SSM6K202FE
2014-03-01
1
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K202FE
○ High-Speed Switching Applications
○ Power Management Switch Applications
• 1.8 V drive
• Low ON-resistance: Ron = 145 mΩ (max) (@VGS = 1.8V)
R
on = 101 mΩ (max) (@VGS = 2.5V)
R
on = 85 mΩ (max) (@VGS = 4.0V)
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic Symbol Rating Unit
Drain–source voltage VDS 30 V
Gate–source voltage VGSS ± 12 V
DC ID 2.3
Drain current Pulse IDP 4.6 A
Drain power dissipation PD (Note 1) 500 mW
Channel temperature Tch 150 °C
Storage temperature Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
V (BR) DSS I
D = 1 mA, VGS = 0 30 ⎯ ⎯ V
Drain–source breakdown voltage
V (BR) DSX I
D = 1 mA, VGS = –12 V 18 ⎯ ⎯ V
Drain cutoff current IDSS V
DS = 30 V, VGS = 0 ⎯ ⎯ 1 μA
Gate leakage current IGSS V
GS = ± 12 V, VDS = 0 ⎯ ⎯ ±1 μA
Gate threshold voltage Vth V
DS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V
Forward transfer admittance ⏐Yfs⏐ V
DS = 3 V, ID = 1.5 A (Note2) 3.9 7.8 ⎯ S
ID = 1.5 A, VGS = 4.0 V (Note2) ⎯ 66 85
ID = 1.0 A, VGS = 2.5 V (Note2) ⎯ 78 101
Drain–source ON-resistance RDS (ON)
ID = 0.5 A, VGS = 1.8 V (Note2) ⎯ 95 145
mΩ
Input capacitance Ciss V
DS = 10 V, VGS = 0, f = 1 MHz ⎯ 270 ⎯ pF
Output capacitance Coss V
DS = 10 V, VGS = 0, f = 1 MHz ⎯ 56 ⎯ pF
Reverse transfer capacitance Crss V
DS = 10 V, VGS = 0, f = 1 MHz ⎯ 47 ⎯ pF
Turn-on time ton ⎯ 20 ⎯
Switching time
Turn-off time toff
VDD = 10 V, ID = 2 A,
VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 31 ⎯ ns
Drain–source forward voltage VDSF I
D = − 2.3 A, VGS = 0 V (Note2)
⎯ – 0.85 – 1.2 V
Note 2: Pulse test
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2N1A
Weight: 3 mg (typ.)
ES6
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
Start of commercial production
2006-03
SSM6K202FE
2014-03-01
2
Switching Time Test Circuit
(a) Test Circuit (b) VIN
Marking Equivalent Circuit (top view)
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
6
KL
4
1 2 3
5 4
123
6 5
(c) VOUT
VDD = 10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
VDD
OUT
IN
2.5 V
0
10 μs
RG
tf
ton
90%
10%
2.5 V
0 V
10%
90%
toff
tr
VDD
VDS
(
ON
)
SSM6K202FE
2014-03-01
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ID – VDS
0
4
0 0.2 0.4 0.6 1
3
VGS = 1.5 V
10 V
1
2
1.8 V
2.5 V
0.8
5
RDS (ON) – Ta
0
−50
ID = 1.5 A / VGS = 4.0 V
0 50 150
100
200
300
100
0 2 6 8
4
0
100
200
RDS (ON) – VGS
150
50
1.0 A / 2.5 V
10
ID – VGS
10
0
0.1
1
0.001
0.01
0.0001
2.0
− 25 °C
Ta = 100 °C
25 °C
1.0
Vth – Ta
1.0
0
−50 0 150
0.5
50 100
4.0 V
250
150
50
0.5 A / 1.8 V
VGS = 4.0 V
RDS (ON) – ID
0 1 3 4
2
0
100
200
150
50
5
2.5 V
1.8 V
− 25 °C
Ta = 100 °C
25 °C
Drain–source voltage VDS (V)
Drain current ID (A)
Gate–source voltage VGS (V)
Drain current ID (A)
Common Source
VDS = 3 V
Common Source
Ta = 25°C
ID = 0.5 A
Common Source
Ta = 25°C
Drain current ID (A)
Drain–source ON-resistance
RDS (ON) (mΩ)
Gate–source voltage VGS (V)
Drain–source ON-resistance
RDS (ON) (mΩ)
Common Source
Ta = 25°C
Ambient temperature Ta (°C)
Gate threshold voltage Vth (V)
Ambient temperature Ta (°C)
Drain–source on-resistance
RDS (ON) (mΩ)
Common Source
Common source
VDS = 3 V
ID = 1 mA
SSM6K202FE
2014-03-01
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t – ID
1
0.01
100
0.1
1000
1 10
toff
10
IDR – VDS
|Yfs| – ID
0.1
10
1
10
0.1 1
3
0.3
C – VDS
10
0.1 1 10 100
100
1000
300
500
30
50
Ciss
Coss
Crss
0.01
10
0
0.1
1
0.001
0.01
–0.2 –0.6 –0.4 –1.0–0.8
−25 °C
Ta =100 °C
25 °C
tf
ton
tr
Drain reverse current IDR (A)
Drain–source voltage VDS (V)
Drain current ID (A)
Forward transfer admittance ⎪Yfs⎪ (S)
Common Source
VGS = 0 V
Ta = 25°C
G
D
S
IDR
Common Source
VDS = 3 V
Ta = 25°C
Switching time t (ns)
Drain current ID (A) Drain–source voltage VDS (V)
Capacitance C (pF)
Common Source
Ta = 25°C
f = 1 MHz
VGS = 0 V
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25°C
RG = 4.7 Ω
PD – Ta
800
0
200
120
100 140
400
600
160
1000
80 60 40
20 0 –20 –40
Mounted on an FR4 board
(25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm2)
Ambient temperature Ta (°C)
Drain Power Dissipation PD (mW)
PD – Ta
SSM6K202FE
2014-03-01
5
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in this document, and related hardware, software and systems (collectively "Product") without notice.
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for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
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