$D211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) PRODUCT SUMMARY Part Number Visryos Min (V) Vasith) Max (V) Tps(on) Max (2) Cras Max (pF) ton Max (ns) $D211DE-2 30 15 45 @ Vgg=10V 05 2 $D213DE-2 10 15 45 @ Vag = 10V 0s 2 S0215DE-2 20 15 45 @ Vag = 10V 05 2 FEATURES BENEFITS APPLICATIONS @ Ultra-High Speed Switchington: 1 ns e High Speed System Performance @ Fast Analog Switch e Ultra-Low Reverse Capacitance: 0.2 pF @ Low Insertion Loss at High Frequencies @ Fast Sample-and-Holds @ tow Guaranteed rps @ 5 V @ Low Transfer Signal Loss Pixel-Rate Switching @ Low Turn-On Threshold Voltage Simple Driver Requirement @ DAC Deglitchers @ N-Channel Enhancement Mode @ Single Supply Operation @ High-Speed Driver DESCRIPTION The SD211DE-2 series consists of enhancement- mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The $D211DE-2 may be used for + 5-V analog switching or as a high speed driver of the SD214DE-2. The SD21t4DE-2 is normally used for + 10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. An integrated Zener diode TO-206AF (10-72) ss o Top View provides ESD protection. These devices feature a poly-silicon gate for manufacturing reliability. The $D211DE/213DE/215DE are available only in the -2 extended hi-rel flow. The Vishay Siliconix -2 flow complies with the requirements of MIL-PRF-19500 for JANTX discrete devices. Body Substrate (Case) ABSOLUTE MAXIMUM RATINGS (T, = 25C UNLESS OTHERWISE NOTED) Gate-Drain, Gate-Source Voitage (SD211DE-2) .............. 30/25 V (80213DE-2) .............. ~15/25 V (SD215DE-2) .............. 25/30 V Gate-Substrate Voltage (Derate 3 mW/C above 25C) (SD211DE-2) (SD213DE-2) .. (SD215DE-2) .. Drain-Source Voltage (SD211DE-2) .. (SD213DE-2) .. (SD2150E-2) Source-Drain Vattage (SD211DE-2) (SD213DE-2) .. (SD215DE-2) Applications Infarmation-See Applications Note AN502 Drain-Substrate Voltage ($D211DE-2) (SD213DE-2) ... ($D215DE-2) Source-Substrate Voltage (SD211DE-2) (SD213DE-2) ... (SD215DE-2) ... Drain Currant .. 0.0.6... cece cee eee eee ee Lead Temperature (1/1 from case for 10 seconds) ................- 300C Storage Temperature 2.00.2 -65 to 150C Operating Junction Temperature ..............--.. 00 cece ~55 to 126C Power Dissipation (Derate 3 mW/C above 25C) ...............- 300 mw www.vishay.com Document Number: 70295 -02889Rev. G, 21-Dec-00VISHAY $D211DE-2/213DE-2/215DE-2 Vishay Siliconix SPECIFICATIONS Limits 211DE-2 213 DE-2 215 DE-2 Parameter Symbol> Test Conditions Typ | Min | Max | Min | Max | Min | Max | Unit Static : in ereakd y Ves = Ves = OV, Ip = 10 pA 35 30 Drain-Source Breakdown Voltage (BR)OS Vas = Vag 2-5V, Ip 210nA 30 70 To E) Source-Drain Breakdown Voltage Viaryso Veo = Vap =-5 V, Ig = 10 nA 22 10 10 20 v Drain-Substrate Breakdown Voltage V(BR)OBO Ve8 Ova Oo a na 35 18 15 25 Source-Substrate Breakdown Voltage | Vigayspo Vea an Sen HA 35 | 15 15 25 Vos=10V | 0.4 10 10 in- kat I Vas = Veg =-5V Drain-Source Leakage DSiotty as = Ves Yoon Z0V 15 10 ; | Vv Vsp = 10V 0.8 10 10 nA Source-Drain Leakage ISD(off) Vap = Vep = -5 Vana B0V 7 10 Gate Leakage cas Vos = Veg = 0 V, Vea = 30V 0.01 100 100 100 Threshold Voltage Vasith) Vos = Ves. Ip = 1 pA, Vgg = OV 0.8 0.5 1.6 01 16 O41 1.5 Vv Vas=5V 58 70 70 70 Ves=toV [| 3a 45 45 45 Drain-Source On-Resistance fDSton) 2 1 mK Vas =15V 30 Q Vas=20V | 26 Vas = 25 V 24 Dynamic Vos = 10 V, Vsp = OV, Forward Transconductance Os Ip = 20 mA, f= 1 kHz 11 10 10 10 mS Gate Node Capacitance Cigs+G0+G8) 25 3.5 3.5 3.5 Drain Node Capacitance Cigp+0e) Vps = 10 V, f= 1 MHz 14 1.6 1.6 1.5 F Source Node Capacitance Cies+se) Vas = Ves = -15 V a7 55 55 ss | Reverse Transfer Capacitance Criss 0.2 0.5 0.5 0.5 Switching tavon) 05 1 1 1 Tum-On Time f Vep=0V, ViyOtoS V,Rg=25 [06 7 1 1 Q ns ta = = 2 Tur-Off Time Kot) Von = 5 V, RL = 680 2 t 6 Notes: a. Ta= 25C unless otherwise noted. DMCBA b. Bis the body (substrate), and (BR) is breakdown. