BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SA1162
Document number: BL/SSSTC0092 www.galaxycn.com
Rev.A 2
Parameter Symbol Test conditions MIN
TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 B-50 V
Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5
V
Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 μA
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA
DC current gain hFE VCE=-6V,IC=-2mA 70 400
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA B -0.3 V
Transition frequency fTVCE=-10V, IC=-1mA 80 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 7 pF
Noise figure NF
VCE=-6V,IC=0.1mA,
f=1MHz,Rg=10kΩ 10 dB
CLASSIFICATION OF hFE(1)
Rank O Y G
Range 70-140 120-240 200-400