NDS9948 - National Semiconductor

February 1996

NDS9948

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description Features

______________________________________________________________________________

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter NDS9948 Units

VDSS Drain-Source Voltage -60 V

VGSS Gate-Source Voltage ± 20 V

IDDrain Current - Continuous TA = 25°C (Note 1a) ± 2.3 A

- Pulsed TA = 25°C ± 10

- Continuous TA = 70°C (Note 1a) ± 1.8

PDPower Dissipation for Dual Operation 2W

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1

(Note 1c) 0.9

TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

NDS9948.SAM

These P-Channel enhancement mode power field effect

transistors are produced using National's proprietary, high cell

density, DMOS technology. This very high density process has

been especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy

pulses in the avalanche and commutation modes. These

devices are particularly suited for low voltage applications such

as notebook computer power management and other battery

powered circuits where fast switching, low in-line power loss,

and resistance to transients are needed.

-2.3A, -60V. RDS(ON) = 0.25Ω @ VGS = -10V.

High density cell design for low RDS(ON).

High power and current handling capability in a widely

used surface mount package.

Dual MOSFET in surface mount package.

1

5

6

7

8

4

3

2

N

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -60 V

IDSS Zero Gate Voltage Drain Current VDS = -40 V, VGS = 0 V -2 µA

TJ = 55°C -25 µA

IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

IGSSR Gate - Body Leakage, Reverse VGS = -20V, VDS= 0 V -100 nA

ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -1 -2.4 -3 V

TJ =125°C -0.8 -2 -2.6

RDS(ON) Static Drain-Source On-Resistance VGS = -10 V, ID = -2.3 A 0.21 0.25 Ω

TJ =125°C 0.3 0.4

VGS = -4.5 V, ID = -1.6 A 0.36 0.5

ID(on) On-State Drain Current VGS = -10 V, VDS = -5 V -10 A

gFS Forward Transconductance VDS = -15 V, ID = -2.3 A 3.5 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = -25 V, VGS = 0 V,

f = 1.0 MHz 570 pF

Coss Output Capacitance 140 pF

Crss Reverse Transfer Capacitance 40 pF

SWITCHING CHARACTERISTICS (Note 2)

tD(on)Turn - On Delay Time VDD = -30 V, ID = -1 A,

VGEN = -10 V, RGEN = 6 Ω8 15 ns

trTurn - On Rise Time 20 40 ns

tD(off)Turn - Off Delay Time 20 40 ns

tfTurn - Off Fall Time 5 20 ns

QgTotal Gate Charge VDS = -30 V,

ID = -2.3 A, VGS = -10 V 16 25 nC

Qgs Gate-Source Charge 2 5 nC

Qgd Gate-Drain Charge 4 8 nC

NDS9948.SAM

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

ISMaximum Continuous Drain-Source Diode Forward Current -1.7 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.3 A (Note 2) -0.98 -1.2 V

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by

design while RθCA is determined by the user's board design.

PD(t)=TJ−TA

RθJA(t)=TJ−TA

RθJC+RθCA(t)=ID

2(t)×RDS(ON)TJ

Typical RθJA for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 78oC/W when mounted on a 0.5 in2 pad of 2oz cpperr.

b. 125oC/W when mounted on a 0.02 in2 pad of 2oz cpper.

c. 135oC/W when mounted on a 0.003 in2 pad of 2oz cpper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

NDS9948.SAM

1a 1b 1c

NDS9948.SAM

Typical Electrical Characteristics

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage

and Drain Current.

-6-5-4-3-2-10

-12

-9

-6

-3

0

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

V = -10V

GS

DS

D

-6.0

-5.0

-4.5

-4.0

-3.5

-8.0

-5.5

-7.0

-15-12-9-6-30

0.5

1

1.5

2

2.5

3

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

D

R , NORMALIZED

DS(on)

V = -4.0V

GS

-10

-6.0

-5.0

-7.0

-4.5

-8.0

-5.5

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

V = -10V

GS

I = -2.3A

D

R , NORMALIZED

DS(ON)

-15-12-9-6-30

0

1

2

3

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

T = 125°C

J

25°C

-55°C

D

V = -10 V

GS

R , NORMALIZED

DS(ON)

Figure 3. On-Resistance Variation

with Temperature. Figure 4. On-Resistance Variation with Drain

Current and Temperature.

Figure 6. Gate Threshold Variation with

Temperature.

-7-6-5-4-3-2

-10

-8

-6

-4

-2

0

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

V = -10V

DS

GS

D

T = -55°C

J25°C 125°C

Figure 5. Drain Current Variation with Gate

Voltage and Temperature.

-50 -25 025 50 75 100 125 150

0.7

0.8

0.9

1

1.1

1.2

T , JUNCTION TEMPERATURE (°C)

GATE-SOURCE THRESHOLD VOLTAGE (V)

I = -250µA

D

V = V

DS GS

J

V , NORMALIZED

th

NDS9948.SAM

-50 -25 0 25 50 75 100 125 150

0.9

0.95

1

1.05

1.1

1.15

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE (V)

I = -250µA

D

BV , NORMALIZED

DSS

J-2.1-1.8-1.5-1.2-0.9-0.6-0.3

0.001

0.01

0.1

0.5

1

5

10

V , BODY DIODE FORWARD VOLTAGE (V)

-I , REVERSE DRAIN CURRENT (A)

T = -55°C

J

25°C

125°C

V = 0V

GS

SD

S

0.1 0.2 0.5 1 2 5 10 20 50

20

30

50

100

200

300

500

1000

-V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

DS

C

iss

f = 1 MHz

V = 0V

GS

C

oss

C

rss

D

S

-VDD

RL

VOUT

VGS DUT

VIN

RGEN G

10%

50%

90%

10%

90%

50%

VIN

VOUT

on off

d(off) f

r

d(on)

t t

tt

t

INVERTED

10%

PULSE WIDTH

Figure 7. Breakdown Voltage Variation with

Temperature. Figure 8. Body Diode Forward Voltage Variation

with Current and Temperature.

Figure 9. Capacitance Characteristics.

Figure 11. Switching Test Circui.t Figure 12. Switching Waveforms.

Typical Electrical Characteristics (continued)

0 5 10 15 20

0

2

4

6

8

10

Q , GATE CHARGE (nC)

-V , GATE-SOURCE VOLTAGE (V)

g

GS

I = -2.3A

DS V = -10V

DS

-20V

-30V

Figure 10. Gate Charge Characteristics.

NDS9948.SAM

Figure 13. Transconductance Variation with Drain

Current and Temperature. Figure 14. Maximum Safe Operating Area.

Typical Electrical Characteristics (continued)

0.1 0.2 0.5 1 2 5 10 60 100

0.01

0.05

0.1

0.5

1

2

5

10

20

- V , DRAIN-SOURCE VOLTAGE (V)

-I , DRAIN CURRENT (A)

D

RDS(ON) LIMIT

DS

DC

1ms

10ms

100ms

1s

100us

V = -10V

SINGLE PULSE

R = 100 C/W

T = 25°C

GS

A

θJA o

-10-8-6-4-20

0

2

4

6

I , DRAIN CURRENT (A)

g , TRANSCONDUCTANCE (SIEMENS)

T = -55°C

J

25°C

D

FS

V = -15V

DS

125°C

0.0001 0.001 0.01 0.1 1 10 100 300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t / t

12

R (t) = r(t) * R

R = See Note 1c

θJA

T - T = P * R (t)

θJA

A

J

P(pk)

t

1 t

2

Figure 15. Transient Thermal Response Curve.

Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change

depending on the circuit board design.