ca CORPORATION Dual N-Channel JFET High Frequency Amplifier 2N5911 /2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS | Tight Tracking (Ta = 25C unless otherwise specified) Low Insertion Loss Gate-Drain or Gate-Source Voltage ..............5. -25V @ Good Matching Gate Current ....;.... Le bebe cece ene en er enee 50mA Storage Temperature Range ............. 65C to +200C PIN CONFIGURATION Operating Temperature Range vase eeeees -55C to +150C : Lead Temperature (Soldering, 10sec) ............. +300C One Side Both Sides Power Dissipation 367mW S00mW Derate above 25C 3.0mW/C 4.0mW/C TO-99 NOTE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ORDERING INFORMATION @ Part Package Temperature Range 02 Cat ce St 2N5911-12 Hermetic TO-99 -55C to +150C X2N5912 = Sorted Chips in Carriers -55C to +150C ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise specitied) SYMBOL PARAMETER MIN MAX | UNITS TEST CONDITIONS lass Gate Reverse Current 100 pA _| Vas = -15, Vos = 0 -250 nA | Ta = 150C BVess Gate Reverse Breakdown Voltage -25 lq =-1pA, Vos = 0 Vasioh) Gate-Source Cutoff Voltage 1 5 Vs | Vos = 10V, fp = 1nA Ves Gate-Source Voltage -0.3 4 00 A Voa = 10V, lp = SMA lo Gate Operating Current 7 p -100 nA Ta = 150C loss Saturation Drain Current (Pulsewidth 300s, duty cycle 3%) 7 40 mA | Vps = 10V, Vas = OV Ots Common-Souree Forward Transconductance 5000 | 10,000 f = 1kHz Ots Common-Source Forward Transconductance (Note 1) 5000 | 10,000 us f = 100MHz Gos Common-Source Output Conductance 100 f= 1kHz Goss Common-Source Output Conductance (Note 1) 150 f = 100MHz Ciss Common-Source Input Capacitance (Note 1) 5 - Voa = 10V, In = SmA f= 1M = z Cras Common-Source Reverse Transfer Capacitance (Note 1) 1.2 p = . ae : av en Equivalent Short Circuit Input Noise Voltage (Note 1) 20 Wir f = 10kHz f = 10kHz NF Spot Noise Figure (Note 1) 1 aB Rig = 100kQ 2N5911 /2N5912 | - calogic ELECTRICAL CHARACTERISTICS (Continued) (Ta = 25C unless otherwise specified) 2N5911 2N5912 SYMBOL PARAMETER UNITS TEST CONDITIONS : MIN | MAX] MIN | MAX | lai -la2 | Differential Gate Current 20 20 nA Voc = 10V, Ip = 5mA Ta = 125C lossi : . . Vos = 10V, Vas =0 Ipsee Saturation Drain Current Ratio }0.95] 1 [0.95] 1 (Pulsewidth 300A, duty cycle <3%) | Ves1 -Vese | Differential Gate-Source Voltage 10 15 mV Ta= 25C A| Vos: -Vase| | Gate-Source Voltage 20 40 Te = 125C AT _ | Differential Drift (Measured at BVIPC | Ving = 10V, Ip = SMA end points, Ta and Tp) 20 40 ' Ta = -55C Ta = 25C on Transconductance Ratio 0.95) 1 |095) 1 f = 1kHz 1B NOTE 1: For design reference only, not 100% tested, 8-20