ein FAIRCHILD ee A Schiumberger Company Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. @ Low Ropsjon) @ Vgs Rated at +20 V @ Silicon Gate for Fast Switching Speeds IRF6 10-613 MTP2N18/2N20 N-Channel Power MOSFETs, 3.5 A, 150-200 V Power And Discrete Division T-39- oF TO-220AB IScO010F Inss: Vos(on): Specitied at Elevated Temperature eed4 * Rugged IRF612 @ Low Drive Requirements IRF613 @ Ease of Paralleling MTPON18 MTP2N20 Maximum Ratings Rating IRF610/612 Rating Rating Symbol Characteristic MTP2N20 MTP2N18 IRF611/613 Unit Voss Drain to Source Voltage! 200 180 150 Vv Voer Drain to Gate Voltage 200 180 150 Vv Res = 20 kQ Ves Gate to Source Voltage +20 +20 20 Vv Ty, Tstg | Operating Junction and -55 to +150 -55 to +150 -55 to +150 G Storage Temperatures Th Maximum Lead Temperature 275 275 275 C for Soldering Purposes, 1/8 From Case for 5 s Maximum On-State Characteristics IRF610/611 MTP2N18/20 IRF6 12/613 Rpscon) | Static Drain-to-Source 1.5 1.8 2.4 Q On Resistance Ib Drain Current A Continuous at To = 25C 2.5 3.25 2.0 Continuous at Tg = 100C 1.5 2.25 1.25 Pulsed 10 9.0 8.0 Maximum Thermal Characteristics Reic Therma! Resistance, 6.4 2.5 6.4 C/W Junction to Case Raga Thermal Resistance, 80 80 80 C/W Junction to Ambient Pp Total Power Dissipation 20 50 20 Ww at To = 25C Notes For information concerning connection diagram and package outline, refer to Section 7. 2-152 Wot tae a Ei3469674 FAIRCHILD SEMICONDUCTOR gy pe ff s4n45674 ooa7auo 3 Tr IRF6 10-613 MTP2N18/2N20 [-39-O0% Electrical Characteristics (To = 25C unless otherwise noted) Symbol Characteristic | Min | Max | Unit | Test Conditions Off Characteristics Vieryoss | Drain Source Breakdown Voltage! Vv Veg =0 V, Ip = 250 pA IRF610/612/MTP2N20 200 MTP2N18 180 E IRF611/613 150 Ipss Zero Gate Voltage Drain Current 250 BA Vos = Rated Voss, Vas = 0 V 1000 pA Vps = 0.8 x Rated Vpss, Veg =0 V, Te = 125C less Gate-Body Leakage Current +500 nA Vas = +20 V, Vps=0 V On Characteristics Vesith) Gate Threshold Voltage Vv IRF610-613 2.0 4.0 Ip = 250 WA, Vos = Vas MTP2N18/20 2.0 4.5 Ip=1 MA, Vps = Ves Rogjon) | Static Drain-Source On-Resistance 2 Ves= 10 V, Ip=1.25 A IRF610/611 1.6 IRF612/613 24 IDp=10A MTP2N18/20 1.8 Vosion) | Drain-Source On-Voltage 4.4 Vv Veg = 10 V; Ip=2.0 A MTP2N18/2N20 3.6 Vv Ves = 10 V; Ip= 1.0 A; Tg = 100C fs Forward Transconductance 0.8 S (5) Vos = 10 V, Ip = 1.25 A Dynamic Characteristics Ciss Input Capacitance 200 pF Vos = 25 V, Veg =0 V Coss Output Capacitance 80 pF f= 1.0 MHz Criss Reverse Transfer Capacitance 25 pF . Switching Characteristics (Tc = 25C, Figures 11, 12) ta(on) Turn-On Delay Time 16 ns Vpp = 50 V, Ip = 1.25 A : t, Rise Time 25 ns nos = 0 < Raen = 50 &2 tury | Turn-Off Delay Time 15 ns ty Fall Time 15 ns Qg Total Gate Charge 7.6 no Vag =10 V, Ip=30A Vpp = 45 V 2-153ee 3469674 FAIRCHILD