01/99 B-23
2N5911, 2N5912
Dual N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Continuous Forward Gate Current 50 mA
Total Device Power Dissipation 500 mW
Power Derating 4 mW°C
Storage Temperature Range –65°C to + 200°C
SOIC-8 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 N/C,
5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted
TOÐ78 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1,
4 Case, 5 Source 2, 6 Drain 2,
7 Gate 2, 8 Omitted
Surface Mount
SMP5911, SMP5912
At 25°C free air temperature: 2N5911 2N5912 Process NJ30L or NJ36D
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 100 – 100 pA VGS = – 15V, VDS = ØV
– 250 – 250 nA VGS = – 15V, VDS = ØV TA= 150°C
Gate Operating Current IG– 100 – 100 pA VDG = 10V, ID= 5 mA
– 100 – 100 nA VDG = 10V, ID= 5 mA TA= 125°C
Gate Source Cutoff Voltage VGS(OFF) – 1– 5– 1– 5 V V
DS = 10V, ID= 1 nA
Gate Source Voltage VGS – 0.3 – 4 – 0.3 – 4 V VDS = 10V, ID= 5 mA
Drain Saturation Current (Pulsed) IDSS 740740mAV
DS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source gfs 5000 10000 5000 10000 µS VDG = 10V, ID= 5 mA f = 1 kHz
Forward Transconductance 5000 10000 5000 10000 µS VDG = 10V, ID= 5 mA f = 100 MHz
Common Source gos 100 100 µS VDG = 10V, ID= 5 mA f = 1 kHz
Output Conductance 150 150 µS VDG = 10V, ID= 5 mA f = 100 MHz
Common Source Input Capacitance Ciss 55pFV
DG = 10V, ID= 5 mA f = 1 MHz
Common Source Crss 1.2 1.2 pF VDG = 10V, ID= 5 mA f = 1 MHz
Reverse Transfer Capacitance
Equivalent Short Circuit Input Noise Voltage ¯eN20 20 nV/√Hz VDG = 10V, ID= 5 mA f = 10 kHz
Noise Figure NF 1 1 dB VDG = 10V, ID= 5 mA f = 10 kHz
RG= 100KΩ
Differential Gate Current IG1 – IG2 20 20 nA VDG = 10V, ID= 5 mA TA= 125°C
Saturation Drain Current Ratio IDSS1 / IDSS2 0.95 1 0.95 1 VDG = 20V, VGS = ØV
Differential Gate Source Voltage | VGS1 – VGS2 |10 15 mV VDG = 10V, ID= 5 mA
TA= 25°C,
Gate Source Voltage ∆VGS1– VGS2 20 40 mV VDG = 10V, ID= 5 mA TB= 125°C
Differential Drift ∆TTA= – 55°C,
20 40 mV VDG = 10V, ID= 5 mA TB= 25°C
Transconductance Ratio gfs1 / gfs2 0.9 1 0.85 1 VDG = 10V, ID= 5 mA f = 1 kHz
¥ Wideband Differential
Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/14/99 11:31 AM Page B-23
