERATION IN THIS AREA MAY BE LIMITED BY Rosion) IRF611/D84BM2 IRF610/D84BN2 1 0.21 SINGLE PULSE iOms Ton 28C 0.1 1 2 4 6 810 20 40 6080700 200 Vps- ORAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 400 600 1000 190 2.4 22 CONDITIONS: Rosion) CONDITIONS: Ip = 1.25 A, Vag = 10V 2.0 Vgs(TH) CONDITIONS: Ip = 250xA, Vps = Vag 1.8 Rosion) 16 1.4 1.2 1.0 0.8 0.6 Vesiry) Rosiony AND Vaggern) NORMALIZED 0.4 0.2 0 -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rosion AND Vasitn) VS. TEMP.