Product Datasheet Search Results:
5 Pages, 189 KB, Original- SSM6K202FE
- Toshiba America Electronic Components, Inc.
- 2300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
5 Pages, 190 KB, Original- "SSM6K202FE,LF"
- Toshiba
- Trans MOSFET N-CH Si 30V 2.3A 6-Pin ES T/R
5 Pages, 190 KB, Original- SSM6K202FE,LF
- Toshiba
- Trans MOSFET N-CH Si 30V 2.3A 6-Pin ES T/R
5 Pages, 190 KB, Original- SSM6K202FE,LF(CA
- Toshiba
- Trans MOSFET N-CH Si 30V 2.3A 6-Pin ES T/R
63 Pages, 1628 KB, Original- SSM6K202FE,LF
- Toshiba Semiconductor And Storage
- MOSFET N-CH SGL 30V 2.3A ES6
5 Pages, 242 KB, Original- SSM6K202FE
- Toshiba
- Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: ES6; Number of Pins: 6; V th (V): (min 0.4) (max 1.0); R DS On 0.095 (max 0.145) 0.078 (max 0.101) 0.066 (max 0.085); Drain-Source Voltage (V): (max 30); Drain Current (mA): (max 2300)
Product Details Search Results:
Toshiba.co.jp/SSM6K202FE
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ES6, 2-2N1A, 6 PIN","Terminal Form":"FLAT","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"2.3 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Config...
1428 Bytes - 15:15:36, 28 November 2024
Toshiba.co.jp/"SSM6K202FE,LF"
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b112(V)","Channel Mode":"Enhancement","Power Dissipation":"0.5(W)","Continuous Drain Current":"2.3(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"ES","Rad Hardened":"No","Type":"Small Signal","Pin Count":"6","Number of Elements":"1"}...
1516 Bytes - 15:15:36, 28 November 2024
Toshiba.co.jp/SSM6K202FE,LF
{"Factory Pack Quantity":"4000","Product Category":"MOSFET","Brand":"Toshiba","Packaging":"Reel","RoHS":"Details","Manufacturer":"Toshiba"}...
1149 Bytes - 15:15:36, 28 November 2024
Toshiba.co.jp/SSM6K202FE,LF(CA
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b112(V)","Channel Mode":"Enhancement","Power Dissipation":"0.5(W)","Continuous Drain Current":"2.3(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"ES","Operating Temp Range":"-55C to 150C","Type":"Small Signal","Pin Count":"6","Number of Elements":"1"}...
1512 Bytes - 15:15:36, 28 November 2024
Toshiba.semicon-storage.com/SSM6K202FE,LF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 1.5V Drive","Vgs(th) (Max) @ Id":"1V @ 1mA","Catalog Drawings":"ES6 Top ES6 Side","Package / Case":"SOT-563, SOT-666","Current - Continuous Drain (Id) @ 25\u00b0C":"2.3A (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SSM6K202FE","Rds On (Max) @ Id, Vgs":"85 mOhm @ 1.5A, 4V","Datasheets":"SSM6K202FE - Mosfets Prod Guide","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"30V",...
2084 Bytes - 15:15:36, 28 November 2024
Documentation and Support
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