MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1943 Features * * * PNP Silicon Power Transistors Silicon PNP triple diffused type Complementary to 2SC5200 Recommended for 100W high fidelity audio frequency amplifier output stage Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 230 230 5.0 15 150 -55 to +150 -55 to +150 Unit V V V A W O C O C TO-3PL Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max 1 Units OFF CHARACTERISTICS V (BR)CEO ICBO IEBO Collector-Emitter Breakdown Voltage (IC=50mAdc, IB =0) Collector-Base Cutoff Current (VCB=230Vdc,IE =0) Emitter-Base Cutoff Current (VEB =5.0Vdc, IC=0) 230 --- Vdc --- 5.0 uAdc --- 5.0 uAdc ON CHARACTERISTICS hFE-1 hFE-2 V CE(s at) V BE(sat) Forward Current Transfer ratio (IC=1.0Adc, V CE=5.0Vdc) Forward Current Transfer ratio (IC=7.0Adc, V CE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=8.0Adc, IB =0.8Adc) Base-Emitter Saturation Voltage (IC=7.0Adc,VCE=5.0Vdc) 55 160 --- 35 --- --- --- 3.0 Vdc --- 1.5 Vdc 2 PIN 1. PIN 2. PIN 3. 3 BASE COLLECTOR ( HEAT SINK ) EMITTER DIMENSIONS DIM A B C D E F G H I J K L M N O P Q INCHES MIN --.098 .098 .118 .039 .209 .020 .209 .126 .157 .079 .236 .433 .110 1.004 .764 --- MAX .807 .051 .220 .033 .220 .142 1.043 .811 .205 MM MIN --2.50 2.50 3.00 .75 5.30 .50 5.30 3.20 4.00 2.00 6.00 11.00 2.80 25.50 19.40 --- MAX 20.50 1.30 5.60 .85 5.60 3.60 NOTE 26.50 20.60 5.20 www.mccsemi.com Revision: 2 2003/04/30