SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE-2 10 1.5 45 @ VGS = 10 V 0.5 2 SD215DE-2 20 1.5 45 @ VGS = 10 V 0.5 2 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D Ultra-High Speed Switching--tON: 1 ns Ultra-Low Reverse Capacitance: 0.2 pF Low Guaranteed rDS @ 5 V Low Turn-On Threshold Voltage N-Channel Enhancement Mode High Speed System Performance Low Insertion Loss at High Frequencies Low Transfer Signal Loss Simple Driver Requirement Single Supply Operation Fast Analog Switch Fast Sample-and-Holds Pixel-Rate Switching DAC Deglitchers High-Speed Driver DESCRIPTION The SD211DE-2 series consists of enhancement- mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211DE-2 may be used for "5-V analog switching or as a high speed driver of the SD214DE-2. The SD214DE-2 is normally used for "10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. An integrated Zener diode TO-206AF (TO-72) provides ESD protection. These devices feature a poly-silicon gate for manufacturing reliability. The SD211DE/213DE/215DE are available only in the "-2" extended hi-rel flow. The Vishay Siliconix "-2" flow complies with the requirements of MIL-PRF-19500 for JANTX discrete devices. Body Substrate (Case) S 1 4 2 3 D G Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Gate-Drain, Gate-Source Voltage (SD211DE-2) . . . . . . . . . . . . . . -30/25 V (SD213DE-2) . . . . . . . . . . . . . -15/25 V (SD215DE-2) . . . . . . . . . . . . . -25/30 V Gate-Substrate Voltage (Derate 3 mW/_C above 25_C) (SD211DE-2) . . . . . . . . . . . . . . . . . . . . . -0.3/25 V (SD213DE-2) . . . . . . . . . . . . . . . . . . . . -0.3/25 V (SD215DE-2) . . . . . . . . . . . . . . . . . . . . -0.3/30 V Drain-Source Voltage Source-Drain Voltage (SD211DE-2) . . . . . . . . . . . . . . . . . . . . . . . . . 30 V (SD213DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 10 V (SD215DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 20 V (SD211DE-2) . . . . . . . . . . . . . . . . . . . . . . . . . 10 V (SD213DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 10 V (SD215DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 20 V Drain-Substrate Voltage (SD211DE-2) . . . . . . . . . . . . . . . . . . . . . . . . . 30 V (SD213DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 15 V (SD215DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 25 V Source-Substrate Voltage (SD211DE-2) . . . . . . . . . . . . . . . . . . . . . . . . . 15 V (SD213DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 15 V (SD215DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 25 V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 seconds) . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 125_C Power Dissipation (Derate 3 mW/_C above 25_C) . . . . . . . . . . . . . . . . 300 mW Applications Information--See Applications Note AN502 Document Number: 70295 S-02889--Rev. G, 21-Dec-00 www.vishay.com 1 SD211DE-2/213DE-2/215DE-2 Vishay Siliconix SPECIFICATIONSa Limits 211DE-2 Parameter Symbolb Test Conditionsb Typc Min Max 213 DE-2 Min Max 215 DE-2 Min Max Unit Static VGS = VBS = 0 V, ID = 10 mA 35 30 VGS = VBS = -5 V, ID = 10 nA 30 10 10 20 V(BR)SD VGD = VBD = -5 V, IS = 10 nA 22 10 10 20 Drain-Substrate Breakdown Voltage V(BR)DBO VGB = 0 V, ID = 10 nA Source Open 35 15 15 25 Source-Substrate Breakdown Voltage V(BR)SBO VGB = 0 V, IS = 10 mA Drain Open 35 15 15 25 Drain-Source Breakdown Voltage V(BR)DS Source-Drain Breakdown Voltage Drain-Source Leakage Source-Drain Leakage Gate Leakage Threshold Voltage Drain-Source On-Resistance IDS(off) ISD(off) VGS = VBS = -5 V VGD = VBD = -5 V V VDS = 10 V 0.4 VDS = 20 V 0.9 VSD = 10 V 0.5 VSD = 20 V 1 IGBS VDB = VSB = 0 V, VGB = 30V 0.01 VGS(th) VDS = VGS , ID = 1 mA, VSB = 0 V 0.8 rDS(on) VSB = 0 V ID = 1 mA 10 10 10 10 10 nA 10 100 0.5 1.5 100 0.1 1.5 100 0.1 1.5 VGS = 5 V 58 70 70 70 VGS = 10 V 38 45 45 45 VGS = 15 V 30 VGS = 20 V 26 VGS = 25 V 24 V W Dynamic Forward Transconductance gfs VDS = 10 V, VSB = 0 V, ID = 20 mA, f = 1 kHz 11 10 10 10 mS Gate Node Capacitance C(GS+GD+GB) 2.5 3.5 3.5 3.5 Drain Node Capacitance C(GD+DB) 1.1 1.5 1.5 1.5 Source Node Capacitance C(GS+SB) 3.7 5.5 5.5 5.5 Crss 0.2 0.5 0.5 0.5 td(on) 0.5 1 1 1 0.6 1 1 1 Reverse Transfer Capacitance VDS = 10 V, f = 1 MHz VGS = VBS = -15 V pF Switching Turn-On Time Turn-Off Time tr td(off) VSB = 0 V, VIN 0 to 5 V, RG = 25 W VDD = 5 V, RL = 680 W tf Notes: a. TA = 25_C unless otherwise noted. b. B is the body (substrate), and (BR) is breakdown. