Product Datasheet Search Results:
- 2SA1162
- Galaxy Semi-conductor Holdings Limited
- Silicon Epitaxial Planar Transistor
- 2SA1162-GR-TP
- Micro Commercial Components Corp.
- 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
- 2SA1162-O-TP
- Micro Commercial Components Corp.
- 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
- 2SA1162-TP
- Micro Commercial Components Corp.
- 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
- 2SA1162-Y-TP
- Micro Commercial Components Corp.
- 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
- 2SA1162GT1
- On Semiconductor
- TRANSISTOR PNP 50V 150MA SC-59 - 2SA1162GT1
- 2SA1162YT1
- On Semiconductor
- TRANSISTOR PNP 50V 150MA SC-59 - 2SA1162YT1
Product Details Search Results:
Mccsemi.com/2SA1162-GR-TP
{"Terminal Finish":"MATTE TIN","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Collector Current-Max (IC)":"0.1500 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"50 V","Terminal Position":"DUAL","Surface Mount":"Yes","Mfr Pac...
1465 Bytes - 19:52:22, 29 December 2024
Mccsemi.com/2SA1162-O-TP
{"Terminal Finish":"MATTE TIN","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Collector Current-Max (IC)":"0.1500 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"50 V","Terminal Position":"DUAL","Surface Mount":"Yes","Mfr Pac...
1458 Bytes - 19:52:22, 29 December 2024
Mccsemi.com/2SA1162-TP
{"Terminal Finish":"MATTE TIN","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Collector Current-Max (IC)":"0.1500 A","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"50 V","Terminal Position":"DUAL","Surface Mount":"Y...
1440 Bytes - 19:52:22, 29 December 2024
Mccsemi.com/2SA1162-Y-TP
{"Terminal Finish":"MATTE TIN","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Collector Current-Max (IC)":"0.1500 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"50 V","Terminal Position":"DUAL","Surface Mount":"Yes","Mfr Pac...
1461 Bytes - 19:52:22, 29 December 2024
N_a/2SA1162
{"Category":"PNP Transistor, Transistor","Amps":"0.15A","MHz":">80 MHz","Volts":"50V"}...
523 Bytes - 19:52:22, 29 December 2024
Onsemi.com/2SA1162GT1
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"150mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"200 @ 2mA, 6V","Transistor Type":"PNP","Product Photos":"SOT-23-3","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"300mV @ 10mA, 100mA","Current - Collector Cutoff (Max)":"100nA","Series":"-","Standard Package":"3,000","Voltage - Collector Emitter Breakdown (Max)":"50V","Supplier Device Package":"SC-59","Packaging":"Tape & Reel (TR)","Datasheets":"2SA1162GT1,...
1596 Bytes - 19:52:22, 29 December 2024
Onsemi.com/2SA1162YT1
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"150mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"120 @ 2mA, 6V","Transistor Type":"PNP","Product Photos":"SOT-23-3","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"300mV @ 10mA, 100mA","Current - Collector Cutoff (Max)":"100nA","Series":"-","Standard Package":"3,000","Voltage - Collector Emitter Breakdown (Max)":"50V","Supplier Device Package":"SC-59","Packaging":"Tape & Reel (TR)","Datasheets":"2SA1162GT1,...
1596 Bytes - 19:52:22, 29 December 2024
Toshiba.co.jp/2SA1162
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-3F1A, SC-59, TO-236MOD, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"70","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","...
1452 Bytes - 19:52:22, 29 December 2024
Toshiba.co.jp/2SA1162BL
{"V(CE)sat Max.(V)":"300m","Absolute Max. Power Diss. (W)":"150m","V(BR)CBO (V)":"50","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"350","I(C) Abs.(A) Collector Current":"150m","h(FE) Max. Current gain.":"700","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"50","Package":"SOT-23","f(T) Min. (Hz) Transition Freq":"80M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"10m","V(BR)CEO (V)":"50","Military":"N","@I(C) (A) (Test ...
1020 Bytes - 19:52:22, 29 December 2024
Toshiba.co.jp/2SA1162-GR
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-3F1A, SC-59, TO-236MOD, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.1500 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"80 MHz","Number of Elements":"1","Transistor Element Material":"SILICON",...
1471 Bytes - 19:52:22, 29 December 2024
Toshiba.co.jp/2SA1162GR
{"V(CE)sat Max.(V)":"300m","Absolute Max. Power Diss. (W)":"150m","V(BR)CBO (V)":"50","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"200","I(C) Abs.(A) Collector Current":"150m","h(FE) Max. Current gain.":"400","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"50","Package":"SOT-23","f(T) Min. (Hz) Transition Freq":"80M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"10m","V(BR)CEO (V)":"50","Military":"N","@I(C) (A) (Test ...
1020 Bytes - 19:52:22, 29 December 2024
Toshiba.co.jp/2SA1162-GR(F)
{"Collector Current (DC) ":"0.15 A","Transistor Polarity":"PNP","Collector Current (DC) (Max)":"0.15 A","Collector-Emitter Voltage":"50 V","Mounting":"Surface Mount","Emitter-Base Voltage":"5 V","Category ":"Bipolar Small Signal","Operating Temperature Classification":"Military","Power Dissipation":"0.15 W","Operating Temp Range":"-55C to 125C","Frequency":"80 MHz","Package Type":"SMini","Collector-Base Voltage":"50 V","Rad Hardened":"No","DC Current Gain":"200","Pin Count":"3","Number of Elements":"1"}...
1538 Bytes - 19:52:22, 29 December 2024
Documentation and Support
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