SD211DE-2/213DE-2/215DE-2
Vishay Siliconix
Document Number: 70295
S-02889—Rev. G, 21-Dec-00 www.vishay.com
1
N-Channel Lateral DMOS FETs
(Available Only In Extended Hi-Rel Flow)
PRODUCT SUMMARY
Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns)
SD211DE-2 30 1.5 45 @ VGS = 10 V 0.5 2
SD213DE-2 10 1.5 45 @ VGS = 10 V 0.5 2
SD215DE-2 20 1.5 45 @ VGS = 10 V 0.5 2
FEATURES BENEFITS APPLICATIONS
DUltra-High Speed Switching—tON: 1 ns
DUltra-Low Reverse Capacitance: 0.2 pF
DLow Guaranteed rDS @ 5 V
DLow Turn-On Threshold Voltage
DN-Channel Enhancement Mode
DHigh Speed System Performance
DLow Insertion Loss at High Frequencies
DLow Transfer Signal Loss
DSimple Driver Requirement
DSingle Supply Operation
DFast Analog Switch
DFast Sample-and-Holds
DPixel-Rate Switching
DDAC Deglitchers
DHigh-Speed Driver
DESCRIPTION
The SD211DE-2 series consists of enhancement- mode
MOSFETs designed for high speed low-glitch switching in
audio, video, and high-frequency applications. The
SD211DE-2 may be used for "5-V analog switching or as a
high speed driver of the SD214DE-2. The SD214DE-2 is
normally used for "10-V analog switching. These MOSFETs
utilize lateral construction to achieve low capacitance and
ultra-fast switching speeds. An integrated Zener diode
provides ESD protection. These devices feature a poly-silicon
gate for manufacturing reliability.
The SD211DE/213DE/215DE are available only in the “–2”
extended hi-rel flow. The Vishay Siliconix “–2” flow complies
with the requirements of MIL-PRF-19500 for JANTX discrete
devices.
Top View
G
S
D
TO-206AF
(TO-72) Body
Substrate
(Case)
1
23
4
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Gate-Drain, Gate-Source Voltage (SD211DE-2) –30/25 V. . . . . . . . . . . . . .
(SD213DE-2) –15/25 V. . . . . . . . . . . . .
(SD215DE-2) –25/30 V. . . . . . . . . . . . .
Gate-Substrate Voltage (Derate 3 mW/_C above 25_C)
(SD211DE-2) –0.3/25 V. . . . . . . . . . . . . . . . . . . . .
(SD213DE-2) –0.3/25 V. . . . . . . . . . . . . . . . . . . .
(SD215DE-2) –0.3/30 V. . . . . . . . . . . . . . . . . . . .
Drain-Source Voltage (SD211DE-2) 30 V. . . . . . . . . . . . . . . . . . . . . . . . .
(SD213DE-2) 10 V. . . . . . . . . . . . . . . . . . . . . . . .
(SD215DE-2) 20 V. . . . . . . . . . . . . . . . . . . . . . . .
Source-Drain Voltage (SD211DE-2) 10 V. . . . . . . . . . . . . . . . . . . . . . . . .
(SD213DE-2) 10 V. . . . . . . . . . . . . . . . . . . . . . . .
(SD215DE-2) 20 V. . . . . . . . . . . . . . . . . . . . . . . .
Drain-Substrate Voltage (SD211DE-2) 30 V. . . . . . . . . . . . . . . . . . . . . . . . .
(SD213DE-2) 15 V. . . . . . . . . . . . . . . . . . . . . . . .
(SD215DE-2) 25 V. . . . . . . . . . . . . . . . . . . . . . . .
Source-Substrate Voltage (SD211DE-2) 15 V. . . . . . . . . . . . . . . . . . . . . . . . .
(SD213DE-2) 15 V. . . . . . . . . . . . . . . . . . . . . . . .
(SD215DE-2) 25 V. . . . . . . . . . . . . . . . . . . . . . . .
Drain Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 seconds) 300_C. . . . . . . . . . . . . . . .
