TOSHIBA 2SA1943 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SA1943 POWER AMPLIFIER APPLICATIONS Unit in mm 20.5MAX. |, $3.3 0.2 | 2 Complementary to 28C5200 1 -|* iz @ Recommended for 100W High Fidelity Audio Frequency = 3 Oo nN Amplifier Output Stage. ni f n = MAXIMUM RATINGS (Ta =25C) o +i CHARACTERISTIC SYMBOL | RATING | UNIT S Collector-Base Voltage VCBO 230 Vv 5.45 40.15 545 40.15 Collector-Emitter Voltage VCEO 230 Vv Emitter-Base Voltage VEBO 5 Vv a5 g Collector Current Ic 15 A *e I Base Current Ip 1.5 A f Collector Power Dissipation Pq 150 Ww 1 BASE (Te= 25C) 2. COLLECTOR (HEAT SINK) Junction Temperature Tj 150 C 3. EMITTER Storage Temperature Range Tstg 55~150 C JEDEC _ EIAJ TOSHIBA = 2-21F1A ELECTRICAL CHARACTERISTICS (Ta = 25C) Weight : 9.75g (Typ.) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current ICBO Vcp= 230V, Iz=0 | 5.0] pwA Emitter Cut-off Current IkBO VEB= 5V, Ic=0 | -5.0] A Collector-Emitter Breakdown Voltage V (BR) CEO |Ic= 50mA, Ip=0 230|; Vv hFE (1) oe In =-1A _ 1 DC Current Gain (Note) VCE=8V, Ic 5 60 hrgp(2) | VcR=5V, Ic=-7A 35 60); Collector-Emitter Saturation Voltage VCE (sat) |Ic=8A, Ip=0.8A | -15] -3.0] V Base-Emitter Voltage VBE VcE=5V, Ic=-7A | -1.0] -1.5|] V Transition Frequency ft VcE=5V, Ic=-1A 30) | MHz Collector Output Capacitance | Cob Vcp=10V, Ip=0, f=1MHz 360 | pF Note : hrR (1) Classification R:55~110, O : 80~160 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-05-06 1/2 TOSHIBA Ic - VCE MMON EMITTER a c= 25C 2 Be a BQ food me 5 5 6 3 B Q <a} wt Qo oO 0 -2 4 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE Veg () VCE (sat) - Ic VCE (sat) Te=100C 25 VOLTAGE COMMON EMITTER I/Ip=10 0.01 -0.1 -1 10 100 COLLECTOR-EMITTER SATURATION COLLECTOR CURRENT Ic (A) SAFE OPERATING AREA 50 Hig) MAX. (PULSED) XX . % 8077 MAX. No | (CONTINUOUS) N N L-10msix z -10 = F SS \, \ 100ms 2 -5 7 aN \ & -3>7-DC OPERATION 7\ t \ a Lt T.= 25C \NIIN fe \ E \ 5B -l = \ 05 \ 2 03 \ 3 0 | & SINGLE \ 8 NONREPETITIVE PULSE Te=25C -0.1] CURVES MUST BE DERATED LINEARLY _0.95| WITH INCREASE IN Vong MAX TEMPERATURE. ott -0.08 3 -10 30 100 -300 1000 COLLECTOR-EMITTER VOLTAGE VoR (V) Iq (A) COLLECTOR CURRENT DC CURRENT GAIN hrg 2SA1943 Ic VBE MMON EMITTER CE=-5V Te= 100C 0 0.4 -0.8 12 -1.6 2.0 BASE-EMITTER VOLTAGE VpE (V) hFE Ic 300 Tc= 100C 100 30 10 3 COMMON EMITTER VcoR=5V 0.01 0.1 -1 -10 100 COLLECTOR CURRENT Ic (A) 1997-05-06 2/2