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. www.vishay.com 2 2 ns 6 DMCBA Document Number: 70295 S-02889--Rev. G, 21-Dec-00 SD211DE-2/213DE-2/215DE-2 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Leakage Current vs. Applied Voltage On-Resistance vs. Gate-Source Voltage 10 nA ID (off) @ VGS = VBG = -5 V IS(off) @ VGD = VBD = -5V ISBO @ VGB = 0 V, Drain Open 1 nA VGS = 4 V 240 Leakage r DS(on) - On-Resistance ( W ) 300 180 IS(off) 100 pA ID(off) ISBO 120 5V 10 pA 60 10 V IGSS (Diode) 1 pA 0 0 4 8 12 16 0 20 4 8 VSB - Body-Source Voltage (V) 20 20 100 VDS = 15 V VBS = 0 V gfs - Forward Transconductance (mS) ID = 5 mA, VBS = 0 V r DS(on) - On-Resistance ( W ) 16 Common-Source Forward Transconductance vs. Drain Current On-Resistance vs. Temperature 80 VGS = 5 V 60 10 V 15 V 40 20 V 20 0 16 TA = 55_C 12 25_C 8 125_C 4 0 -60 -20 20 60 100 1 140 10 Output Conductance vs. Drain Current Threshold Voltage vs. Temperature 1.0 5 VGS = VDS = VTH ID = 1 mA VBS = -10 V -5 V 2 -0.5 V -1 V 1 gos - Output Conductance (mS) VBS = 0 V f = 1 kHz 4 3 100 ID - Drain Current (mA) TA - Temperature (_C) V GS(th) - Gate-Source Threshold Voltage (V) 12 Applied Voltage (V) 0.8 VDS = 5 V 0.6 10 V 0.4 15 V 0.2 0V 0 0 -60 -20 20 60 TA - Temperature (_C) Document Number: 70295 S-02889--Rev. G, 21-Dec-00 100 140 0 4 8 12 16 20 ID - Drain Current (mA) www.vishay.com 3 SD211DE-2/213DE-2/215DE-2 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage vs. Substrate-Source Voltage Leakage Current vs. Temperature 100 ID(off) @ VGS = VBS = -5 V, VDS = 10 V IS(off) @ VGD = VBD = -5 V, VSD = 10 V VGS = VDS = VTH ID = 1 mA TA = 25_C 4 IGSS @ VGS = 10 V ISBO @ VSB = 10 V Drain Open 3 Leakage (nA) V GS(th) - Gate-Source Threshold Voltage (V) 5 H 2 IS(off) ID(off) 10 L 1 0 1 0 -8 -4 -12 -16 25 -20 50 VBS - Body-Source Voltage (V) 75 100 125 TA - Temperature (_C) Capacitance vs. Gate-Source Voltage 100 mA 10 VDS = 10 V, f = 1 MHz VGS = VBS Body Leakage Current vs. Drain-Body Voltage 10 mA 8 1 mA I B - Body Leakage Capacitance (pF) ISBO IGSS (Diode) 6 C(GS+SB) 4 C(GS+GD+GB) 2 ID = 13 mA 100 nA 10 nA 1 nA 1 mA 100 pA C(GD+DB) 10 pA C(DG) 1 pA 0 0 4 8 12 16 20 0 4 8 VGS - Gate-Source Voltage (V) 12 16 20 VDB (V) Input Admittance Forward Admittance 100 100 VDS = 10 V ID = 10 mA TA = 25_C VDS = 10 V ID = 10 mA TA = 25_C gfs 10 (mS) (mS) 10 bis 1 1 -bfs gis 0.1 0.1 100 200 500 f - Frequency (MHz) www.vishay.com 4 1000 100 200 500 1000 f - Frequency (MHz) Document Number: 70295 S-02889--Rev. G, 21-Dec-00 SD211DE-2/213DE-2/215DE-2 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Admittance Output Admittance 1 100 VDS = 10 V ID = 10 mA TA = 25_C VDS = 10 V ID = 10 mA TA = 25_C brs (mS) 10 (mS) 0.1 +grg -grg 0.01 bog 1 gog 0.001 0.1 200 100 1000 500 200 100 f - Frequency (MHz) 1000 500 f - Frequency (MHz) Switching Characteristics Output Characteristics 50 700 VBS = 0 V TA = 25_C 600 40 I D - Drain Current (mA) RL ( W) 500 400 300 200 VGS = 5 V 30 4V 20 3V 10 100 2V 0 0 0 1 2 3 4 5 6 7 0 tf - Fall Time (ns) 8 4 12 16 20 VDS - Drain-Source Voltage (V) SWITCHING TIME TEST CIRCUIT To Scope +VDD +5 V 510 W VIN 51 W Document Number: 70295 S-02889--Rev. G, 21-Dec-00 RL VIN VOUT To Scope 0V td(on) Input pulse: td, tr < 1 ns Pulse width: 100 ns Rep rate: 1 MHz +VDD Sampling Scope VOUT tr < 360 ps RIN = 1 MW CIN = 2 pF BW = 500 MHz 50% td(off) 90% 50% 10% 0V tr tf www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1