Storage Temperature –65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 125_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Derate 3 mW/_C above 25_C) 300 mW. . . . . . . . . . . . . . . .
Applications Information—See Applications Note AN502
SD211DE-2/213DE-2/215DE-2
Vishay Siliconix
www.vishay.com
2 Document Number: 70295
S-02889Rev. G, 21-Dec-00
SPECIFICATIONSa
Limits
211DE-2 213 DE-2 215 DE-2
Parameter SymbolbTest ConditionsbTypcMin Max Min Max Min Max Unit
Static
VGS = VBS = 0 V, ID = 10 mA 35 30
Drain-Source Breakdown Voltage V(BR)DS VGS = VBS = 5 V, ID = 10 nA 30 10 10 20
Source-Drain Breakdown Voltage V(BR)SD VGD = VBD = 5 V, IS = 10 nA 22 10 10 20
Drain-Substrate Breakdown Voltage V(BR)DBO VGB = 0 V, ID = 10 nA
Source Open 35 15 15 25 V
Source-Substrate Breakdown Voltage V(BR)SBO VGB = 0 V, IS = 10 mA
Drain Open 35 15 15 25
VDS = 10 V 0.4 10 10
Drain-Source Leakage IDS(off) VGS = VBS = 5 V VDS = 20 V 0.9 10
VSD = 10 V 0.5 10 10 nA
Source-Drain Leakage ISD(off) VGD = VBD = 5 V VSD = 20 V 1 10
Gate Leakage IGBS VDB = VSB = 0 V, VGB = 30V 0.01 100 100 100
Threshold Voltage VGS(th) VDS = VGS , ID = 1 mA, VSB = 0 V 0.8 0.5 1.5 0.1 1.5 0.1 1.5 V
VGS = 5 V 58 70 70 70
VGS = 10 V 38 45 45 45
Drain-Source On-Resistance rDS(on) VSB = 0 V
I = 1 mA VGS = 15 V 30 W
DS(on) ID = 1 mA VGS = 20 V 26
VGS = 25 V 24
Dynamic
Forward Transconductance gfs VDS = 10 V, VSB = 0 V,
ID = 20 mA, f = 1 kHz 11 10 10 10 mS
Gate Node Capacitance C(GS+GD+GB) 2.5 3.5 3.5 3.5
Drain Node Capacitance C(GD+DB) V = 10 V, f = 1 MHz 1.1 1.5 1.5 1.5
Source Node Capacitance C(GS+SB)
VDS = 10 V, f = 1 MHz
VGS = VBS = 15 V 3.7 5.5 5.5 5.5 pF
Reverse Transfer Capacitance Crss 0.2 0.5 0.5 0.5
Switching
td(on) 0.5 1 1 1
Turn-On Time trV
SB
= 0 V, V
IN
0 to 5 V, R
G
= 25 W0.6 1 1 1
td(off)
VSB = 0 V, VIN 0 to 5 V, RG = 25
W
VDD = 5 V, RL = 680 W2ns
Turn-Off Time tf6
Notes:
a. TA = 25_C unless otherwise noted. DMCBA
b. B is the body (substrate), and (BR) is breakdown.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
SD211DE-2/213DE-2/215DE-2
Vishay Siliconix
Document Number: 70295
S-02889Rev. G, 21-Dec-00 www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Leakage Current vs. Applied Voltage
On-Resistance vs. Temperature
Threshold Voltage vs. Temperature
On-Resistance vs. Gate-Source Voltage
Common-Source Forward Transconductance
vs. Drain Current
Applied Voltage (V)
020
ISBO
IGSS (Diode)
ID (off) @ VGS = VBG = 5 V
IS(off) @ VGD = VBD = 5V
ISBO @ VGB = 0 V, Drain Open
10 nA
1 nA
100 pA
10 pA
1 pA
IS(off)
Leakage
300
04812 20
240
180
60
016
120 5 V
10 V
VGS = 4 V
1 100
20
16
12
8
4
010
25_C
VDS = 15 V
VBS = 0 V
TA = 55_C
125_C
100
