CALOGIC CoRP cLeE D Mi 18443ee oo00077? 3 _\, CORPORATION Q Wideband Matched Dual N-Channel JFETs 7-31-25 FEATURES High Gain shrough 100 MHz........ Low Offset. @ Low Noise. e Matching Characteristics Specified APPLICATIONS @ Wideband Differential Amplifiers Precisior Current Sources @ Source Follower @ Analog Switches ' 91s > 5000 zmho ceanee 10mV Max. .... NF=1dB Max. 2N5911/2N5912 DESCRIPTION The CA2N5911/CA2N5912 is a monolithic matched dual N-channel JFET. An exclusive Silicon Nitride passivation process provides excellent stability and matching over temperature and time. Matching characteristics include offset voltage of 10mV max. and temperature drift of 20uV/C. The High Gain and High Speed makes the CA2N5911/CA2N5912 ideal for use in input stage high speed amplifiers. ORDERING INFORMATION DEV. # PACKAGE TEMP, RANGE CA2N5911H . TO078 -55to +125 CA2N5912H TO78 ~55 to +125 CA2N5911X DIE FORM . CA2N5912X DIE FORM * Tested at 25C Pin Connection | Bottom View Package Dimensions TO-78 0016 (408) ve 0747) ; Bottom View a CALOGIC CORP CLE D M@ 1444322 0000078 5 am | 31-25 CORPORATION a . ae ABSOLUTE MAXIMUM RATINGS (25C) Die Characteristics Gate-to-Gate Voltage 0.6... cece cece eee +80V - Gate-Drain or Gate-Source Voltage ................. 25V 1 7 1.8 \ Gate Current ................0000, beeen eens 50mA 2D. i Device Dissipation (Each Side), (Derate 3mW/C) ...: 367mMW i cond Total Device Dissipation, (Derate 4mW/ i ) nn 500mWw i 3. Gy Storage Temperature Range ...... beeeae ~65C to +200C i 4. Lead Temperature (1/16" from case for 10 seconds) . . 300C ; 5. Sop ! 6. Do , " 7. G : . Go : 0.027 x 0.024 inch, 65 sq. mils ; (0.686 x 0.609mm, 0.42 sq. mm) ELECTRICAL CHARACTERISTICS (25 unless otherwise noted) , CHARACTERISTICS MIN. MAX. UNIT TEST CONDITIONS yyy Gate R Current a 100 pA Vv 18V, Vos =0 om Gass ate Reverse Curren = - 15V, = 2 ~ 250 nA os ps Ta= 150C 3]}S] BVess Gate-Source Breakdown Voltage . ~25 Io= - 1pA, Vos =0 ~)T 4 A | Yasotn Gate-Source Cutoff Voltage -1 -5 Vv Vos = 10V, Ip = 1nd 5 ] Vas Gate-Source Voltage ~0.3 \ -4 Cc ~ 100 A Voc = 10V, Ip = 5mA 6 la Gate Operating Current p dG 8 - 100 nA Ta = 125C 7 loss Saturation Drain Current (Note 1) 7 40 mA Vos = 10V, Veg =QV 8 Gls Common-Source Forward Transconductance 5000 10,000 f= 1kHz = 9 Os Common-Source Forward Transconductance 5000 10,000 h = 100MHz : mho J 101D] gos Common-Source Output Conductance ' 100 X f= 1kHz 11 Y Gos Common-Source Output Conductance 150 f = 100MHz 12 Ciss 5 Common-Source Input Capacitance 5 F Voe = 10V, Ip=5mA f= 1MH 4 = Z 131 | | Cras Common:Source ReverseTransfer Capacitance 1.2 p 1 14 c Bn Equivalent Short Circuit Input Noise Voltage 20 nV/JHz f= 10kHz ; . {=10kH 15 NF Spot Nolse Figure 1 dB Ro ook ELECTRICAL CHARACTERISTICS (25 unless otherwise noted) 2N5911 2N5912 ; CHARACTERISTICS UNIT TEST CONDITIONS MIN. MAX. MIN, MAX. 16 IIo1-Ie2 | Differential Gate Current ' 20 20 nA | Vog=10V, Ip =5mA Ta = 125C Ipss1 Saturation Drain Current Ratio _ _ 17 M Ipss2 (Notes 1 and 2) 0.95 1 0.95 1 -_ Vps=10V, Veg =0 118 ; | Vas: -Vese | Differential Gate-Source Voltage 10 15 mv i c i ' Ta= 25C "8/4! alVasi-Vase| Gate-Source Voltage Difterential 20! 40 Tg = 125C J!) =a-___ rift (Note 3) + BVIPC | Vog = 10V, Ip=5mA --_ 20| N ar 20 40 Tas ~ 85C G Tp = 25C 21 aia Transconductance Ratio (Note 2) 0.95 1 0.95 1 - f= 1kHz NoTEs: | 1. Pulsewidth <300 us, duty cycle <3%. 2. Assumes smaller value In numerator. 3. Measured at end points, Ta and Tg. cal Cc 237 Whitney Place Fremont, CA 94539 CORPORATION (415) 656-2900 TLX: 6771346 FAX; (415) 651-1076 Information furnished by Calogic is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties'which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Calogic.