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Document Number: 70295 www.vishay.com -02889Rev. G, 21-Dec-00 9-7 DMOS FETs o$D211 DE-2/213DE-2/215DE-2 Vishay Siliconix | TYPICAL CHARACTERISTICS (25C UNLESS NOTED) On-Resistance vs. Gate-Source Voltage 10nA 1nA 8 % @ g oD r g oc @ 100pA & o a ' 5 8 10 pA 1pA 9 4 8 t2 16 20 Vsp Body-Source Vottage (V) On-Resistance vs. Temperature Ip =5 MA, Vgg = 0V a a o 9 L e g 3 c = 3 a 8 oO 2 & g 56 Ee | 2 so g 5 aD w a ' . 2 a 20 60 100 140 Ta Temperature (C) Threshold Voltage vs. Temperature Leakage Current vs. Applied Voltage 1 10 TTT 3 ID (off) @ VGS = VBG=-5 V qf \S(off) @ VGD = VBD =-5V oq ISBO @ VGB = 0 V, Drain Open 4 | amen| La Leo 3 , a crs Ln So Ln KL Lm q AL se0 ovo ; Lo 4 Pa 3 ess (Diode) 4 l ! | Qa 4 8 12 16 20 Applied Vaitage (V) Common-Source Forward Transconductance vs. Drain Current Vos = 15 V Ves =0V 100 Ip ~ Drain Current (mA) Output Conductance vs. Drain Current S Vas = Vos = VTH Ves = 0 V o Ip=1pA f=1kHz 2 a s E > = 3 8 e 2 g & 3 E D 3 a ! 0 = a ao 3 ov > -60 -20 20 60 100 140 0 4 8 12 16 20 Ta Temperature (C) Ip Drain Current (mA) www.vishay.com Document Number: 70295 9-8 $-02889Rev. G, 21-Dec-00VISHAY $D211DE-2/213DE-2/215DE-2 Vishay Siliconix | TYPICAL CHARACTERISTICS (25C UNLESS NOTED) | Threshold Voltage vs. Substrate-Source Voltage Leakage Current vs. Temperature 5 = loot) @ Vag = Vas =5 V, Vos = 10 V = Vas = Vos = Vt to =Ven =H = o Ip=1mA @ Veo = Vap =-5 V, Vgp = 10 V 2 4 - Ta=28C logs @ Veg = 10V 2 Isp0 @ Veg = 10V a Drain Open 2 = $ 3 ec % 8 g S o = sss oO (Diode) A 1 = a oO = 96 0 4 -8 ~12 16 .-20 25 50 75 100 125 Vps Body-Source Voltage (V) Ta Temperature (C) Capacitance vs. Gate-Source Voltage Body Leakage Current vs. Drain-Body Voltage 100 WA Vpg = 10 V, f= 1 MHz Vas = Ves 10 WA 1pA c 2 & g 100 nA o oC a 4 5 3 10 nA 3 Cigs+se) 8 g + 1nA o a C(as+GD+GB) = 100 pA 10 pA 1pA 0 4 8 12 16 20 o 4 8 12 16 20 Vas Gate-Source Voltage (V) Vos (V) Input Admittance Forward Admittance Vos = 10V Vps=10V Ip = 10mA Ip= 10 mA Ta = 25C Ta = 25C a a & 100 200 500 1000 100 200 00 1000 f + Frequency (MHz) { Frequency (MHz) Document Number: 70295 www. vishay.com $-02889Rev. G, 21-Dec-00 9-9 DMOS FETs G$D211DE-2/213DE-2/215DE-2 Vishay Siliconix | TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Reverse Admittance Ip= 10 mA Ta = 25C 0.1 a 0.01 0.001 100 200 500 1000 f Frequency (MHz) Switching Characteristics e od 0 1 2 3 4 5 6 7 44 Fail Time (ns) (mS) tp Drain Current (mA) Output Admittance DS = Ip = 10 mA Ta = 25C 100 200 500 1000 f Frequency (MHz) Output Characteristics Vag =OV Ta = 25C Q 4 8 12 16 20 Vos Drain-Source Voltage (V) SWITCHING TIME TEST CIRCUIT To Scope +Vop 5102 RL Vour To Scope Input pulse: td, tr< 1 ns Puise width: 100 ns Rep rate: 1 MHz Vin t- 4 1Q Sampling Scope tr < 360 ps RIN = 1 MQ CIN = 2 pF BW = 500 MHz 90% 50% 10% www.vishay.com 9-10 Document Number: 70295 $-02889Rev. G, 21-Dec-00