PNP Silicon
Plastic-Encapsulate
Transistor
Features
• Capable of 0.15Watts of Power Dissipation.
• Collector-current: 0.15A
• Collector-base Voltage: -50V
• Operating and storage junction temperature range: -55к to +150к
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=-1mAdc, IB=0) -50 --- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=-100uAdc, IE=0) -50 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=-100uAdc, IC=0) -5 --- Vdc
ICBO Collector Cutoff Current
(VCB=-50Vdc, IE=0) --- -0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=-5.0Vdc, IC=0) --- -0.1 uAdc
ON CHARACTERISTICS
hFE DC Current Gain
(IC=-2.0mAdc, VCE=-6.0Vdc) 70 400 ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=-100mAdc, IB=-10mAdc) --- -0.3 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Transistor Frequency
(IC=-1.0mAdc, VCE=-10Vdcz) 80 --- MHz
Cob Collector Output Capacitance
(VCB=-10Vdc, IE=0, f=1MHz) --- 7 pF
NF Noise Figure
(VCE=-6Vdc, IC=0.1mA, f=1KHz, Rg=10K¡)--- 10 dB
CLASSIFICATION OF HFE (1)
Rank O Y GR
Range 70-140 120-240 200-400
Marking SO SY SG
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: B 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .104 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
A
B
C
D
E
F
GH
.079
2.000 in
h
mm
.
1
.800
.035
.900
.
7
.950
.037
.950
E
B
C
2SA1162-O
2SA1162-Y
2SA1162-GR
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Halogen free available upon request by adding suffix "-HF"
•