60 602020 100 140
80
60
40
20
0
10 V
15 V
20 V
5
60 60 1002020 140
4
3
2
1
0
5 V
1 V
0 V
VGS = VDS = VTH
ID = 1 mA
VBS = 10 V
ID = 5 mA, VBS = 0 V
4 8 12 16
TA Temperature (_C)
TA Temperature (_C)
ID Drain Current (mA)
gfs Forward Transconductance (mS)
VGS = 5 V
Output Conductance vs. Drain Current
1.0
0204
0.8
0.6
0.4
0.2
0
VDS = 5 V
15 V
VBS = 0 V
f = 1 kHz
ID Drain Current (mA)
gos
81216
Output Conductance (mS)
Gate-Source Threshold Voltage (V)VGS(th)
VSB Body-Source Voltage (V)
ID(off)
10 V
0.5 V
On-Resistance (rDS(on) W) On-Resistance (rDS(on) W)
SD211DE-2/213DE-2/215DE-2
Vishay Siliconix
www.vishay.com
4 Document Number: 70295
S-02889Rev. G, 21-Dec-00
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold V oltage vs. Substrate-Source Voltage Leakage Current vs. Temperature
Input Admittance Forward Admittance
Capacitance vs. Gate-Source Voltage Body Leakage Current vs. Drain-Body Voltage
5
0420
4
3
2
1
0
H
L
VGS = VDS = VTH
ID = 1 mA
TA = 25_C
100
10
125 50 75 100 125
ISBO
ID(off)
IS(off)
IGSS
(Diode)
Leakage (nA)
10
04 20
8
6
4
2
0
VDS = 10 V, f = 1 MHz
VGS = VBS
Capacitance (pF)
C(GS+SB)
C(GS+GD+GB)
C(GD+DB)
C(DG)
012168420
VDB (V)
ID = 13 mA
1 mA
Body Leakage
IB
100
10
1
0.1 100 1000
bis
gis
(mS)
VDS = 10 V
ID = 10 mA
TA = 25_C
100
10
1
0.1 100 1000
(mS)
VDS = 10 V
ID = 10 mA
TA = 25_C
gfs
bfs
TA Temperature (_C)
VGS Gate-Source Voltage (V)
f Frequency (MHz) f Frequency (MHz)
812 16
81216
200 500 200 500
Gate-Source Threshold Voltage (V)VGS(th)
ID(off) @ VGS = VBS = 5 V, VDS = 10 V
IS(off) @ VGD = VBD = 5 V, VSD = 10 V
IGSS @ VGS = 10 V
ISBO @ VSB = 10 V
Drain Open
100 mA
100 nA
1 nA
100 pA
1 pA
10 mA
1 mA
10 nA
10 pA
VBS Body-Source Voltage (V)
SD211DE-2/213DE-2/215DE-2
Vishay Siliconix
Document Number: 70295
S-02889Rev. G, 21-Dec-00 www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Admittance Output Admittance
Switching Characteristics Output Characteristics
1
0.1
0.01
0.001100 1000
(mS)
VDS = 10 V
ID = 10 mA
TA = 25_Cbrs
+grg
grg
100
10
1
0.1 100 1000
(mS)
VDS = 10 V
ID = 10 mA
TA = 25_C
700
600
500
001 7
400
300
200
100
23456
tf Fall Time (ns)
RL(
50
04 20
40
30
20
10
0
4 V
3 V
2 V
VBS = 0 V
TA = 25_C
VGS = 5 V
bog
gog
f Frequency (MHz) f Frequency (MHz)
VDS Drain-Source Voltage (V)
Drain Current (mA)
ID
200 500 200 500
81216
)W
SWITCHING TIME TEST CIRCUIT
510 WRL
51
VIN
To
Scope +VDD
VOUT
To Scope
0 V
50%
10%
90%
td(on) td(off)
trtf
+5 V
0 V
+VDD
VIN
VOUT
Input pulse: td, tr < 1 ns
Pulse width: 100 ns
Rep rate: 1 MHz
Sampling Scope
tr < 360 ps
RIN = 1 MW
CIN = 2 pF
BW = 500 MHz
50%
W
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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