Product Datasheet Search Results:
6 Pages, 222 KB, Scan- NDS9948D84Z
- Fairchild Semiconductor Corporation
- 2.3 A, 60 V, 0.25 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
6 Pages, 222 KB, Scan- NDS9948L86Z
- Fairchild Semiconductor Corporation
- 2.3 A, 60 V, 0.25 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
6 Pages, 110 KB, Scan- NDS9948L99Z
- Fairchild Semiconductor Corporation
- 2.3 A, 60 V, 0.25 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
6 Pages, 139 KB, Original- NDS9948_NL
- Fairchild Semiconductor
- Dual P-Channel PowerTrench MOSFET
6 Pages, 222 KB, Scan- NDS9948S62Z
- Fairchild Semiconductor Corporation
- 2.3 A, 60 V, 0.25 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
6 Pages, 54 KB, Original- NDS9948
- National Semiconductor
- Dual P-Channel Enhancement Mode Field Effect Transistor
8 Pages, 363 KB, Original- NDS9948
- On Semiconductor
- Trans MOSFET P-CH 60V 2.3A 8-Pin SOIC T/R
Product Details Search Results:
Fairchildsemi.com/NDS9948
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"2.3A","Gate Charge (Qg) @ Vgs":"13nC @ 10V","Product Photos":"8-SOIC","PCN Design/Specification":"Mold Compound 12/Dec/2007","Product Training Modules":"High Voltage Switches for Power Processing SMPS Power Switch","Rds On (Max) @ Id, Vgs":"250 mOhm @ 2.3A, 10V","Datasheets":"NDS9948","FET Type":...
1865 Bytes - 18:51:00, 27 December 2024
Fairchildsemi.com/NDS9948D84Z
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.3 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1513 Bytes - 18:51:00, 27 December 2024
Fairchildsemi.com/NDS9948L86Z
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.3 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown...
1527 Bytes - 18:51:00, 27 December 2024
Fairchildsemi.com/NDS9948L99Z
{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"10 A","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"2.3 A","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"2","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POW...
1488 Bytes - 18:51:00, 27 December 2024
Fairchildsemi.com/NDS9948S62Z
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.3 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown...
1527 Bytes - 18:51:00, 27 December 2024
Onsemi.com/NDS9948
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"2.3(A)","Mounting":"Surface Mount","Operating Temp Range":"-55C to 175C","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Rad Hardened":"No","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1468 Bytes - 18:51:00, 27 December 2024
Documentation and Support
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