Product Datasheet Search Results:

2N5912.pdf2 Pages, 35 KB, Original
2N5912
Calogic, Llc
2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-78
CA2N5912H.pdf2 Pages, 183 KB, Scan
CA2N5912H
Calogic
Wideband Matched Dual N-Channel JFETS
CA2N5912X.pdf2 Pages, 183 KB, Scan
CA2N5912X
Calogic
Wideband Matched Dual N-Channel JFETS
X2N5912.pdf2 Pages, 53 KB, Scan
X2N5912
Calogic, Llc
2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
2N5912.pdf1 Pages, 62 KB, Original
2N5912
Interfet Corporation
Dual N-Channel silicon junction field-effect transistor
2N5912.pdf1 Pages, 51 KB, Scan
2N5912/D.pdf2 Pages, 70 KB, Scan
2N5912/D
Intersil Corporation
Dual N-channel JFET. High frequency amplifier.
2N5912_D.pdf2 Pages, 70 KB, Scan
2N5912_D
Intersil Corporation
Dual N-channel JFET. High frequency amplifier.
2N5912/W.pdf2 Pages, 70 KB, Scan
2N5912/W
Intersil Corporation
Dual N-channel JFET. High frequency amplifier.
2N5912_W.pdf2 Pages, 70 KB, Scan
2N5912_W
Intersil Corporation
Dual N-channel JFET. High frequency amplifier.
2N5912.pdf1 Pages, 275 KB, Original
2N5912
Linear Integrated Systems, Inc.
2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET
2N5912C.pdf1 Pages, 275 KB, Original
2N5912C
Linear Integrated Systems, Inc.
2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET

Product Details Search Results:

Calogic.net/2N5912
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED PACKAGE-7","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","Transistor Application":"AMPLIFIER","Channel Type":"N-CHANNEL","Operating Mode":"DEPLETION","Feedback Cap-Max (Crss)":"1.2 pF","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transis...
1325 Bytes - 16:00:11, 25 December 2024
Calogic.net/CA2N5912H
{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"5p","V(GS)off Max. (V)":"5","Absolute Max. Power Diss. (W)":"500m","I(GSS) Max. (A)":"100p","I(DSS) Min. (A)":"7.0m","V(BR)GSS (V)":"25","g(fs) Min. (S) Trans. conduct.":"5.0m","I(D) Abs. Drain Current (A)":"40m","Package":"TO-78","Military":"N","g(fs) Max, (S) Trans. conduct,":"10m"}...
803 Bytes - 16:00:11, 25 December 2024
Calogic.net/CA2N5912X
{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"5p","V(GS)off Max. (V)":"5","Absolute Max. Power Diss. (W)":"500m","I(GSS) Max. (A)":"100p","I(DSS) Min. (A)":"7.0m","V(BR)GSS (V)":"25","g(fs) Min. (S) Trans. conduct.":"5.0m","I(D) Abs. Drain Current (A)":"40m","Package":"Chip","Military":"N","g(fs) Max, (S) Trans. conduct,":"10m"}...
802 Bytes - 16:00:11, 25 December 2024
Calogic.net/X2N5912
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"UNSPECIFIED","Channel Type":"N-CHANNEL","Terminal Form":"NO LEAD","Operating Mode":"DEPLETION","Package Style":"UNCASED CHIP","Transistor Application":"AMPLIFIER","Highest Frequency Band":"VERY HIGH FREQUENCY BAND","Number of Elements":"2","Feedback Cap-Max (Crss)":"1.2 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"UPPER","Transistor Type":"RF SMALL SIGNAL","Package Shape":"SQUARE","C...
1268 Bytes - 16:00:11, 25 December 2024
Linearsystems.com/2N5912
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, TO-71, 6 PIN","Terminal Form":"WIRE","Operating Mode":"DEPLETION","Package Style":"CYLINDRICAL","Transistor Application":"AMPLIFIER","Feedback Cap-Max (Crss)":"1.2 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"COMPLEX","Number of Terminals":"6",...
1233 Bytes - 16:00:11, 25 December 2024
Linearsystems.com/2N5912C
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, TO-71, 6 PIN","Terminal Form":"WIRE","Operating Mode":"DEPLETION","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Feedback Cap-Max (Crss)":"1.2 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"COMPLEX","Number of Terminals":"6",...
1241 Bytes - 16:00:11, 25 December 2024
Solitrondevices.com/2N5912
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"DEPLETION","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SEPARATE, 2 ELEMENTS","Number of Terminals":"6","Number of Elements":"2"}...
1141 Bytes - 16:00:11, 25 December 2024
Vishay.com/2N5912
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, TO-78, 7 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"DEPLETION","Feedback Cap-Max (Crss)":"1.2 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Pac...
1302 Bytes - 16:00:11, 25 December 2024

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