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2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor

2SA1943/FJL4215 Rev. C 1

January 2009

2SA1943/FJL4215

PNP Epitaxial Silicon Transistor

Applications

• High-Fidelity Audio Output Amplifier

• General Purpose Power Amplifier

Features

• High Current Capability: IC = -17A.

• High Power Dissipation : 150watts.

• High Frequency : 30MHz.

• High Voltage : VCEO= -250V

• Wide S.O.A for reliable operation.

• Excellent Gain Linearity for low THD.

• Complement to 2SC5200/FJL4315.

• Full thermal and electrical Spice models are available.

• Same transistor is also available in:

-- TO3P package, 2SA1962/FJA4213 : 130 watts

-- TO220 package, FJP1943 : 80 watts

-- TO220F package, FJPF1943 : 50 watts

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

* These ratings ar e limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* Ta=25°C unless otherwise noted

* Device mounted on min imu m pad size

hFE Classification

Symbol Parameter Ratings Units

BVCBO Collector-Base Voltage -250 V

BVCEO Collector-Emitter Voltage -250 V

BVEBO Emitter-Base Voltage -5 V

ICCollector Current -17 A

IBBase Current -1.5 A

PDTotal Device Dissipation(TC=25°C)

Derate above 25°C150

1.04 W

W/°C

TJ, TSTG Junction and Storage Temperature - 50 ~ +150 °C

Symbol Parameter Max. Units

RθJC Thermal Resistance, Junction to Case 0.83 °C/W

Classification R O

hFE1 55 ~ 110 80 ~ 160

1.Base 2.Collector 3.Emitter

1TO-264

2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor

2SA1943/FJL4215 Rev. C 2

Electrical Characteristics* Ta=25°C unless otherwise noted

* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%

Ordering Information

Symbol Parameter Test Condition Min. Typ. Max. Units

BVCBO Collector-Base Breakdown Voltage IC=-5mA, IE=0 -250 V

BVCEO Collector-Emitter Breakdown Voltage IC=-10mA, RBE=∞-250 V

BVEBO Emitter-Base Breakdown Voltage IE=-5mA, IC=0 -5 V

ICBO Collector Cut-off Current VCB=-230V, IE=0 -5.0 µA

IEBO Emitter Cut-off Current VEB=-5V, IC=0 -5.0 µA

hFE1 DC Current Gain VCE=-5V, IC=-1A 55 160

hFE2 DC Current Gain VCE=-5V, IC=-7A 35 60

VCE(sat) Collector-Emitter Saturation Voltage IC=-8A, IB=-0.8A -0.4 -3.0 V

VBE(on) Base-Emitter On Voltage VCE=-5V, IC=-7A -1.0 -1.5 V

fTCurrent Gain Bandwidth Product VCE=-5V, IC=-1A 30 MHz

Cob Output Capacitance VCB=-10V, f=1MHz 360 pF

Part Number Marking Package Packing Method Remarks

2SA1943RTU A1943R TO-264 TUBE hFE1 R grade

2SA1943OTU A1943O TO-264 TUBE hFE1 O grade

FJL4215RTU J4215R TO-264 TUBE hFE1 R grade

FJL4215OTU J4215O TO-264 TUBE hFE1 O grade

2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor

2SA1943/FJL4215 Rev. C 3

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain ( R Grade )

Figure 3. DC current Gain ( O Grade ) Figure 4. Collector-Emitter Saturation Voltage

Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage

-0 -2 -4 -6 -8 -10

-2

-4

-6

-8

-10

-12

-14

-16

-18

-20

IB = -500mA

IB = -600mA

= -400mA

IB = -700mA

IB = -300mA

IB = -900mA

IB = -200mA

IB = -800mA

IB = -1A

IB = -100mA

IC[mA], COLLECTOR CURRENT

VCE[V ], C OLLE CTOR-EM ITTER VOLTAGE

0.1 1 10

100

VCE = -5V

Tj = -25oC

Tj = 25oC

Tj = 125oC

hFE, DC CURRENT GAIN

IC[A], COLLECTOR CURRENT

0.1 1 10

100

VCE = -5V

Tj = -25oC

Tj = 25oC

Tj = 125oC

hFE, DC CURRENT GAIN

IC[A], COLLECTOR CURRENT 0.1 1 10

100

1000

10000 Ic=-10Ib

Tj=-25oC

Tj=25oC

Tj=125oC

Vce(sat)[mV], SATURATION VOLTAGE

Ic[A], C OLL E CTOR CU RR EN T

0.1 1 10

100

1000

10000

Ic=-10Ib

Tj=-25oCTj=25oC

Tj=125oC

Vbe(sat)[mV], SATURATION VOLTAGE

Ic[A], C OLL E CTOR CU RR EN T

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

VCE = 5V

IC[A], COLLECTOR CURRENT

VBE[V], BASE-EMITTER VOLTAGE

2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor

2SA1943/FJL4215 Rev. C 4

Typical Characteristics

Figure 7. Thermal Resistance Figure 8. Safe Operating Area

Figure 9. Power Derating

1E-6 1E-5 1E-4 1E-3 0.01 0.1 1

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Transient Thermal Resistance, Rthjc[oC / W]

Pulse duration [sec]

110100

0.01

0.1

100

*SINGLE NONREPETITIVE

PULSE TC=25[oC]

10ms*

100ms*

IC MAX . (Pulsed*)

IC MAX. (DC)

IC [A], COLLECTOR CURRENT

VCE [V ], C OLLEC T OR -E MITT E R VO L TAGE

0 25 50 75 100 125 150 175

100

120

140

160

PC[W], POWER DISSI PA TION

TC[oC], CASE TEMPERATURE

5.20

4.80

0.15

3.70

3.30

20.20

19.80

3.50

3.10

1.25

0.90

2.70

2.30

20.50

19.50

6.20

5.80

20.20

19.80

1.00

9.10

8.90

1.70

1.30

3.20

2.80

5.75

5.15

5.75

5.15

1.00

4.05

0.50

2.00

0.254

A B

0.254

A B

5.20

4.80

3.10

2.50

0.85

0.50

1.50

2.00

18.30

17.70

21.62

21.02

7.40

7.00

2.60

2.40

16.60

12.00

1.20

0.80

1.50 1.50

NOTES:

A. PACKAGE REFERENCE: JEDEC TO264

VARIATION AA.

B. ALL DIMENSIONS ARE IN MILLIMETERS.

OUT OF JEDEC STANDARD VALUE.

D. DIMENSION AND TOLERANCE AS PER ASME

Y14.5-1994.

E. DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR PROTRUSIONS.

F. THIS PACKAGE IS INTENDED ONLY FOR

"FS PKG CODE AR"

G. DRAWING FILE NAME: TO264A03REV2

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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