SSM6K202FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K202FE High-Speed Switching Applications Unit: mm Power Management Switch Applications * 1.8 V drive * Low ON-resistance: Ron = 145 m (max) (@VGS = 1.8V) Ron = 101 m (max) (@VGS = 2.5V) Ron = 85 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source voltage VGSS 12 V DC ID 2.3 Pulse IDP 4.6 PD (Note 1) 500 mW ES6 Drain current Drain power dissipation 1, 2, 5, 6 : Drain 3 : Gate 4 : Source A Channel temperature Tch 150 C JEDEC Storage temperature Tstg -55 to 150 C JEITA Note 1: Mounted on an FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) 2-2N1A TOSHIBA Weight: 3 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-source breakdown voltage Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 30 V V (BR) DSX ID = 1 mA, VGS = -12 V 18 V Drain cutoff current IDSS VDS = 30 V, VGS = 0 1 A Gate leakage current IGSS VGS = 12 V, VDS = 0 1 A Vth VDS = 3 V, ID = 1 mA 0.4 1.0 V Forward transfer admittance Yfs VDS = 3 V, ID = 1.5 A (Note2) 3.9 7.8 S ID = 1.5 A, VGS = 4.0 V (Note2) 66 85 Drain-source ON-resistance RDS (ON) ID = 1.0 A, VGS = 2.5 V (Note2) 78 101 ID = 0.5 A, VGS = 1.8 V (Note2) 95 145 Gate threshold voltage m Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz 270 pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz 56 pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz 47 pF Switching time Turn-on time ton VDD = 10 V, ID = 2 A, 20 Turn-off time toff VGS = 0 to 2.5 V, RG = 4.7 31 - 0.85 - 1.2 Drain-source forward voltage VDSF ID = - 2.3 A, VGS = 0 V (Note2) ns V Note 2: Pulse test 1 2006-03-28 SSM6K202FE Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 0V RG 0 10 s Marking 10% VDD (c) VOUT VDD VDD = 10 V RG = 4.7 D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25C 6 90% IN VDS (ON) 10% 90% tr ton tf toff Equivalent Circuit (top view) 5 4 6 5 4 3 1 2 3 KL 1 2 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. The VGS recommended voltage for turning on this product is 1.8 V or higher. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2006-03-28 SSM6K202FE ID - VDS ID - VGS 5 4.0 V 2.5 V Common Source VDS = 3 V Drain current ID (A) Drain current ID (A) 10 V 10 4 1.8 V 3 2 VGS = 1.5 V 1 0.1 Ta = 100 C 0.01 1 25 C - 25 C 0.001 Common Source Ta = 25C 0 0 0.4 0.2 0.8 0.6 0.0001 0 1 Drain-source voltage VDS (V) Gate-source voltage VGS (V) RDS (ON) - VGS RDS (ON) - ID 200 200 Common Source Ta = 25C Common Source Drain-source ON-resistance RDS (ON) (m) Drain-source ON-resistance RDS (ON) (m) ID = 0.5 A Ta = 25C 150 100 Ta = 100 C 25 C 50 - 25 C 0 0 2 6 4 8 150 100 2.5 V 50 0 10 1.8 V VGS = 4.0 0 1 Gate-source voltage VGS (V) RDS (ON) - Ta 4 5 Vth - Ta 1.0 (V) Common Source Gate threshold voltage Vth 250 200 0.5 A / 1.8 V 150 1.0 A / 2.5 V 100 ID = 1.5 A / VGS = 4.0 V 50 0 -50 3 2 Drain current ID (A) 300 Drain-source on-resistance RDS (ON) (m) 2.0 1.0 0 50 Ambient temperature 100 Ta 0.5 Common source VDS = 3 V ID = 1 mA 0 -50 150 (C) 0 50 Ambient temperature 3 100 Ta 150 (C) 2006-03-28 SSM6K202FE IDR - VDS |Yfs| - ID 10 10 VGS = 0 V (A) 3 Drain reverse current IDR Forward transfer admittance Yfs (S) Common Source 1 0.3 Common Source VDS = 3 V Ta = 25C 0.1 0.01 1 0.1 Drain current ID IDR G S 0.1 Ta =100 C 25 C 0.01 -25 C -0.2 (A) -0.4 -0.6 -0.8 -1.0 Drain-source voltage VDS (V) C - VDS 1000 1 0.001 0 10 D Ta = 25C t - ID 1000 Common Source (ns) 300 100 30 Common Source Ta = 25C Coss Crss f = 1 MHz VGS = 0 V 10 Ta = 25C RG = 4.7 tf t Ciss 100 50 VDD = 10 V VGS = 0 to 2.5 V toff Switching time Capacitance C (pF) 500 ton tr 10 0.1 1 10 1 0.01 100 Drain-source voltage VDS (V) 0.1 1 Drain current ID 10 (A) PD - Ta Drain Power Dissipation PD (mW) 1000 Mounted on an FR4 board 2 (25.4 x 25.4 x 1.6 mm P Cu Pad - T: 645 mm ) D a 800 600 400 200 0 -40 -20 0 20 40 60 80 Ambient temperature 100 120 140 Ta 160 (C) 4 2006-03-28 SSM6K202FE 5 2006-03-28