SSM6K202FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K202FE High-Speed Switching Applications Power Management Switch Applications * * 1.8 V drive Low ON-resistance: Unit: mm Ron = 145 m (max) (@VGS = 1.8V) Ron = 101 m (max) (@VGS = 2.5V) Ron = 85 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source voltage VGSS 12 V DC ID 2.3 Pulse IDP 4.6 PD (Note 1) 500 Drain current Drain power dissipation A mW Channel temperature Tch 150 C Storage temperature Tstg -55 to 150 C 1, 2, 5, 6 : Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) ES6 3 : Gate 4 : Source JEDEC JEITA TOSHIBA 2-2N1A Weight: 3 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-source breakdown voltage Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 30 V V (BR) DSX ID = 1 mA, VGS = -12 V 18 V VDS = 30 V, VGS = 0 1 A Drain cutoff current IDSS Gate leakage current IGSS VGS = 12 V, VDS = 0 1 A Vth VDS = 3 V, ID = 1 mA 0.4 1.0 V Forward transfer admittance Yfs VDS = 3 V, ID = 1.5 A (Note2) 3.9 7.8 S ID = 1.5 A, VGS = 4.0 V (Note2) 66 85 Drain-source ON-resistance RDS (ON) ID = 1.0 A, VGS = 2.5 V (Note2) 78 101 ID = 0.5 A, VGS = 1.8 V (Note2) 95 145 Gate threshold voltage m Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz 270 pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz 56 pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz 47 pF Switching time Turn-on time ton VDD = 10 V, ID = 2 A, 20 Turn-off time toff VGS = 0 to 2.5 V, RG = 4.7 31 - 0.85 - 1.2 Drain-source forward voltage VDSF ID = - 2.3 A, VGS = 0 V (Note2) ns V Note 2: Pulse test Start of commercial production 2006-03 1 2014-03-01 SSM6K202FE Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 0V RG 0 10 s (c) VOUT VDD VDD = 10 V RG = 4.7 Duty 1% VIN: tr, tf < 5 ns Common Source Ta = 25C Marking 6 90% IN 10% VDD VDS (ON) 10% 90% tr ton tf toff Equivalent Circuit (top view) 5 4 6 5 4 3 1 2 3 KL 1 2 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 SSM6K202FE ID - VDS ID - VGS 5 10 4.0 V 2.5 V Common Source ID 1.8 V 1 3 0.1 Drain current Drain current VDS = 3 V (A) 4 ID (A) 10 V 2 VGS = 1.5 V Ta = 100 C 0.01 1 25 C - 25 C 0.001 Common Source Ta = 25C 0 0 0.2 0.4 0.8 0.6 Drain-source voltage VDS 0.0001 0 1 (V) 1.0 Gate-source voltage RDS (ON) - VGS ID = 0.5 A Common Source Common Source Ta = 25C Drain-source ON-resistance RDS (ON) (m) Drain-source ON-resistance RDS (ON) (m) (V) 200 Ta = 25C 150 100 Ta = 100 C 25 C 50 - 25 C 0 2 6 4 Gate-source voltage 8 VGS 150 100 1.8 V 2.5 V 50 0 10 VGS = 4.0 V 0 1 (V) 3 2 Drain current RDS (ON) - Ta 4 ID 5 (A) Vth - Ta 1.0 300 Vth (V) Common Source 250 200 Gate threshold voltage Drain-source on-resistance RDS (ON) (m) VGS RDS (ON) - ID 200 0 2.0 0.5 A / 1.8 V 150 1.0 A / 2.5 V 100 ID = 1.5 A / VGS = 4.0 V 50 0 -50 0 50 Ambient temperature 100 Ta 0.5 Common source VDS = 3 V ID = 1 mA 0 -50 150 (C) 0 50 Ambient temperature 3 100 Ta 150 (C) 2014-03-01 SSM6K202FE IDR - VDS |Yfs| - ID 10 10 VGS = 0 V (A) IDR 3 Drain reverse current Forward transfer admittance Yfs (S) Common Source 1 0.3 Common Source VDS = 3 V Ta = 25C 0.1 0.01 1 0.1 Drain current ID Ta = 25C 1 IDR G S 0.1 Ta =100 C 25 C 0.01 -25 C 0.001 0 10 D -0.2 (A) -0.4 Drain-source voltage Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25C RG = 4.7 (ns) toff 300 100 tf t Ciss Switching time C (pF) 500 Capacitance (V) 1000 1000 100 30 VDS -1.0 t - ID C - VDS 50 -0.8 -0.6 Common Source Ta = 25C f = 1 MHz VGS = 0 V 10 0.1 Coss Crss 10 ton tr 1 10 Drain-source voltage 1 0.01 100 VDS (V) 0.1 Drain current 1 ID 10 (A) PD - Ta Mounted on an FR4 board 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm ) PD - Ta 800 Drain Power Dissipation PD (mW) 1000 600 400 200 0 -40 -20 0 20 40 60 80 Ambient temperature 100 120 140 160 Ta (C) 4 2014-03-01 SSM6K202FE RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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