May 2002
2002 Fairc hild Semiconduct or Cor por ation NDS9948 Rev B(W)
NDS9948
Dual 60V P-Channel PowerTrench
MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applicat i ons requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
• Power managem ent
• Load switch
• Battery protection
Features
• –2.3 A, –60 V RDS(ON) = 250 mΩ @ V GS = –10 V
RDS(ON) = 500 m Ω @ V GS = –4.5 V
• Low gate charge (9nC typical )
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
D2 D2 D1 D1
S2G2S1G1
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source V ol tage –60 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current – Continuous (Note 1a) –2.3 A
– Pulsed –10
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1.0
PD
(Note 1c) 0.9
W
TJ, TSTG Operating and St orage Junction Temperature Range –55 to +175 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
(Note 1c) 135 °C/W
RθJC Thermal Resi stance, Junction-to-Case (Note 1) 40 °C/W
Package Marking and Ordering Information
Device Marki ng Device Reel Siz e Tape width Quantity
NDS9948 NDS9948 13’’ 12mm 2500 units
NDS9948
NDS9948 Rev B(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS Drain-Source A val anche Energy Si ngl e P ul se, VDD=–60 V 56 mJ
IAR Drain-Source Avalanche Current –2.3 A
Off Characteristics
BVDSS Drain–Sourc e Breakdown Voltage VGS = 0 V, ID = –250 µA –60 V
∆BVDSS
∆TJ Breakdown Voltage Temperature
Coefficient ID = –250 µA, Referenced to25°C
–52
mV/°C
IDSS
Zero Gate Volt age Drai n Current
VDS = –40 V, VGS = 0 V
VDS = –40 V,VGS = 0 V T J =–55°C
–2
–25 µA
IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold V ol t age VDS = VGS, ID = –250 µA –1 –1.5 –3 V
∆VGS(th)
∆TJ Gate Threshold Vol tage
Temperature Coefficient ID = –250 µA, Referenced to25°C
4
mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = –10 V, ID = –2.3 A
VGS = –4.5 V, ID = –1.6 A
VGS = –10 V,ID = –2.3A , T J =125°C
138
175
225
250
500
433
mΩ
ID(on) On–State Drai n Current VGS = –10 V, VDS = –5 V –10 A
gFS Forward Transconductance VDS = –10 V, ID = –2.3 A 5 S
Dynamic Characteristics
Ciss Input Capacitance 394 pF
Coss Output Capacitance 53 pF
Crss Reverse Transfer Capacitance
VDS = –30 V, V GS = 0 V,
f = 1.0 MHz 23 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 6 12 ns
tr Turn–On Rise Time 9 18 ns
td(off) Turn–Off Delay Time 16 29 ns
tf Turn–Off Fall Time
VDD = –30 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
3 6 ns
Qg Total Gate Charge 9 13 nC
Qgs Gate–Source Charge 1.4 nC
Qgd Gate–Drain Charge
VDS = –30 V, ID = –2.3 A,
VGS = –10 V
1.7 nC
NDS9948
NDS9948 Rev B(W)
Electrical Characteristics (cont.) TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Cont i nuous Drain–Source Diode Forward Current –1.7 A
VSD
Drain–Source Di ode Forward
Voltage VGS = 0 V, IS = –1.7 A(Note 2)
–0.8
–1.2
V
trr
Reverse Recovery T i me
VGS = 0 V, IF = –2.3A,
dIF/dt = 100A /µs 25
nS
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. `
a) 78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b) 125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
NDS9948
NDS9948 Rev B(W)
Typical Characteristics
0
2
4
6
8
10
0123456
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
VGS = -10V
-3.0V
-3.5V
-4.0V
-4.5V
-6.0V
0.8
1
1.2
1.4
1.6
1.8
0246810
-ID, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS=-3.5V
-4.0V
-6.0V
-10V
-4.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANC
E
ID = -2.3A
VGS = -10V
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
246810
-VGS, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
ID = -1A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation
withTemperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
6
11.522.533.54
-VGS, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
TA = -55oC25oC
125oC
VDS = -5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
-VSD, BODY DIOD E FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A)
VGS =0V
TA = 125oC
25oC
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
NDS9948
NDS9948 Rev B(W)
Typical Characteristics
0
2
4
6
8
10
0246810
Qg, GATE CHARG E (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
ID = -2.3
A
VDS = -20V -30V
-40V
0
100
200
300
400
500
600
0 102030405060
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
COSS
CRSS
f = 1 MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A
)
DC
1s
100ms
100
µ
RDS(ON) LIMIT
VGS = -10V
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
10ms
1ms
10s
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORM ALIZED EFFECTIVE TRANSIEN
T
THERMAL RESISTANCE
RθJA(t) = r(t) * RθJA
RθJA = 135oC/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P
(p
k
)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
NDS9948
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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