Product Datasheet Search Results:

2SA1943.pdf6 Pages, 177 KB, Original
2SA1943
Fairchild Semiconductor
PNP Epitaxial Silicon Transistor
2SA1943OTU.pdf6 Pages, 468 KB, Original
2SA1943OTU
Fairchild
TRANS PNP 250V 17A TO264 - 2SA1943OTU
2SA1943RTU.pdf6 Pages, 468 KB, Original
2SA1943RTU
Fairchild
TRANS PNP 250V 17A TO264 - 2SA1943RTU
2SA1943.pdf1 Pages, 92 KB, Original
2SA1943
Micro Commercial Components
TRANS GP BJT PNP 230V 15A 3TO-3PL
2SA1943.pdf2 Pages, 146 KB, Scan
2SA1943
N/a
Silicon PNP Transistor
2SA1943OTU.pdf7 Pages, 329 KB, Original
2SA1943OTU
Aptina Imaging
Trans GP BJT PNP 250V 17A 150000mW 3-Pin(3+Tab) TO-264 Tube
2SA1943RTU.pdf7 Pages, 329 KB, Original
2SA1943RTU
Aptina Imaging
Trans GP BJT PNP 250V 17A 150000mW 3-Pin(3+Tab) TO-264 Tube
2SA1943.pdf5 Pages, 137 KB, Original
2SA1943N(S1,E,S).pdf6 Pages, 157 KB, Original
2SA1943N(S1,E,S)
Toshiba
Trans GP BJT PNP 230V 15A 150000mW 3-Pin(3+Tab) TO-3PN Magazine
2SA1943-O.pdf5 Pages, 125 KB, Original
2SA1943-O
Toshiba
TRANS PNP -230V -15A TO-3PL - 2SA1943-O
2SA1943O.pdf4 Pages, 186 KB, Scan
2SA1943O
Toshiba
Silicon PNP Triple Diffused Transistor
2SA1943-O(O).pdf20 Pages, 176 KB, Original

Product Details Search Results:

Fairchildsemi.com/2SA1943OTU
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"17A","Online Catalog":"PNP Transistors","Mounting Type":"Through Hole","Transistor Type":"PNP","Frequency - Transition":"30MHz","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"3V @ 800mA, 8A","Current - Collector Cutoff (Max)":"5\u00b5A (ICBO)","Series":"-","PCN Packaging":"Tape and Box/Reel Barcode Update 07/Aug/2014","Voltage - Collector Emitter Breakdown (Max)":"250V","Datasheets":"2SA1943/FJL4215","Pac...
1841 Bytes - 20:46:08, 19 December 2024
Fairchildsemi.com/2SA1943RTU
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"17A","Frequency - Transition":"30MHz","Transistor Type":"PNP","Product Photos":"2SA1943RTU","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"3V @ 800mA, 8A","Series":"-","Package / Case":"TO-264-3, TO-264AA","Voltage - Collector Emitter Breakdown (Max)":"250V","Power - Max":"150W","Packaging":"Tube","Datasheets":"2SA1943/FJL4215","Current - Collector Cutoff (Max)":"-","Supplier Device Package":"TO-264","Sta...
1663 Bytes - 20:46:08, 19 December 2024
N_a/2SA1943
{"Category":"PNP Transistor, Transistor","Amps":"15A","MHz":"25 MHz","Volts":"230V"}...
517 Bytes - 20:46:08, 19 December 2024
Onsemi.com/2SA1943OTU
{"Collector Current (DC) ":"17(A)","Transistor Polarity":"PNP","Operating Temperature Classification":"Automotive","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Category ":"Bipolar Power","Packaging":"Rail/Tube","Power Dissipation":"150(W)","Operating Temp Range":"-50C to 150C","Frequency":"30(MHz)","Package Type":"TO-264","Collector-Base Voltage":"250(V)","DC Current Gain":"80","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3 +Tab","Number of Elements"...
1581 Bytes - 20:46:08, 19 December 2024
Onsemi.com/2SA1943RTU
{"Collector Current (DC) ":"17(A)","Configuration":"Single","Transistor Polarity":"PNP","Category ":"Bipolar Power","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Operating Temp Range":"-50C to 150C","Packaging":"Rail/Tube","Operating Temperature Classification":"Automotive","Rad Hardened":"No","Frequency":"30(MHz)","Output Power":"Not Required(W)","Collector-Base Voltage":"250(V)","DC Current Gain":"55@1A@5V","Package Type":"TO-264","Power Dissipation":"150(W)","Pin Count":"3 +Tab","Number of Ele...
1587 Bytes - 20:46:08, 19 December 2024
Toshiba.co.jp/2SA1943
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-21F1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"35","Collector-emitter Voltage-Max":"230 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"30 MHz","Collector Current-Max (IC)":"15 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"PNP",...
1380 Bytes - 20:46:08, 19 December 2024
Toshiba.co.jp/2SA1943N(S1,E,S)
{"Emitter- Base Voltage VEBO":"- 5 V","Gain Bandwidth Product fT":"30 MHz","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"PNP","Minimum Operating Temperature":"- 55 C","DC Collector/Base Gain hfe Min":"35","DC Current Gain hFE Max":"160","Collector-Emitter Saturation Voltage":"-1.1 V","Collector- Emitter Voltage VCEO Max":"- 230 V","Packaging":"Reel","Collector- Base Voltage VCBO":"- 230 V","Mounting Style":"Through Hole","Pd - Power Dissipation":"150 W","Package / Case":"TO-3P-3","Ma...
1796 Bytes - 20:46:08, 19 December 2024
Toshiba.co.jp/2SA1943-O
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEAD FREE, 2-21F1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"80","Collector-emitter Voltage-Max":"230 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"30 MHz","Collector Current-Max (IC)":"15 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polar...
1400 Bytes - 20:46:08, 19 December 2024
Toshiba.co.jp/2SA1943O
{"V(CE)sat Max.(V)":"3.0","Absolute Max. Power Diss. (W)":"150","V(BR)CBO (V)":"230","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"80","I(C) Abs.(A) Collector Current":"15","h(FE) Max. Current gain.":"160","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"5.0u","@V(CBO) (V) (Test Condition)":"230","Package":"TO-264AA","f(T) Min. (Hz) Transition Freq":"30M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"800m","V(BR)CEO (V)":"230","Military":"N","@I(C) (A) (Tes...
1015 Bytes - 20:46:08, 19 December 2024
Toshiba.co.jp/2SA1943-O(O)
837 Bytes - 20:46:08, 19 December 2024
Toshiba.co.jp/2SA1943-O(Q)
{"Emitter- Base Voltage VEBO":"5 V","Gain Bandwidth Product fT":"30 MHz","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"PNP","Factory Pack Quantity":"100","DC Collector/Base Gain hfe Min":"80","Maximum DC Collector Current":"15 A","Mounting Style":"Through Hole","Collector- Emitter Voltage VCEO Max":"230 V","Packaging":"Reel","Collector- Base Voltage VCBO":"230 V","Minimum Operating Temperature":"- 55 C","Pd - Power Dissipation":"150000 mW","Package / Case":"TO-3P","Configuration":"Si...
1660 Bytes - 20:46:08, 19 December 2024
Toshiba.co.jp/2SA1943-OQ
819 Bytes - 20:46:08, 19 December 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
2SA1943.pdf0.131Request