Dual N-Channel JFET
High Frequency Amplifier
2N5911 / 2N5912
FEATURES
•• T i ght T racking
•• Low Insertion Loss
•• Good Matching
ABSOLUTE M AXIM UM R A T INGS
(TA = 25oC unless o ther wise spec ified)
Gate- Dr ain or Gate -So urce Voltage . . . . . . . . . . . . . . . . -25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Stor age Temper at ure R a nge. . . . . . . . . . . . . -65oC t o +200oC
Oper at ing Temper atur e Ra nge . . . . . . . . . . . -55oC to +150 oC
Lead Temp e ra ture (Solder in g, 10sec). . . . . . . . . . . . . +300oC
On e Side Both Si des
Power Dissipat ion 367m W 500m W
Der ate abo ve 2 5oC3.0mW/
oC 4.0mW/oC
NOTE: Str esses above those listed under "Abs o l ute Maxim um
Ratings" may cause permanent damage to the device. These are
stress ratings only and fu nctional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absol ute maximum
rating conditions for extended peri ods may affect device reliability.
ORDERING INFORMATION
Part Package Temperature Range
2N5911-12 Herm etic T O -9 9 -55 oC to +150oC
X2N5912 Sort ed Chips in Carr ier s -55oC to +150oC
LLC
PIN CONFIGUR ATION
S2G1 D2 D1 G2 S1
C
TO-99
ELECTRICA L CHARACTERI STIC S (TA = 2 5oC unle ss other wise sp ecif ied)
SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS
IGSS Gate Reverse Current -100 pA VGS = -15V, VDS = 0
-250 nA TA = 150oC
BVGSS Gate Reverse Breakdown Voltage -25 V
IG = -1µA, VDS = 0
VGS(off) Gate-Source Cutoff Voltage -1 -5 VDS = 1 0V, I D = 1nA
VGS Gate-Source Voltage -0.3 -4 VDG = 10V, ID = 5mA
IGGate Operating Current -100 pA
-100 nA TA = 150oC
IDSS Saturation Drain Current (Pulsewidth 300µs, duty cycle ≤3%) 740mA
VDS = 10V, V GS = 0V
gfs Common-Source Forward T ransconductance 5000 10,000
µS
VDG = 10V, ID = 5mA
f = 1kHz
gfs Common-Source Forward Transconductance (Note 1) 5000 10,000 f = 100MHz
gos Common-Source Output Conductance 100 f = 1kHz
goss Common-Source Output Conductance (Note 1) 150 f = 100MHz
Ciss Common-Source Input Capacitance (Note 1) 5 pF f = 1MHz
Crss Common-Source Reverse Transfer Capacitance (Note 1) 1.2
enEquivalent Short Cir cuit Inp ut Noise Vol tag e (Note 1) 20 nV
√Hz f = 10kHz
NF Spot Noise Figure (Note 1) 1 dB f = 10kHz
RG = 100kΩ
CJ1
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS013 REV B
Hermetic TO
-
78
TO-78
2N5911 / 2N5912
LLC
ELECTRICA L CHARACTERI STIC S (Continued) (TA = 2 5oC unless otherwise specif ied)
SYMBOL PARAMETER 2N5911 2N5912 UNITS TEST CONDITIONS
MIN MAX MIN MAX
| IG1 -IG2 | Diffe rentia l Gate Cu rren t 20 20 n A VDG = 10V, ID = 5 mA T A= 12 5oC
IDSS1
IDSS2 Saturation Drain Current Ratio 0.95 1 0.95 1 VDS = 10V, V GS = 0
(Pulsewidth 300µA, duty cycle ≤3%)
| VGS1 -VGS2 | Differential Gate-Source Volt age 10 15 mV
VDG = 10V, ID= 5mA
∆ | VGS1− VGS2 |
∆T
Gate-Source Voltage
Differential Drift (Measured at
end points, TAand TB)
20 40
µV/oC
TA= 25oC
TB= 1 25oC
20 40 TA= -55 oC
TB= 2 5oC
gfs1
gfs2 Transconductance Ratio 0.95 1 0.95 1 f = 1kHz
NOTE 1: For design reference only, not 100% tested.
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS013 REV B
