Product Datasheet Search Results:
2 Pages, 34 KB, Original- SD215DE
- Calogic, Llc
- 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72
1 Pages, 20 KB, Original- SD215DE-LF
- Calogic
- SD215DE-LF
3 Pages, 338 KB, Original- SD215DE
- Linear Integrated Systems, Inc.
- 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-206AF
3 Pages, 113 KB, Scan- SD215DE
- Topaz Semiconductor
- ±10 V, N-channel enhancement-mode D-MOS FET switch
6 Pages, 62 KB, Original- SD215DE
- Temic Semiconductors
- N-Channel Lateral DMOS FETs
1 Pages, 186 KB, Scan- SD215DE
- Vishay Siliconix
- Shortform Siliconix Datasheet
6 Pages, 52 KB, Original- SD215DE-2
- Vishay Presicion Group
- 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-206AF
5 Pages, 190 KB, Scan- SD215DE883B
- Vishay Presicion Group
- 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-206AF
Product Details Search Results:
Calogic.net/SD215DE
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"70 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Transistor Applic...
1463 Bytes - 03:29:15, 15 January 2025
Calogic.net/SD215DE-LF
747 Bytes - 03:29:15, 15 January 2025
Linearsystems.com/SD215DE
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"70 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...
1547 Bytes - 03:29:15, 15 January 2025
Various/SD215DE/R
{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"500f","Absolute Max. Power Diss. (W)":"300m","g(fs) Max, (S) Trans. conduct,":"12m","Package":"TO-72","V(BR)DSS (V)":"25","g(fs) Min. (S) Trans. conduct.":"10m","I(D) Abs. Drain Current (A)":"50m","r(DS)on Max. (Ohms)":"70"}...
751 Bytes - 03:29:15, 15 January 2025
Vishay.com/SD215DE-2
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"70 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Transistor Application"...
1479 Bytes - 03:29:15, 15 January 2025
Vishay.com/SD215DE883B
{"Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"70 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Transistor Application":"SWITCHING","Case Connection...
1467 Bytes - 03:29:15, 15 January 2025
Documentation and Support
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