SEMICONDUCTOR 4y pe Bayese7y Ooe7d4i 5 I IRF610-613 MTP2N18/2N20 J- 3%-0% Electrical Characteristics (Cont.) (To = 25C unless otherwise noted) Symbol Characteristic | Typ Max | Unit | Test Conditions Source-Drain Diode Characteristics Vsp Diode Forward Voltage IRF610/641 20 Vv Ig =2.5 A; Veg=0 V IRF612/613 18 Vv Is = 2.0 A; Veg = 0 V te Reverse Recovery Time 290 ns Ig =2.5 A; dis/dt = 25 A/uS Notes 4. Ty = 425C to + 150C 2. Pulse test: Pulse width <80 ys, Duty cycle < 1% 9. Switching time measurements performed on LEM TR-58 test equipment. Typical Performance Curves Figure 2 Static Drain to Source Resistance Figure 1 Output Characteristics vs Drain Current 5 4.0 Vos= 10 V Veg =10 V MTP 3.2 te 80u8 PULSE XN = IpDRAIN CURRENTA eS 0.8 Rogie STATIC DRAIN TO SOURCE RESISTANCEQ 0 2 4 6 & 10 Q 1 2 3 4 5 Vps--DRAIN TO SOURCE VOLTAGEV IpDRAIN CURRENTA PCLISEOF PCL o70F Figure 4 Temperature Variation of Gate to Figure 3 Transfer Characteristics Source Threshold Voltage 7 13 6 1.2 a9 T=126C Ip DRAIN CURRENTA 0.7 NORMALIZED GATE THRESHOLD VOLTAGE 3 4 5 6 7 8 3 10 -50 0 50 100 150 VesGATE TO SQUACE VOLTAGEV T,-JUNCTION TEMPERATUREC PCUDEGE PCOdna IF 2-154perce erence 3469674 FAIRCHILD SEMICONDUCTOR gy pe Bi syequ74 o0e754e 7 fo IRF6 10-613 MTP2N18/2N20 JT. 34.04 Typical Performance Curves (Cont) Figure 5 Capacitance vs Drain to Source Voltage 10 CCAPACITANCEpF 108 . 5 109 2 8 402 Vos DRAIN TO SOURCE VOLTAGEV Figure 7 Forward Biased Safe Operating Area for MTP2N18/2N20 101 199 REGION MAY BE LIMITED BY Rpston} Ip DRAIN CURRENTA 1 Putin = 25C = 150C 101 102 403 VosDRAIN TO SOURCE VOLTAGEV PCULIIE Figure 9 Forward Biased Safe Operating Area for IRF610-613 AREA IS LIMITED Le 10 = 2 inDRAIN GURRENTA 3 Tc = Ty = 150C MAX 10-1 = G4AKIW 100 101 102 403 VosDRAIN TO SOURCE VOLTAGEV Pozar Za,J TRANSIENT THERMAL RESISTANCECiW Figure 6 Gate to Source Voltage vs Total Gate Charge = = a is a YogGATE TO SOURCE VOLTAGEV > o 2 4 6 6 10 12 Q@,TOTAL GATE CHARGEnC PCIIIOOF Figure 8 Transient Thermal Resistance vs Time for MTP2N18/2N20 101 we ee oa ZaTRANSIENT THERMAL RESISTANCEC/W 3 Duty Factor, D = * : D curves apply lo train of banting pulses Toman = Te Pee & Zou 10-1 a Ce CC) tTIMEme POVICHIE Figure 10 Transient Thermal Resistance for IRF610-613 Pu oe tp ee | -_t t Outy Factor, D = = D curves apply to train ai heating pulses Tyan = To + Pu x Zesc 10-2 10-1 10 101 102 103 iTIMEms FCI2070F 2-155 t t ot Cet tibet,3469674 FAIRCHILD SEMICONDUCTOR 44 DE 34659674 0027943 i 4 IRF610-613 MTP2N18/2N20 39-97 Typical Electrical Characteristics Figure 11 Switching Test Circuit Figure 12 Switching Waveforms Vin Voo al ton r | 1OrF tg(On} torr) e+ A | I | i. PULSE | ey Yo GENERATOR Vour OUTPUT, Your 1 Tr INVERTED } | put % | % | | tr | wale |b | | on I INPUT, Vin 50% 50% { | 10% | Le | 1 PULSE WIOTH-+| ~ CRASOF WFOOGGOF 2-156