SD211DE-2/213DE-2/215DE-2
Vishay Siliconix
Document Number: 70295
S-02889—Rev. G, 21-Dec-00 www.vishay.com
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N-Channel Lateral DMOS FETs
(Available Only In Extended Hi-Rel Flow)
PRODUCT SUMMARY
Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns)
SD211DE-2 30 1.5 45 @ VGS = 10 V 0.5 2
SD213DE-2 10 1.5 45 @ VGS = 10 V 0.5 2
SD215DE-2 20 1.5 45 @ VGS = 10 V 0.5 2
FEATURES BENEFITS APPLICATIONS
DUltra-High Speed Switching—tON: 1 ns
DUltra-Low Reverse Capacitance: 0.2 pF
DLow Guaranteed rDS @ 5 V
DLow Turn-On Threshold Voltage
DN-Channel Enhancement Mode
DHigh Speed System Performance
DLow Insertion Loss at High Frequencies
DLow Transfer Signal Loss
DSimple Driver Requirement
DSingle Supply Operation
DFast Analog Switch
DFast Sample-and-Holds
DPixel-Rate Switching
DDAC Deglitchers
DHigh-Speed Driver
DESCRIPTION
The SD211DE-2 series consists of enhancement- mode
MOSFETs designed for high speed low-glitch switching in
audio, video, and high-frequency applications. The
SD211DE-2 may be used for "5-V analog switching or as a
high speed driver of the SD214DE-2. The SD214DE-2 is
normally used for "10-V analog switching. These MOSFETs
utilize lateral construction to achieve low capacitance and
ultra-fast switching speeds. An integrated Zener diode
provides ESD protection. These devices feature a poly-silicon
gate for manufacturing reliability.
The SD211DE/213DE/215DE are available only in the “–2”
extended hi-rel flow. The Vishay Siliconix “–2” flow complies
with the requirements of MIL-PRF-19500 for JANTX discrete
devices.
Top View
G
S
D
TO-206AF
(TO-72) Body
Substrate
(Case)
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23
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ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Gate-Drain, Gate-Source Voltage (SD211DE-2) –30/25 V. . . . . . . . . . . . . .
(SD213DE-2) –15/25 V. . . . . . . . . . . . .
(SD215DE-2) –25/30 V. . . . . . . . . . . . .
Gate-Substrate Voltage (Derate 3 mW/_C above 25_C)
(SD211DE-2) –0.3/25 V. . . . . . . . . . . . . . . . . . . . .
(SD213DE-2) –0.3/25 V. . . . . . . . . . . . . . . . . . . .
(SD215DE-2) –0.3/30 V. . . . . . . . . . . . . . . . . . . .
Drain-Source Voltage (SD211DE-2) 30 V. . . . . . . . . . . . . . . . . . . . . . . . .
(SD213DE-2) 10 V. . . . . . . . . . . . . . . . . . . . . . . .
(SD215DE-2) 20 V. . . . . . . . . . . . . . . . . . . . . . . .
Source-Drain Voltage (SD211DE-2) 10 V. . . . . . . . . . . . . . . . . . . . . . . . .
(SD213DE-2) 10 V. . . . . . . . . . . . . . . . . . . . . . . .
(SD215DE-2) 20 V. . . . . . . . . . . . . . . . . . . . . . . .
Drain-Substrate Voltage (SD211DE-2) 30 V. . . . . . . . . . . . . . . . . . . . . . . . .
(SD213DE-2) 15 V. . . . . . . . . . . . . . . . . . . . . . . .
(SD215DE-2) 25 V. . . . . . . . . . . . . . . . . . . . . . . .
Source-Substrate Voltage (SD211DE-2) 15 V. . . . . . . . . . . . . . . . . . . . . . . . .
(SD213DE-2) 15 V. . . . . . . . . . . . . . . . . . . . . . . .
(SD215DE-2) 25 V. . . . . . . . . . . . . . . . . . . . . . . .
Drain Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 seconds) 300_C. . . . . . . . . . . . . . . .
Storage Temperature –65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 125_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Derate 3 mW/_C above 25_C) 300 mW. . . . . . . . . . . . . . . .
Applications Information—See Applications Note AN502