2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SA1943/FJL4215 Rev. C 1
January 2009
2SA1943/FJL4215
PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
Features
• High Current Capability: IC = -17A.
• High Power Dissipation : 150watts.
• High Frequency : 30MHz.
• High Voltage : VCEO= -250V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SC5200/FJL4315.
• Full thermal and electrical Spice models are available.
• Same transistor is also available in:
-- TO3P package, 2SA1962/FJA4213 : 130 watts
-- TO220 package, FJP1943 : 80 watts
-- TO220F package, FJPF1943 : 50 watts
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta=25°C unless otherwise noted
* Device mounted on min imu m pad size
hFE Classification
Symbol Parameter Ratings Units
BVCBO Collector-Base Voltage -250 V
BVCEO Collector-Emitter Voltage -250 V
BVEBO Emitter-Base Voltage -5 V
ICCollector Current -17 A
IBBase Current -1.5 A
PDTotal Device Dissipation(TC=25°C)
Derate above 25°C150
1.04 W
W/°C
TJ, TSTG Junction and Storage Temperature - 50 ~ +150 °C
Symbol Parameter Max. Units
RθJC Thermal Resistance, Junction to Case 0.83 °C/W
Classification R O
hFE1 55 ~ 110 80 ~ 160
1.Base 2.Collector 3.Emitter
1TO-264
2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SA1943/FJL4215 Rev. C 2
Electrical Characteristics* Ta=25°C unless otherwise noted
* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%
Ordering Information
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=-5mA, IE=0 -250 V
BVCEO Collector-Emitter Breakdown Voltage IC=-10mA, RBE=∞-250 V
BVEBO Emitter-Base Breakdown Voltage IE=-5mA, IC=0 -5 V
ICBO Collector Cut-off Current VCB=-230V, IE=0 -5.0 µA
IEBO Emitter Cut-off Current VEB=-5V, IC=0 -5.0 µA
hFE1 DC Current Gain VCE=-5V, IC=-1A 55 160
hFE2 DC Current Gain VCE=-5V, IC=-7A 35 60
VCE(sat) Collector-Emitter Saturation Voltage IC=-8A, IB=-0.8A -0.4 -3.0 V
VBE(on) Base-Emitter On Voltage VCE=-5V, IC=-7A -1.0 -1.5 V
fTCurrent Gain Bandwidth Product VCE=-5V, IC=-1A 30 MHz
Cob Output Capacitance VCB=-10V, f=1MHz 360 pF
Part Number Marking Package Packing Method Remarks
2SA1943RTU A1943R TO-264 TUBE hFE1 R grade
2SA1943OTU A1943O TO-264 TUBE hFE1 O grade
FJL4215RTU J4215R TO-264 TUBE hFE1 R grade
FJL4215OTU J4215O TO-264 TUBE hFE1 O grade
2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SA1943/FJL4215 Rev. C 3
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain ( R Grade )
Figure 3. DC current Gain ( O Grade ) Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage
-0 -2 -4 -6 -8 -10
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
IB = -500mA
IB = -600mA
I
B
= -400mA
IB = -700mA
IB = -300mA
IB = -900mA
IB = -200mA
IB = -800mA
IB = -1A
IB = -100mA
IC[mA], COLLECTOR CURRENT
VCE[V], COLL ECT OR- E MITT ER VOL T AGE
0.1 1 10
1
10
100
VCE = -5V
Tj = -25oC
Tj = 25oC
Tj = 125oC
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
1
10
100
VCE = -5V
Tj = -25oC
Tj = 25oC
Tj = 125oC
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT 0.1 1 10
10
100
1000
10000 Ic=-10Ib
Tj=-25oC
Tj=25oC
Tj=125oC
Vce(sat)[mV], SATURATION VOLTAGE
Ic[A], C OLL EC T OR CU RREN T
0.1 1 10
100
1000
10000
Ic=-10Ib
Tj=-25oCTj=25oC
Tj=125oC
Vbe(sat)[mV], SATURATION VOLTAGE
Ic[A], C OLL EC T OR CU RREN T
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
0
2
4
6
8
10
12
14
VCE = 5V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SA1943/FJL4215 Rev. C 4
Typical Characteristics
Figure 7. Thermal Resistance Figure 8. Safe Operating Area
Figure 9. Power Derating
1E-6 1E-5 1E-4 1E-3 0.01 0.1 1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Transient Thermal Resistance, Rthjc[oC / W]
Pulse duration [sec]
110100
0.01
0.1
1
10
100
*SING LE NONREPETITIVE
PULSE TC=25[oC]
10ms*
100ms*
DC
IC MAX. (Pulsed*)
IC MAX. (DC)
IC [A], COLLECTOR CURRENT
VCE [V], C OLL E CT OR-E MITT ER V OLT A GE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
PC[W], POWER DISSI PA TION
TC[oC], CASE TEMPERATURE
2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SA1943/FJL4215 Rev. C 5
Package Dimensions
5.45TYP
[5.45
±0.30
]5.45TYP
[5.45
±0.30
]
4.90
±0.20
20.00
±0.20
(8.30) (8.30) (1.00)
(0.50)
(2.00
)
(7.00)
(R1.00)
(R2.00)
ø3.30
±0.20
(7.00)
(1.50)
(1.50) (1.50)
2.50
±0.20
3.00
±0.20
2.80
±0.3
0
1.00
+0.25
–0.10
0.60
+0.25
–0.10
1.50
±0.20
6.00
±0.20
20.00
±0.20
20.00
±0.50
5.00
±0.20
3
.50
±0.20
2.50
±0.10
(9.00)
(9.00)
(2.00)
(
1.50)
(0.15)
(
2.80) (4.00)
(11.00)
TO-264
Dimensions in Millimeters
2SA1943/FJL4215 PNP Epitaxial Silicon Transistor2SA1943/FJL4215
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SA1943/FJL4215 Rev. C 6
