NDS9948 - ON SEMICONDUCTOR

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2010 Fairc hild Semiconductor Cor por ation NDS9948 Rev B1(W)

NDS9948

Dual 60V P-Channel PowerTrench



 MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applicat i ons requiring a wide range of gate drive voltage

ratings (4.5V – 20V).

Applications

• Power managem ent

• Load switch

• Battery protection

Features

• –2.3 A, –60 V RDS(ON) = 250 mΩ @ VGS = –10 V

RDS(ON) = 500 m Ω @ V GS = –4.5 V

• Low gate charge (9nC typical )

• Fast switching speed

• High performance trench t echnology for extremely

low RDS(ON)

• High power and current handling capability

SO-8

D2 D2 D1 D1

S2G2S1G1

Pin 1

SO-8

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source V ol tage –60 V

VGSS Gate-Source Voltage ±20 V

ID Drain Current – Continuous (Note 1a) –2.3 A

– Pulsed –10

Power Dissipation for Dual Operation 2

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1.0

(Note 1c) 0.9

TJ, TSTG Operating and St orage Junction Temperature Range –55 to +175 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

(Note 1c) 135 °C/W

RθJC Thermal Resi stance, J unction-to-Case (Note 1) 40 °C/W

Package Marking and Ordering Information

Device Marki ng Device Reel Siz e Tape width Quantity

NDS9948 NDS9948 13’’ 12mm 2500 units

NDS9948

January 2010

NDS9948 Rev B1(W)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 2)

WDSS Drain-Source A val anche Energy Singl e Pulse, VDD=–54 V 15 mJ

IAR Drain-Source Avalanche Current

Off Characteristics

BVDSS Drain–Sourc e Breakdown Voltage VGS = 0 V, ID = –250 µA –60 V

∆BVDSS

∆TJ Breakdown Voltage Temperature

Coefficient ID = –250 µA, Referenced to25°C

–52

mV/°C

IDSS

Zero Gate Volt age Drai n Current

VDS = –40 V, VGS = 0 V

VDS = –40 V,VGS = 0 V TJ =–55°C

–2

–25 µA

IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

On Characteristics (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.5 –3 V

∆VGS(th)

∆TJ Gate Threshold Vol tage

Temperature Coefficient ID = –250 µA, Referenced to25°C

mV/°C

RDS(on) Static Drain–Source

On–Resistance VGS = –10 V, ID = –2.3 A

VGS = –4.5 V, ID = –1.6 A

VGS = –10 V,ID = –2.3A , T J =125°C

138

175

225

250

500

433

mΩ

ID(on) On–State Drai n Current VGS = –10 V, VDS = –5 V –10 A

gFS Forward Transconductance VDS = –10 V, ID = –2.3 A 5 S

Dynamic Characteristics

Ciss Input Capacitance 394 pF

Coss Output Capacitance 53 pF

Crss Reverse Transfer Capacitance

VDS = –30 V, V GS = 0 V,

f = 1.0 MHz 23 pF

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time 6 12 ns

tr Turn–On Rise Time 9 18 ns

td(off) Turn–Off Delay Time 16 29 ns

tf Turn–Off Fall Time

VDD = –30 V, ID = –1 A,

VGS = –10 V, RGEN = 6 Ω

3 6 ns

Qg Total Gate Charge 9 13 nC

Qgs Gate–Source Charge 1.4 nC

Qgd Gate–Drain Charge

VDS = –30 V, ID = –2.3 A,

VGS = –10 V

1.7 nC

NDS9948

–10

NDS9948 Rev B1(W)

Electrical Characteristics (cont.) TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Cont i nuous Drain–Source Diode Forward Current –1. 7 A

VSD

Drain–Source Di ode Forward

Voltage VGS = 0 V, IS = –1.7 A(Note 2)

–0.8

–1.2

trr

Reverse Recovery T i me

VGS = 0 V, IF = –2.3A,

dIF/dt = 100A /µs 25

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the sol der mounting surface of

the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. `

a) 78°C/W when

mounted on a

0.5in2 pad of 2

oz copper

b) 125°C/W when

mounted on a

0.02 in2 pad of

2 oz copper

c) 135°C/W when

mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

NDS9948

NDS9948 Rev B1(W)

Typical Characteristics

0123456

-VDS, DRAIN TO SOURCE VOLTAGE (V)

-I

, DRAIN CURRENT (A)

VGS = -10V

-3.0V

-3.5V

-4.0V

-4.5V

-6.0V

0.8

1.2

1.4

1.6

1.8

0246810

-ID, DRAIN CURRENT (A)

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

VGS=-3.5V

-4.0V

-6.0V

-10V

-4.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.4

0.6

0.8

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (oC)

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

ID = -2.3A

VGS = -10V

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

246810

-VGS, GATE TO SOURCE VOLTAGE (V)

DS(ON)

, ON-RESISTANCE (OHM)

ID = -1A

TA = 125oC

TA = 25oC

Figure 3. On-Resistance Variation

withTemperature. Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

11.522.533.54

-VGS, GATE TO SOURCE VOLTAGE (V)

-I

, DRAIN CURRENT (A)

TA = -55oC25oC

125oC

VDS = -5V

0.0001

0.001

0.01

0.1

100

0 0.2 0.4 0.6 0.8 1 1.2

-VSD, BODY DIOD E FORWARD VOLTAGE (V)

-I

, REVERSE DRAIN CURRENT (A)

VGS =0V

TA = 125oC

25oC

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

NDS9948

NDS9948 Rev B1(W)

Typical Characteristics

0246810

Qg, GATE CHARGE (nC)

-V

, GATE-SOURCE VOLTAGE (V)

ID = -2.3AVDS = -20V -30V

-40V

100

200

300

400

500

600

0 102030405060

-VDS, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

CISS

COSS

CRSS

f = 1 MHz

VGS = 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.01

0.1

100

0.1 1 10 100

-VDS, DRAIN-SOURCE VOLTAGE (V)

-I

, DRAIN CURRENT (A)

100ms

100µ

RDS(ON) LIMIT

VGS = -10V

SINGLE PULSE

RθJA = 135oC/W

TA = 25oC

10ms

1ms

10s

0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

P(pk), PEAK TRANSIENT POWER (W)

SINGLE PULSE

RθJA = 135°C/W

TA = 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

r(t), NORM ALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

RθJA(t) = r(t) * RθJA

RθJA = 135oC/W

TJ - TA = P * RθJA(t)

Duty Cycle, D = t1 / t2

P(pk)

t1t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

NDS9948

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